CGHV40200PP

CGHV40200PP
Mfr. #:
CGHV40200PP
Hersteller:
N/A
Beschreibung:
RF JFET Transistors GaN HEMT DC-2.5GHz, 180 Watt
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
CGHV40200PP Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Mehr Informationen:
CGHV40200PP Mehr Informationen
Produkteigenschaft
Attributwert
Hersteller:
Qorvo
Produktkategorie:
HF-JFET-Transistoren
RoHS:
Y
Transistortyp:
HEMT
Technologie:
GaN SiC
Gewinnen:
19 dB
Polarität des Transistors:
N-Kanal
Vds - Drain-Source-Durchbruchspannung:
28 V
Vgs - Gate-Source-Durchbruchspannung:
100 V
Id - Kontinuierlicher Drainstrom:
817 mA
Ausgangsleistung:
24 W
Minimale Betriebstemperatur:
- 40 C
Maximale Betriebstemperatur:
+ 85 C
Pd - Verlustleistung:
28.8 W
Montageart:
SMD/SMT
Paket / Koffer:
QFN-8
Verpackung:
Tablett
Aufbau:
Single
Arbeitsfrequenz:
30 MHz to 1.215 GHz
Betriebstemperaturbereich:
- 40 C to + 85 C
Serie:
QPD
Marke:
Qorvo
Entwicklungs-Kit:
QPD1000PCB401, QPD1000PCB402
Feuchtigkeitsempfindlich:
ja
Produktart:
HF-JFET-Transistoren
Werkspackungsmenge:
100
Unterkategorie:
Transistoren
Vgs th - Gate-Source-Schwellenspannung:
- 2.8 V
Teil # Aliase:
1131140
Tags
CGHV4, CGHV, CGH
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
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Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
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***i-Key
RF MOSFET HEMT 440199
CGHV40200PP GaN HEMT
Wolfspeed/Cree CGHV40200PP GaN High Electron Mobility Transistor (HEMT) operates from a 50V rail and offers a broadband solution to RF and microwave applications. The Gan HEMT provide high efficiency, high gain, and wide bandwidth capabilities. These features make CGHV40200PP ideal for linear and compressed amplifier circuits. CGHV40200PP GaN HEMT is available in 4-lead flange package. Typical applications include 2-way radio, broadband amplifiers, radar amplifiers, and test instrumentation.Learn more
Teil # Mfg. Beschreibung Aktie Preis
CGHV40200PP
DISTI # V36:1790_22799872
Cree, Inc.RF POWER TRANSISTOR0
    CGHV40200PP
    DISTI # CGHV40200PP-ND
    WolfspeedRF MOSFET HEMT 440199
    RoHS: Not compliant
    Min Qty: 1
    Container: Tray
    148In Stock
    • 1:$336.3600
    CGHV40200PP-TB
    DISTI # CGHV40200PP-TB-ND
    WolfspeedDEV KIT
    RoHS: Not compliant
    Min Qty: 1
    Container: Bulk
    1In Stock
    • 1:$550.0000
    CGHV40200PP
    DISTI # 941-CGHV40200PP
    Cree, Inc.RF JFET Transistors GaN HEMT DC-2.5GHz, 180 Watt
    RoHS: Compliant
    80
    • 1:$377.3800
    CGHV40200PP-TB
    DISTI # 941-CGHV40200PPTB
    Cree, Inc.RF Development Tools Test Board for CGHV50200PP
    RoHS: Compliant
    2
    • 1:$632.5000
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    Verfügbarkeit
    Aktie:
    80
    Auf Bestellung:
    2063
    Menge eingeben:
    Der aktuelle Preis von CGHV40200PP dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
    Referenzpreis (USD)
    Menge
    Stückpreis
    ext. Preis
    1
    377,38 $
    377,38 $
    Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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