BUZ901

BUZ901
Mfr. #:
BUZ901
Hersteller:
TT Electronics Power and Hybrid / Semelab Limited
Beschreibung:
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
BUZ901 Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Produkteigenschaft
Attributwert
Tags
BUZ901, BUZ90, BUZ9, BUZ
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ark
N Channel Mosfet, 200V, 8A, To-3
***nell
MOSFET, N, TO-3
***ment14 APAC
MOSFET, N, TO-3; Transistor Polarity:N Channel; Continuous Drain Current Id:8A; Drain Source Voltage Vds:200V; On Resistance Rds(on):1.5ohm; Rds(on) Test Voltage Vgs:-; Threshold Voltage Vgs:1.5V; Power Dissipation Pd:125W; Transistor Case Style:TO-3; No. of Pins:2Pins; Operating Temperature Max:150°C; Product Range:-; Automotive Qualification Standard:-; MSL:-; SVHC:No SVHC (15-Jan-2019); Current Id Max:8A; Current Temperature:25°C; Full Power Rating Temperature:25°C; No. of Transistors:1; Termination Type:Through Hole; Voltage Vds Typ:200V; Voltage Vgs Max:1.5V
Teil # Mfg. Beschreibung Aktie Preis
BUZ901D
DISTI # 96K7203
TT Electronics Power and Hybrid / Semelab LimitedN CHANNEL MOSFET, 200V, 16A, TO-3,Transistor Polarity:N Channel,Continuous Drain Current Id:16A,Drain Source Voltage Vds:200V,On Resistance Rds(on):0.75ohm,Rds(on) Test Voltage Vgs:-,Threshold Voltage Vgs:1.5V,Product Range:- RoHS Compliant: Yes0
    BUZ901P
    DISTI # 96K7204
    TT Electronics Power and Hybrid / Semelab LimitedN CHANNEL MOSFET, 200V, 8A, TO-247,Transistor Polarity:N Channel,Continuous Drain Current Id:8A,Drain Source Voltage Vds:200V,On Resistance Rds(on):1.5ohm,Rds(on) Test Voltage Vgs:-,Threshold Voltage Vgs:1.5V,No. of Pins:3PinsRoHS Compliant: Yes0
      BUZ901.
      DISTI # 290324
      TT Electronics Power and Hybrid / Semelab Limited 
      RoHS: Not Compliant
      0
      • 2500:$8.5200
      • 1000:$8.9500
      • 250:$9.2600
      • 500:$9.2600
      • 100:$9.7600
      • 25:$10.1300
      • 10:$11.1900
      • 1:$11.9300
      BUZ901P
      DISTI # 1208683
      TT Electronics Power and Hybrid / Semelab LimitedMOSFET, N, TO-247
      RoHS: Compliant
      0
      • 250:$13.8800
      • 500:$13.8800
      • 100:$14.6300
      • 25:$15.1800
      • 10:$16.7700
      • 1:$17.8800
      Bild Teil # Beschreibung
      BUZ102SLE3045A

      Mfr.#: BUZ102SLE3045A

      OMO.#: OMO-BUZ102SLE3045A-1190

      Power Field-Effect Transistor, 47A I(D), 55V, 0.024ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
      BUZ111SE3045

      Mfr.#: BUZ111SE3045

      OMO.#: OMO-BUZ111SE3045-1190

      Power Field-Effect Transistor, 80A I(D), 55V, 0.008ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
      BUZ111SL-E3045A

      Mfr.#: BUZ111SL-E3045A

      OMO.#: OMO-BUZ111SL-E3045A-1190

      Power Field-Effect Transistor, 80A I(D), 55V, 0.01ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
      BUZ304

      Mfr.#: BUZ304

      OMO.#: OMO-BUZ304-1190

      Neu und Original
      BUZ326

      Mfr.#: BUZ326

      OMO.#: OMO-BUZ326-1190

      Neu und Original
      BUZ42S

      Mfr.#: BUZ42S

      OMO.#: OMO-BUZ42S-1190

      Neu und Original
      BUZ63

      Mfr.#: BUZ63

      OMO.#: OMO-BUZ63-1190

      Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET
      BUZ742C

      Mfr.#: BUZ742C

      OMO.#: OMO-BUZ742C-1190

      Neu und Original
      BUZ76A

      Mfr.#: BUZ76A

      OMO.#: OMO-BUZ76A-1190

      Power Field-Effect Transistor, 2.6A I(D), 400V, 2.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
      BUZ77

      Mfr.#: BUZ77

      OMO.#: OMO-BUZ77-1190

      Neu und Original
      Verfügbarkeit
      Aktie:
      Available
      Auf Bestellung:
      4000
      Menge eingeben:
      Der aktuelle Preis von BUZ901 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
      Referenzpreis (USD)
      Menge
      Stückpreis
      ext. Preis
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      100
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      500
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      1000
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      Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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