2SJ243-T1-A

2SJ243-T1-A
Mfr. #:
2SJ243-T1-A
Hersteller:
Rochester Electronics, LLC
Beschreibung:
Small Signal Field-Effect Transistor, P-Channel, Metal-oxide Semiconductor FET
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
2SJ243-T1-A Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Produkteigenschaft
Attributwert
Hersteller
RENESAS
Produktkategorie
IC-Chips
Tags
2SJ243-T1, 2SJ243-T, 2SJ243, 2SJ24, 2SJ2, 2SJ
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ical
Trans MOSFET P-CH 30V 0.1A 3-Pin SC-75 T/R
***ser
Single MOSFET Single MOSFET Pch
***i-Key Marketplace
MOSFET P-CH 30V 100MA SC75-3 USM
***emi
N-Channel MOSFET, Enhancement Mode, 60V, 0.115A, 2Ω
***et Europe
Transistor MOSFET Array Dual N-CH 60V 0.115A 6-Pin SOT-363 T/R
***ure Electronics
N-Channel 60 V 7.5 Ohm SMT Enhancement Mode Field Effect Transistor - SOT-363
***trelec
Transistor Polarity = N-Channel / Configuration = Dual / Continuous Drain Current (Id) mA = 115 / Drain-Source Voltage (Vds) V = 60 / ON Resistance (Rds(on)) Ohm = 7.5 / Gate-Source Voltage V = 20 / Turn-OFF Delay Time ns = 20 / Turn-ON Delay Time ns = 20 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 150 / Package Type = SOT-363 / Pins = 6 / Mounting Type = SMD / MSL = Level-1 / Packaging = Tape & Reel / Reflow Temperature Max. °C = 260 / Power Dissipation (Pd) mW = 200
***(Formerly Allied Electronics)
SI1031R-T1-GE3 P-channel MOSFET Transistor; 100 mA; 20 V; 3-Pin SC-75A
***ure Electronics
Single P-Channel 20 V 8 Ohms Surface Mount Power Mosfet - SC-75A
***ark
Transistor Polarity:p Channel; Drain Source Voltage Vds:20V; Continuous Drain Current Id:140Ma; On Resistance Rds(On):20Ohm; Transistor Mounting:surface Mount; Rds(On) Test Voltage Vgs:4.5V; Threshold Voltage Vgs:1.2V; Msl:- Rohs Compliant: No
***nell
MOSFET, P, SC-75A; Transistor Polarity: P Channel; Continuous Drain Current Id: 140mA; Drain Source Voltage Vds: -20V; On Resistance Rds(on): 20ohm; Rds(on) Test Voltage Vgs: -4.5V; Threshold Voltage Vgs: -1.2V; Power Dissipation Pd: 250mW; Transistor Case Style: SC-75; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: -; SVHC: No SVHC (15-Jun-2015); Alternate Case Style: SOT-416; Current Id Max: -140mA; ESD HBM: 2kV; External Depth: 1.7mm; External Length / Height: 0.8mm; External Width: 1.6mm; Junction Temperature Tj Max: 150°C; Junction Temperature Tj Min: -55°C; Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to +150°C; Power Dissipation Ptot Max: 250W; Pulse Current Idm: 500mA; SMD Marking: H; Voltage Vds Typ: -20V; Voltage Vgs Max: 6V; Voltage Vgs Rds on Measurement: 1.5V; Voltage Vgs th Max: -1.2V; Voltage Vgs th Min: -0.4V
***(Formerly Allied Electronics)
SI1062X-T1-GE3 N-channel MOSFET Transistor; 0.53 A; 20 V; 3-Pin SC-89
***ment14 APAC
MOSFET, N-CH, 20V, 0.53A, SC-89; Transistor Polarity:N Channel; Continuous Drain Current Id:530mA; Source Voltage Vds:20V; On Resistance
***nell
MOSFET, N-CH, 20V, 0.53A, SC-89; Transistor Polarity: N Channel; Continuous Drain Current Id: 530mA; Drain Source Voltage Vds: 20V; On Resistance Rds(on): 0.35ohm; Rds(on) Test Voltage Vgs: 4.5V; Threshold Voltage Vgs: 1V; Power Dissipation Pd: 220mW; Transistor Case Style: SC-89; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: TrenchFET Series; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (20-Jun-2016)
***roFlash
Mosfet; Power; N-ch; Vdss 20V; Rds(on) 5 Ohms; Id 140MA; SC-75A (SOT-416); Pd 250MW
***ure Electronics
Single N-Channel 20 V 5 Ohms Surface Mount Power Mosfet - SC-75A
*** Source Electronics
Trans MOSFET N-CH 20V 0.14A 3-Pin SC-75A T/R / MOSFET N-CH 20V 140MA SC-75A
***ment14 APAC
MOSFET ESD, N CH, 20V, 0.14A, SC89; Transistor Polarity:N Channel; Continuous Drain Current Id:140mA; Drain Source Voltage Vds:20V; On Resistance Rds(on):5ohm; Rds(on) Test Voltage Vgs:4.5V; Threshold Voltage Vgs Typ:900mV; Power Dissipation Pd:250mW; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:SC-89; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:140mA; Power Dissipation Pd:250mW; Voltage Vgs Max:6V
***emi
P-Channel PowerTrench® MOSFET, 2.5V Specified, -1.2 A, 180 mΩ
***ment14 APAC
MOSFET, P; Transistor Polarity:P Channel; Continuous Drain Current Id:1.2A; Drain Source Voltage Vds:-20V; On Resistance Rds(on):187mohm; Rds(on) Test Voltage Vgs:-4.5V; Threshold Voltage Vgs Typ:900mV; Power Dissipation Pd:750mW; Transistor Case Style:SC-70; No. of Pins:6; SVHC:No SVHC (19-Dec-2011); Current Id Max:1.2A; Package / Case:SC70; Power Dissipation Pd:750mW; Termination Type:SMD; Voltage Vds Typ:20V; Voltage Vgs Max:-900mV; Voltage Vgs Rds on Measurement:8V
***rchild Semiconductor
This P-Channel MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance. These devices are well suited for portable electronics applications.
***emi
P-Channel (-1.5V) Specified PowerTrench® MOSFET -20V, -0.83A, 0.5Ω
***nell
MOSFET, P CH, -20V, -0.83A, SC-89-3; Transistor Polarity: P Channel; Continuous Drain Current Id: -830mA; Drain Source Voltage Vds: -20V; On Resistance Rds(on): 0.28ohm; Rds(on) Test Voltage Vgs: -4.5V; Threshold Voltage Vgs: -700mV; Power Dissipation Pd: 625mW; Transistor Case Style: SC-89; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018)
***rchild Semiconductor
This Single P-Channel MOSFET has been designed using Fairchild Semiconductor’s advanced Power Trench process to optimize the r DS(on)@VGS = –1.5 V.
Teil # Mfg. Beschreibung Aktie Preis
2SJ243-T1-ARenesas Electronics CorporationSmall Signal Field-Effect Transistor, P-Channel, Metal-oxide Semiconductor FET
RoHS: Compliant
41333
  • 1000:$0.1800
  • 500:$0.1900
  • 100:$0.2000
  • 25:$0.2100
  • 1:$0.2300
Bild Teil # Beschreibung
2SJ241

Mfr.#: 2SJ241

OMO.#: OMO-2SJ241-1190

POWER FIELD-EFFECT TRANSISTOR, 20A I(D), 60V, 0.09OHM, 1-ELEMENT, P-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET
2SJ241 J241

Mfr.#: 2SJ241 J241

OMO.#: OMO-2SJ241-J241-1190

Neu und Original
2SJ243-T1 , RLZ TE-11 24

Mfr.#: 2SJ243-T1 , RLZ TE-11 24

OMO.#: OMO-2SJ243-T1-RLZ-TE-11-24-1190

Neu und Original
2SJ2434-000111F

Mfr.#: 2SJ2434-000111F

OMO.#: OMO-2SJ2434-000111F-1190

Neu und Original
2SJ244

Mfr.#: 2SJ244

OMO.#: OMO-2SJ244-1190

Neu und Original
2SJ244JY TR

Mfr.#: 2SJ244JY TR

OMO.#: OMO-2SJ244JY-TR-1190

Neu und Original
2SJ245

Mfr.#: 2SJ245

OMO.#: OMO-2SJ245-1190

Neu und Original
2SJ245L-E

Mfr.#: 2SJ245L-E

OMO.#: OMO-2SJ245L-E-1190

Neu und Original
2SJ246S

Mfr.#: 2SJ246S

OMO.#: OMO-2SJ246S-1190

Neu und Original
2SJ246STL

Mfr.#: 2SJ246STL

OMO.#: OMO-2SJ246STL-1190

Neu und Original
Verfügbarkeit
Aktie:
Available
Auf Bestellung:
4500
Menge eingeben:
Der aktuelle Preis von 2SJ243-T1-A dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
Referenzpreis (USD)
Menge
Stückpreis
ext. Preis
1
0,27 $
0,27 $
10
0,26 $
2,56 $
100
0,24 $
24,30 $
500
0,23 $
114,75 $
1000
0,22 $
216,00 $
Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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