PartNumber | IPB60R210CFD7ATMA1 | IPB60R250CPATMA1 | IPB60R230P6ATMA1 |
Description | MOSFET | MOSFET N-Ch 600V 12A D2PAK-2 CoolMOS CP | MOSFET N-CH 600V 16.8A 3TO263 |
Manufacturer | Infineon | Infineon | - |
Product Category | MOSFET | MOSFET | - |
RoHS | Y | Y | - |
Packaging | Reel | Reel | - |
Brand | Infineon Technologies | Infineon Technologies | - |
Product Type | MOSFET | MOSFET | - |
Factory Pack Quantity | 1000 | 1000 | - |
Subcategory | MOSFETs | MOSFETs | - |
Part # Aliases | IPB60R210CFD7 SP002621142 | IPB60R250CP IPB60R250CPXT SP000358140 | - |
Technology | - | Si | - |
Mounting Style | - | SMD/SMT | - |
Package / Case | - | TO-263-3 | - |
Number of Channels | - | 1 Channel | - |
Transistor Polarity | - | N-Channel | - |
Vds Drain Source Breakdown Voltage | - | 600 V | - |
Id Continuous Drain Current | - | 12 A | - |
Rds On Drain Source Resistance | - | 220 mOhms | - |
Vgs th Gate Source Threshold Voltage | - | 2.5 V | - |
Vgs Gate Source Voltage | - | 20 V | - |
Qg Gate Charge | - | 35 nC | - |
Minimum Operating Temperature | - | - 55 C | - |
Maximum Operating Temperature | - | + 150 C | - |
Pd Power Dissipation | - | 104 W | - |
Configuration | - | Single | - |
Channel Mode | - | Enhancement | - |
Tradename | - | CoolMOS | - |
Height | - | 4.4 mm | - |
Length | - | 10 mm | - |
Series | - | XPB60R250 | - |
Transistor Type | - | 1 N-Channel | - |
Width | - | 9.25 mm | - |
Fall Time | - | 12 ns | - |
Rise Time | - | 17 ns | - |
Typical Turn Off Delay Time | - | 110 ns | - |
Typical Turn On Delay Time | - | 40 ns | - |
Unit Weight | - | 0.139332 oz | - |