PD55035S-E

PD55035S-E
Mfr. #:
PD55035S-E
Hersteller:
STMicroelectronics
Beschreibung:
RF MOSFET Transistors POWER RF Transistor
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
PD55035S-E Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
PD55035S-E DatasheetPD55035S-E Datasheet (P4-P6)PD55035S-E Datasheet (P7-P9)PD55035S-E Datasheet (P10-P12)PD55035S-E Datasheet (P13-P15)PD55035S-E Datasheet (P16-P18)PD55035S-E Datasheet (P19-P21)PD55035S-E Datasheet (P22)
ECAD Model:
Mehr Informationen:
PD55035S-E Mehr Informationen PD55035S-E Product Details
Produkteigenschaft
Attributwert
Hersteller:
STMicroelectronics
Produktkategorie:
HF-MOSFET-Transistoren
RoHS:
Y
Polarität des Transistors:
N-Kanal
Technologie:
Si
Id - Kontinuierlicher Drainstrom:
7 A
Vds - Drain-Source-Durchbruchspannung:
40 V
Gewinnen:
16.9 dB
Ausgangsleistung:
35 W
Minimale Betriebstemperatur:
- 65 C
Maximale Betriebstemperatur:
+ 150 C
Montageart:
SMD/SMT
Paket / Koffer:
PowerSO-10RF-Straight-4
Verpackung:
Rohr
Aufbau:
Single
Höhe:
3.5 mm
Länge:
7.5 mm
Arbeitsfrequenz:
1 GHz
Serie:
PD55035-E
Typ:
HF-Leistungs-MOSFET
Breite:
9.4 mm
Marke:
STMicroelectronics
Vorwärtstranskonduktanz - Min:
2.5 S
Kanalmodus:
Erweiterung
Feuchtigkeitsempfindlich:
ja
Pd - Verlustleistung:
95 W
Produktart:
HF-MOSFET-Transistoren
Werkspackungsmenge:
400
Unterkategorie:
MOSFETs
Vgs - Gate-Source-Spannung:
20 V
Gewichtseinheit:
0.105822 oz
Tags
PD55035S, PD5503, PD550, PD55, PD5
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
    D***v
    D***v
    RU

    The order was received. only long went, but it is not the fault of the seller and the russian post. thanks to the seller, the goods are normal, and the equipment and in work.

    2019-01-22
    A***n
    A***n
    RU

    Came in 20 days, the plug is very tight

    2019-01-27
    E**x
    E**x
    RU

    Fast delivery, sociable seller, all as in the description!

    2019-03-31
    L***A
    L***A
    RU

    The quality of the goods from this seller as always on top

    2019-02-08
***ical
Trans RF MOSFET N-CH 40V 7A 3-Pin PowerSO-10RF (Straight lead)
***ser
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***ponent Stockers USA
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***emi
P-Channel PowerTrench® MOSFET, -40V, -23A, 27mΩ
***ure Electronics
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*** Stop Electro
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***rchild Semiconductor
This P-Channel MOSFET has been produced using Fairchild Semiconductor's proprietary PowerTrench® technology to deliver low rDS(on) and good switching characteristic offering superior performance in application.
***ical
Trans RF MOSFET N-CH 40V 8A 3-Pin(2+Tab) PowerSO-10RF (Formed lead) Tube
*** Source Electronics
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***th Star Micro
Transistor MOSFET N-CH 40V 7A 4-Pin (2+2Tab) PowerSO-10RF (Formed lead) Tube
***icroelectronics
35W 12.5V 500MHz LDMOS in PowerSO-10RF plastic package
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***icroelectronics SCT
RF power transistor, LdmoST plastic family N-channel enhancement-mode lateral MOSFETs
***ical
Trans RF MOSFET N-CH 40V 8A 3-Pin PowerSO-10RF (Straight lead) Tube
***icroelectronics
35W 13.6V 870MHz LDMOS in PowerSO-10RF plastic package
***r Electronics
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*** Electronic Components
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Si4447ADY Series 40 V 7.2 A 45 mOhm Surface Mount P-Channel Mosfet - SOIC-8
***roFlash
Small Signal Field-Effect Transistor, 7.2A I(D), 40V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA
***nell
MOSFET, P CH, W/D, 40V, 7.2A, SO8; Transistor Polarity:P Channel; Continuous Drain Current Id:-7.2A; Drain Source Voltage Vds:-40V; On Resistance Rds(on):0.036ohm; Rds(on) Test Voltage Vgs:-10V; Power Dissipation Pd:4.2W; Operating Temperature Min:-55°C; Operating Temperature Max:150°C; Transistor Case Style:SOIC; No. of Pins:8; MSL:MSL 1 - Unlimited; Operating Temperature Range:-55°C to +150°C
***(Formerly Allied Electronics)
SI4909DY-T1-GE3 Dual P-channel MOSFET Transistor; 6.5 A; 40 V; 8-Pin SOIC
***et Europe
Transistor MOSFET Array Dual P-CH 40V 8A 8-Pin SOIC T/R
***enic
40V 8A 27m´Î@10V8A 3.2W 2.5V@250Ã×A 2 P-Channel SOIC-8_150mil MOSFETs ROHS
***roFlash
Small Signal Field-Effect Transistor, 8A I(D), 40V, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA
***ment14 APAC
MOSFET, PP CH, W/D DIOD, 40V, 8A,SO8; Transistor Polarity:P Channel; Continuous Drain Current Id:-8A; Drain Source Voltage Vds:-40V; On Resistance Rds(on):0.021ohm; Rds(on) Test Voltage Vgs:-10V; Power Dissipation Pd:3.2W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:SOIC; No. of Pins:8; Continuous Drain Current Id, P Channel:-8A; Drain Source Voltage Vds, P Channel:-40V; Module Configuration:Dual; On Resistance Rds(on), P Channel:0.021ohm; Power Dissipation Pd:3.2W
Teil # Mfg. Beschreibung Aktie Preis
PD55035S-E
DISTI # 27143827
STMicroelectronicsTrans RF MOSFET N-CH 40V 7A 3-Pin PowerSO-10RF (Straight lead)
RoHS: Compliant
250
  • 100:$20.3832
  • 50:$21.5822
PD55035S-E
DISTI # 497-5303-5-ND
STMicroelectronicsFET RF 40V 500MHZ PWRSO10
RoHS: Compliant
Min Qty: 400
Container: Tube
Temporarily Out of Stock
  • 400:$24.8530
PD55035S-E
DISTI # PD55035S-E
STMicroelectronicsTrans MOSFET N-CH 40V 7A 4-Pin(2+2Tab) PowerSO-10RF (Straight lead) - Bag (Alt: PD55035S-E)
RoHS: Compliant
Min Qty: 400
Container: Bag
Americas - 0
  • 400:$25.5900
  • 800:$24.3900
  • 1600:$23.2900
  • 2400:$22.2900
  • 4000:$21.7900
PD55035S-E
DISTI # 511-PD55035S-E
STMicroelectronicsRF MOSFET Transistors POWER RF Transistor
RoHS: Compliant
0
    PD55035STR-E
    DISTI # 511-PD55035STR-E
    STMicroelectronicsRF MOSFET Transistors POWER R.F.
    RoHS: Compliant
    0
      Bild Teil # Beschreibung
      PD55008S-E

      Mfr.#: PD55008S-E

      OMO.#: OMO-PD55008S-E

      RF MOSFET Transistors POWER R.F.
      PD55015S-E

      Mfr.#: PD55015S-E

      OMO.#: OMO-PD55015S-E

      RF MOSFET Transistors POWER RF Transistor
      PD55008-E

      Mfr.#: PD55008-E

      OMO.#: OMO-PD55008-E

      RF MOSFET Transistors RF POWER TRANS
      PD55003STR-E

      Mfr.#: PD55003STR-E

      OMO.#: OMO-PD55003STR-E

      RF MOSFET Transistors POWER R.F.
      PD55003

      Mfr.#: PD55003

      OMO.#: OMO-PD55003-STMICROELECTRONICS

      FET RF 40V 500MHZ PWRSO-10
      PD55003S

      Mfr.#: PD55003S

      OMO.#: OMO-PD55003S-STMICROELECTRONICS

      FET RF 40V 500MHZ PWRSO-10
      PD55015

      Mfr.#: PD55015

      OMO.#: OMO-PD55015-1152

      RF MOSFET Transistors N-Ch 40 Volt 5 Amp
      PD55035E

      Mfr.#: PD55035E

      OMO.#: OMO-PD55035E-1190

      Neu und Original
      PD55035STR-E

      Mfr.#: PD55035STR-E

      OMO.#: OMO-PD55035STR-E-STMICROELECTRONICS

      FET RF 40V 500MHZ PWRSO-10
      PD55008S-E

      Mfr.#: PD55008S-E

      OMO.#: OMO-PD55008S-E-STMICROELECTRONICS

      FET RF 40V 500MHZ PWRSO10
      Verfügbarkeit
      Aktie:
      Available
      Auf Bestellung:
      5000
      Menge eingeben:
      Der aktuelle Preis von PD55035S-E dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
      Referenzpreis (USD)
      Menge
      Stückpreis
      ext. Preis
      1
      33,08 $
      33,08 $
      5
      32,74 $
      163,70 $
      10
      30,51 $
      305,10 $
      25
      29,14 $
      728,50 $
      100
      26,06 $
      2 606,00 $
      250
      24,86 $
      6 215,00 $
      500
      23,66 $
      11 830,00 $
      Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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