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IPB60R299CPATMA1

IPB60R299CPATMA1
Mfr. #:
IPB60R299CPATMA1
Hersteller:
Infineon Technologies
Beschreibung:
MOSFET N-Ch 600V 11A D2PAK-2 CoolMOS CP
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
IPB60R299CPATMA1 Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Produkteigenschaft
Attributwert
Hersteller:
Infineon
Produktkategorie:
MOSFET
RoHS:
Y
Technologie:
Si
Montageart:
SMD/SMT
Paket / Koffer:
TO-263-3
Anzahl der Kanäle:
1 Channel
Polarität des Transistors:
N-Kanal
Vds - Drain-Source-Durchbruchspannung:
600 V
Id - Kontinuierlicher Drainstrom:
11 A
Rds On - Drain-Source-Widerstand:
270 mOhms
Vgs th - Gate-Source-Schwellenspannung:
2.5 V
Vgs - Gate-Source-Spannung:
20 V
Qg - Gate-Ladung:
29 nC
Minimale Betriebstemperatur:
- 40 C
Maximale Betriebstemperatur:
+ 150 C
Pd - Verlustleistung:
96 W
Aufbau:
Single
Kanalmodus:
Erweiterung
Handelsname:
CoolMOS
Verpackung:
Spule
Höhe:
4.4 mm
Länge:
10 mm
Serie:
CoolMOS CE
Transistortyp:
1 N-Channel
Breite:
9.25 mm
Marke:
Infineon-Technologien
Abfallzeit:
5 ns
Produktart:
MOSFET
Anstiegszeit:
5 ns
Werkspackungsmenge:
1000
Unterkategorie:
MOSFETs
Typische Ausschaltverzögerungszeit:
40 ns
Typische Einschaltverzögerungszeit:
10 ns
Teil # Aliase:
IPB60R299CP IPB6R299CPXT SP000301161
Gewichtseinheit:
0.139332 oz
Tags
IPB60R299CPA, IPB60R29, IPB60R2, IPB60R, IPB60, IPB6, IPB
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ical
TransMOSFETNCH600V11AAutomotive3Pin2TabD2PAKTR
***ineon
CoolMOSCPInfineonsfifthseriesofCoolMOSisdesignedforhardandsoftswitchingtopologiesCCMPFCaswellasPWMforATXnotebookadapterPDPandLCDTVSummaryofFeaturesLowestfigureofmeritRonxQg;Ultralowgatecharge;Extremedvdtrate;UltralowRDSonultralowgatechargeveryfastswitching;Vth3VgfsveryhighinternalRgverylow;Highcurrentcapability;Significantreductionofconductionandswitchinglosses;Highpowerdensityandefficiencyforsuperiorpowerconversionsystems;BestinclasspriceperformanceratioTargetApplicationsSolar;Server;Telecom;Consumer;Adapter;PCpower
***ment14APAC
MOSFETNTO263;TransistorPolarityNChannel;ContinuousDrainCurrentId11A;DrainSourceVoltageVds650V;OnResistanceRdson299mohm;RdsonTestVoltageVgs10V;ThresholdVoltageVgsTyp3V;PowerDissipationPd96W;OperatingTemperatureRange55Cto150C;TransistorCaseStyleTO263;NoofPins3;SVHCNoSVHC19Dec2011;CurrentIdMax11A;PackageCaseTO263;PowerDissipationPd96W;TerminationTypeSMD;TransistorTypePowerMOSFET;VoltageVdsTyp650V;VoltageVgsMax20V;VoltageVgsRdsonMeasurement10V
Teil # Mfg. Beschreibung Aktie Preis
IPB60R299CPATMA1
DISTI # V72:2272_06378240		Infineon Technologies AGTrans MOSFET N-CH 600V 11A Automotive 3-Pin(2+Tab) D2PAK T/R
RoHS: Compliant		270
  • 75000:$1.2870
  • 30000:$1.2900
  • 15000:$1.2930
  • 6000:$1.2950
  • 3000:$1.2980
  • 1000:$1.3000
  • 500:$1.5750
  • 250:$1.8170
  • 100:$1.8360
  • 50:$2.3140
  • 25:$2.3380
  • 10:$2.3609
  • 1:$3.0865
IPB60R299CPATMA1
DISTI # IPB60R299CPATMA1TR-ND		Infineon Technologies AGMOSFET N-CH 600V 11A TO-263
RoHS: Compliant
Min Qty: 1000
Container: Tape & Reel (TR)		Limited Supply - Call
    IPB60R299CPATMA1
    DISTI # IPB60R299CPATMA1CT-ND    		Infineon Technologies AGMOSFET N-CH 600V 11A TO-263
    RoHS: Compliant
    Min Qty: 1
    Container: Cut Tape (CT)    		Limited Supply - Call
      IPB60R299CPATMA1
      DISTI # IPB60R299CPATMA1DKR-ND      		Infineon Technologies AGMOSFET N-CH 600V 11A TO-263
      RoHS: Compliant
      Min Qty: 1
      Container: Digi-Reel®      		Limited Supply - Call
        IPB60R299CPATMA1
        DISTI # 26194980        		Infineon Technologies AGTrans MOSFET N-CH 600V 11A Automotive 3-Pin(2+Tab) D2PAK T/R
        RoHS: Compliant        		270
        • 5:$3.0865
        IPB60R299CPATMA1
        DISTI # IPB60R299CPATMA1        		Infineon Technologies AG- Bulk (Alt: IPB60R299CPATMA1)
        Min Qty: 285
        Container: Bulk        		Americas - 0
        • 855:$1.0900
        • 1425:$1.0900
        • 2850:$1.0900
        • 285:$1.1900
        • 570:$1.1900
        IPB60R299CPATMA1
        DISTI # 726-IPB60R299CPATMA1        		Infineon Technologies AGMOSFET N-Ch 600V 11A D2PAK-2 CoolMOS CP
        RoHS: Compliant        		638
        • 1:$2.8200
        • 10:$2.3900
        • 100:$1.9100
        • 500:$1.6700
        • 1000:$1.3900
        • 2000:$1.2900
        • 5000:$1.2400
        IPB60R299CP
        DISTI # 726-IPB60R299CP        		Infineon Technologies AGMOSFET N-Ch 600V 11A D2PAK-2 CoolMOS CP
        RoHS: Compliant        		19
        • 1:$2.8200
        • 10:$2.3900
        • 100:$1.9100
        • 500:$1.6700
        • 1000:$1.3900
        • 2000:$1.2900
        • 5000:$1.2400
        IPB60R299CPATMA1Infineon Technologies AGPower Field-Effect Transistor, 11A I(D), 600V, 0.299ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
        RoHS: Compliant        		4790
        • 1000:$1.1600
        • 500:$1.2200
        • 100:$1.2700
        • 25:$1.3200
        • 1:$1.4300
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        OMO.#: OMO-FMMT458QTA-DIODES

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        Verfügbarkeit
        Aktie:
        488
        Auf Bestellung:
        2471
        Menge eingeben:
        Der aktuelle Preis von IPB60R299CPATMA1 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
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