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MMRF5017HSR5

MMRF5017HSR5
Mfr. #:
MMRF5017HSR5
Hersteller:
NXP Semiconductors
Beschreibung:
RF MOSFET Transistors 50V GaN on Sic 90W CW 3MHz-1GHz
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
MMRF5017HSR5 Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
MMRF5017HSR5 DatasheetMMRF5017HSR5 Datasheet (P4-P6)MMRF5017HSR5 Datasheet (P7-P9)MMRF5017HSR5 Datasheet (P10)
ECAD Model:
Mehr Informationen:
MMRF5017HSR5 Mehr Informationen MMRF5017HSR5 Product Details
Produkteigenschaft
Attributwert
Hersteller:
NXP
Produktkategorie:
HF-MOSFET-Transistoren
RoHS:
Y
Polarität des Transistors:
N-Kanal
Technologie:
GaN SiC
Id - Kontinuierlicher Drainstrom:
200 mA
Vds - Drain-Source-Durchbruchspannung:
125 V
Ausgangsleistung:
125 W
Minimale Betriebstemperatur:
- 55 C
Maximale Betriebstemperatur:
+ 150 C
Montageart:
SMD/SMT
Paket / Koffer:
NI-400S-2
Verpackung:
Spule
Arbeitsfrequenz:
30 MHz to 2200 MHz
Serie:
MMRF5017HS
Typ:
HF-Leistungs-MOSFET
Marke:
NXP Semiconductors
Anzahl der Kanäle:
1 Channel
Pd - Verlustleistung:
154 W
Produktart:
HF-MOSFET-Transistoren
Werkspackungsmenge:
50
Unterkategorie:
MOSFETs
Vgs - Gate-Source-Spannung:
- 8 V
Vgs th - Gate-Source-Schwellenspannung:
- 2.3 V
Teil # Aliase:
935360891138
Tags
MMRF5017, MMRF50, MMRF5, MMRF, MMR
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ark
Wideband Rf Power Gan Transistor, 30-2200 Mhz, 125 W Cw, 50 V Rohs Compliant: Yes
***W
RF Power Transistor, 0.03 to 2.2 GHz, 125 W CW, 50 V, SOT1828-1, GaN
***et
RF Power GaN Transistor 30MHz to 2200MHz 125W 2-Pin NI-400S-2S
***ow.cn
Trans RF MOSFET 125V 3-Pin CFMF T/R
MMRF5017HS 125W 50V GaN RF Power Transistor
NXP Semiconductors MMRF5017HS 125W 50V GaN RF Power Transistor offers Broadband operation from  30MHz to 2200MHz, and includes input matching for extended bandwidth performance. With its high gain and high ruggedness, the MMRF5017HS is ideally suited for CW (Continuous Wave), Pulse, and Broadband RF applications.
RF Power GaN Portfolio
NXP Semiconductors RF Power Gallium Nitride (GaN) Portfolio provides state of the art linearizability and RF performance that enables 5G deployment. These transistors offer solutions for cellular infrastructure, defense, and industrial markets. The GaN transistors provide wideband performance and high-frequency operation. These transistors feature end-to-end applications, solution support, and high-volume production. The GaN transistors come with advanced GaN on SiC technology that offers high power density. These transistors are designed for cellular base station applications.
Teil # Mfg. Beschreibung Aktie Preis
MMRF5017HSR5
DISTI # V99:2348_18969828		NXP SemiconductorsGaN 2.2GHz 250W NI400S4S49
  • 50:$227.8200
  • 25:$228.2100
  • 10:$232.2400
  • 5:$237.0200
  • 1:$238.5600
MMRF5017HSR5
DISTI # V36:1790_18969828		NXP SemiconductorsGaN 2.2GHz 250W NI400S4S0
    MMRF5017HSR5
    DISTI # 568-13864-ND    		NXP SemiconductorsGAN 2.2GHZ 250W NI400S4S
    RoHS: Compliant
    Min Qty: 1
    Container: Tray    		50In Stock
    • 10:$228.7960
    • 1:$238.8900
    MMRF5017HSR5
    DISTI # 27009661    		NXP SemiconductorsGaN 2.2GHz 250W NI400S4S49
    • 50:$244.9065
    • 25:$245.3257
    • 10:$249.6580
    • 5:$254.7965
    • 1:$256.4520
    MMRF5017HSR5
    DISTI # MMRF5017HSR5    		Avnet, Inc.GaN 2.2GHz 250W NI400S4S (Alt: MMRF5017HSR5)
    RoHS: Compliant
    Min Qty: 50    		Europe - 0
    • 500:€207.4900
    • 300:€212.7900
    • 200:€219.8900
    • 100:€226.8900
    • 50:€231.0900
    MMRF5017HSR5
    DISTI # MMRF5017HSR5    		Avnet, Inc.GaN 2.2GHz 250W NI400S4S - Tape and Reel (Alt: MMRF5017HSR5)
    RoHS: Compliant
    Min Qty: 50
    Container: Reel    		Americas - 0
    • 500:$213.9900
    • 300:$218.0900
    • 200:$226.3900
    • 100:$235.5900
    • 50:$245.1900
    MMRF5017HSR5138
    DISTI # MMRF5017HSR5138    		Avnet, Inc.RF Power GaN Transistor N-Channel 125V 30MHz to 2200MHz 2-Pin NI-400S T/R - Bulk (Alt: MMRF5017HSR5138)
    Min Qty: 1
    Container: Bulk    		Americas - 0
      MMRF5017HSR5
      DISTI # 44AC0468      		NXP SemiconductorsWIDEBAND RF POWER GAN TRANSISTOR, 30-2200 MHZ, 125 W CW, 50 V REEL0
      • 25:$210.2900
      • 10:$223.7500
      • 5:$227.1200
      • 1:$230.4800
      MMRF5017HSR5.
      DISTI # 96AC1006      		NXP SemiconductorsWIDEBAND RF POWER GAN TRANSISTOR, 30-2200 MHZ, 125 W CW, 50 V ROHS COMPLIANT: YES0
      • 500:$213.9900
      • 300:$218.0900
      • 200:$226.3900
      • 100:$235.5900
      • 1:$245.1900
      MMRF5017HSR5
      DISTI # 771-MMRF5017HR5      		NXP SemiconductorsRF MOSFET Transistors 50V GaN on Sic 90W CW 3MHz-1GHz
      RoHS: Compliant      		45
      • 1:$246.0700
      • 5:$240.5800
      • 10:$235.6600
      • 25:$232.1800
      • 50:$223.7500
      MMRF5017HSR5NXP SemiconductorsRF Power Field-Effect Transistor
      RoHS: Compliant      		50
      • 1000:$221.3600
      • 500:$233.0100
      • 100:$242.5800
      • 25:$252.9800
      • 1:$272.4400
      Bild Teil # Beschreibung
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      OMO.#: OMO-T2G6001528-SG

      		 RF JFET Transistors DC-6.0GHz 15 Watt 28V GaN
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      OMO.#: OMO-NPT2021

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      Mfr.#: NPTB00004A

      OMO.#: OMO-NPTB00004A

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      OMO.#: OMO-MABC-001000-DP000L-1190

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      MAGX-011086

      Mfr.#: MAGX-011086

      OMO.#: OMO-MAGX-011086-MACOM

      		 IC RF AMP 0HZ-6GHZ 24QFN
      T2G6001528-SG

      Mfr.#: T2G6001528-SG

      OMO.#: OMO-T2G6001528-SG-318

      		 RF JFET Transistors DC-6.0GHz 15 Watt 28V GaN
      CGHV40200PP

      Mfr.#: CGHV40200PP

      OMO.#: OMO-CGHV40200PP-WOLFSPEED

      		 RF MOSFET HEMT 440199
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      Mfr.#: CGHV1F006S

      OMO.#: OMO-CGHV1F006S-WOLFSPEED

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      Verfügbarkeit
      Aktie:
      45
      Auf Bestellung:
      2028
      Menge eingeben:
      Der aktuelle Preis von MMRF5017HSR5 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
      Referenzpreis (USD)
      Menge
      Stückpreis
      ext. Preis
      1
      246,07 $
      246,07 $
      5
      240,58 $
      1 202,90 $
      10
      235,66 $
      2 356,60 $
      25
      232,18 $
      5 804,50 $
      Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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