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IPB60R250CP

IPB60R250CP
Mfr. #:
IPB60R250CP
Hersteller:
Rochester Electronics, LLC
Beschreibung:
Darlington Transistors MOSFET N-Ch 600V 12A D2PAK-2 CoolMOS CP
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
IPB60R250CP Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Produkteigenschaft
Attributwert
Hersteller
INFINEON
Produktkategorie
FETs - Einzeln
Serie
CoolMOS CP
Verpackung
Spule
Teil-Aliasnamen
IPB60R250CPATMA1 IPB60R250CPXT SP000358140
Gewichtseinheit
0.139332 oz
Montageart
SMD/SMT
Handelsname
CoolMOS
Paket-Koffer
TO-252-3
Technologie
Si
Anzahl der Kanäle
1 Channel
Aufbau
Single
Transistor-Typ
1 N-Channel
Pd-Verlustleistung
104 W
Maximale-Betriebstemperatur
+ 150 C
Mindest-Betriebstemperatur
- 55 C
Abfallzeit
12 ns
Anstiegszeit
17 ns
Vgs-Gate-Source-Spannung
20 V
ID-Dauer-Drain-Strom
12 A
Vds-Drain-Source-Breakdown-Voltage
600 V
Rds-On-Drain-Source-Widerstand
250 mOhms
Transistor-Polarität
N-Kanal
Typische-Ausschaltverzögerungszeit
110 ns
Typische-Einschaltverzögerungszeit
40 ns
Kanal-Modus
Erweiterung
Tags
IPB60R2, IPB60R, IPB60, IPB6, IPB
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ical
Trans MOSFET N-CH 600V 12A 3-Pin(2+Tab) D2PAK T/R
***et
Trans MOSFET N-CH 600V 12A 3-Pin(2+Tab) TO-263
***et Europe
Trans MOSFET N-CH 600V 12A 3-Pin TO-263 T/R
***o-Tech
MOSFET N-Channel 600V 12A CoolMOS3 TO263
***i-Key
MOSFET N-CH 650V 12A TO263-3
***ark
MOSFET, N, TO-263; Transistor Type:Power MOSFET; Transistor Polarity:N Channel; Typ Voltage Vds:650V; Current, Id Cont:12A; On State Resistance:0.25ohm; Voltage Vgs Rds on Measurement:10V; Typ Voltage Vgs th:3V; Case Style:TO-263; ;RoHS Compliant: Yes
***nell
MOSFET, N, TO-263; Transistor Type:Power MOSFET; Transistor Polarity:N Channel; Voltage, Vds Typ:650V; Current, Id Cont:12A; On State Resistance:0.25ohm; Voltage, Vgs Rds on Measurement:10V; Voltage, Vgs th Typ:3V; Case Style:TO-263; Termination Type:SMD; Operating Temperature Range:-55°C to +150°C; SVHC:Cobalt dichloride
***ineon
CoolMOS CP, Infineon's fifth series of CoolMOS, is designed for hard and soft switching topologies, CCM PFC as well as PWM for ATX, notebook adapter PDP and LCD TV. | Summary of Features: Lowest figure of merit R on x Q g; Ultra low gate charge; Extreme dv/dt rate; Ultra low R DS(on), ultra low gate charge, very fast switching; V th 3 V, g fs very high, internal R g very low; High current capability; Significant reduction of conduction and switching losses; High power density and efficiency for superior power conversion systems; Best-in-class price/performance ratio | Target Applications: Solar; Server; Telecom; Consumer; Adapter; PC power
Teil # Mfg. Beschreibung Aktie Preis
IPB60R250CPATMA1
DISTI # IPB60R250CPATMA1TR-ND		Infineon Technologies AGMOSFET N-CH 650V 12A TO263-3
RoHS: Compliant
Min Qty: 1000
Container: Tape & Reel (TR)		Limited Supply - Call
    IPB60R250CP
    DISTI # IPB60R250CP    		Infineon Technologies AGTrans MOSFET N-CH 600V 12A 3-Pin TO-263 T/R (Alt: IPB60R250CP)
    RoHS: Compliant
    Min Qty: 1000
    Container: Tape and Reel    		Asia - 1000
      IPB60R250CP
      DISTI # SP000358140      		Infineon Technologies AGTrans MOSFET N-CH 600V 12A 3-Pin TO-263 T/R (Alt: SP000358140)
      RoHS: Compliant
      Min Qty: 1000
      Container: Tape and Reel      		Europe - 0
      • 1000:€1.9900
      • 2000:€1.4900
      • 4000:€1.3900
      • 6000:€1.3900
      • 10000:€1.2900
      IPB60R250CPInfineon Technologies AGPower Field-Effect Transistor, 12A I(D), 600V, 0.25ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
      RoHS: Compliant      		44770
      • 1000:$1.6800
      • 500:$1.7700
      • 100:$1.8400
      • 25:$1.9200
      • 1:$2.0600
      IPB60R250CPATMA1Infineon Technologies AGPower Field-Effect Transistor, 12A I(D), 600V, 0.25ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
      RoHS: Compliant      		35000
      • 1000:$2.1800
      • 500:$2.2900
      • 100:$2.3900
      • 25:$2.4900
      • 1:$2.6800
      IPB60R250CP
      DISTI # 726-IPB60R250CP      		Infineon Technologies AGMOSFET N-Ch 600V 12A D2PAK-2 CoolMOS CP
      RoHS: Compliant      		449
      • 1:$3.3200
      • 10:$2.6700
      • 100:$2.4300
      • 250:$2.1900
      • 500:$1.9700
      • 1000:$1.6500
      • 2000:$1.5700
      • 5000:$1.4400
      IPB60R250CPATMA1
      DISTI # 726-IPB60R250CPATMA1      		Infineon Technologies AGMOSFET N-Ch 600V 12A D2PAK-2 CoolMOS CP
      RoHS: Compliant      		0
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        OMO.#: OMO-IPB60R099CPAATMA1-INFINEON-TECHNOLOGIES

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        Mfr.#: IPB60R190C6 (6R190C6)

        OMO.#: OMO-IPB60R190C6-6R190C6--1190

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        Mfr.#: IPB60R199CP,6R199P

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        Verfügbarkeit
        Aktie:
        Available
        Auf Bestellung:
        1000
        Menge eingeben:
        Der aktuelle Preis von IPB60R250CP dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
        Referenzpreis (USD)
        Menge
        Stückpreis
        ext. Preis
        1
        2,16 $
        2,16 $
        10
        2,05 $
        20,52 $
        100
        1,94 $
        194,40 $
        500
        1,84 $
        918,00 $
        1000
        1,73 $
        1 728,00 $
        Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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