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SIDR870ADP-T1-GE3

SIDR870ADP-T1-GE3
Mfr. #:
SIDR870ADP-T1-GE3
Hersteller:
Vishay / Siliconix
Beschreibung:
MOSFET 100V Vds 20V Vgs PowerPAK SO-8DC
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
SIDR870ADP-T1-GE3 Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
SIDR870ADP-T1-GE3 DatasheetSIDR870ADP-T1-GE3 Datasheet (P4-P6)SIDR870ADP-T1-GE3 Datasheet (P7-P8)
ECAD Model:
Mehr Informationen:
SIDR870ADP-T1-GE3 Mehr Informationen
Produkteigenschaft
Attributwert
Hersteller:
Vishay
Produktkategorie:
MOSFET
RoHS:
Y
Technologie:
Si
Montageart:
SMD/SMT
Paket / Koffer:
PowerPAK-SO-8DC-8
Anzahl der Kanäle:
1 Channel
Polarität des Transistors:
N-Kanal
Vds - Drain-Source-Durchbruchspannung:
100 V
Id - Kontinuierlicher Drainstrom:
95 A
Rds On - Drain-Source-Widerstand:
10.5 mOhms
Vgs th - Gate-Source-Schwellenspannung:
3 V
Vgs - Gate-Source-Spannung:
20 V
Qg - Gate-Ladung:
25.5 nC
Minimale Betriebstemperatur:
- 55 C
Maximale Betriebstemperatur:
+ 150 C
Pd - Verlustleistung:
125 W
Aufbau:
Single
Kanalmodus:
Erweiterung
Handelsname:
TrenchFET
Verpackung:
Spule
Serie:
SID
Marke:
Vishay / Siliconix
Vorwärtstranskonduktanz - Min:
68 S
Abfallzeit:
9 ns
Produktart:
MOSFET
Anstiegszeit:
15 ns
Werkspackungsmenge:
3000
Unterkategorie:
MOSFETs
Typische Ausschaltverzögerungszeit:
33 ns
Typische Einschaltverzögerungszeit:
17 ns
Tags
SIDR, SID
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***et
TrenchFET Power MOSFET Single N-Channel 100V VDS ±20V VGS 95A ID 8-Pin PowerPAK SOIC T/R
***ical
Trans MOSFET N-CH 100V 95A 8-Pin PowerPAK SO EP T/R
***i-Key
MOSFET N-CH 100V 95A SO-8
***ark
Mosfet, N-Ch, 100V, 95A, Powerpak So; Transistor Polarity:n Channel; Continuous Drain Current Id:95A; Drain Source Voltage Vds:100V; On Resistance Rds(On):0.0055Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Power Rohs Compliant: Yes
***ment14 APAC
Prices include import duty and tax. MOSFET, N-CH, 100V, 95A, POWERPAK SO; Transistor Polarity:N Channel; Continuous Drain Current Id:95A; Drain Source Voltage Vds:100V; On Resistance Rds(on):0.0055ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Power Dissipation Pd:125W; Transistor Case Style:PowerPAK SO; No. of Pins:8Pins; Operating Temperature Max:150°C; Product Range:TrenchFET Series; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (15-Jan-2018)
***nell
MOSFET, CA-N, 100V, 95A, POWERPAK SO; Polarità Transistor:Canale N; Corrente Continua di Drain Id:95A; Tensione Drain Source Vds:100V; Resistenza di Attivazione Rds(on):0.0055ohm; Tensione Vgs di Misura Rds(on):10V; Tensione di Soglia Vgs:3V; Dissipazione di Potenza Pd:125W; Modello Case Transistor:PowerPAK SO; No. di Pin:8Pin; Temperatura di Esercizio Max:150°C; Gamma Prodotti:TrenchFET Series; Standard di Qualifica Automotive:-; Livello di Sensibilità all'Umidità (MSL):MSL 1 - Non Limitata; Sostanze Estremamente Preoccupanti (SVHC):No SVHC (15-Jan-2018)
TrenchFET® Gen IV Top-Side Double Cooling MOSFETs
Vishay TrenchFET® Gen IV Top-Side Double Cooling MOSFETs feature top-side cooling and offer an additional venue for thermal transfer. These MOSFETs come in the PowerPAK® SO-8DC package. The TrenchFET double cooling MOSFETs offer variants with different drain-source breakdown voltages of 25V, 30V, 40V, 60V, 80V, 100V, 150V, and 200V. These N-channel MOSFETs operate at a temperature range from -55°C to 150°C. The TrenchFET MOSFETs can be utilized for product-specific applications including synchronous rectification, DC/DC conversion, power supplies, battery management, and others.
Teil # Mfg. Beschreibung Aktie Preis
SIDR870ADP-T1-GE3
DISTI # V72:2272_21388906		Vishay IntertechnologiesSIDR870ADP-T1-GE35870
  • 75000:$0.8958
  • 30000:$0.9084
  • 15000:$0.9209
  • 6000:$0.9335
  • 3000:$0.9460
  • 1000:$0.9585
  • 500:$1.1163
  • 250:$1.1842
  • 100:$1.3246
  • 50:$1.5084
  • 25:$1.6760
  • 10:$1.6987
  • 1:$2.2457
SIDR870ADP-T1-GE3
DISTI # V99:2348_21388906		Vishay IntertechnologiesSIDR870ADP-T1-GE30
  • 6000:$0.9696
SIDR870ADP-T1-GE3
DISTI # SIDR870ADP-T1-GE3CT-ND		Vishay SiliconixMOSFET N-CH 100V 95A SO-8
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		5514In Stock
  • 1000:$1.0374
  • 500:$1.2520
  • 100:$1.5238
  • 10:$1.8960
  • 1:$2.1100
SIDR870ADP-T1-GE3
DISTI # SIDR870ADP-T1-GE3DKR-ND		Vishay SiliconixMOSFET N-CH 100V 95A SO-8
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		5514In Stock
  • 1000:$1.0374
  • 500:$1.2520
  • 100:$1.5238
  • 10:$1.8960
  • 1:$2.1100
SIDR870ADP-T1-GE3
DISTI # SIDR870ADP-T1-GE3TR-ND		Vishay SiliconixMOSFET N-CH 100V 95A SO-8
RoHS: Compliant
Min Qty: 3000
Container: Tape & Reel (TR)		3000In Stock
  • 6000:$0.9030
  • 3000:$0.9377
SIDR870ADP-T1-GE3
DISTI # 31950099		Vishay IntertechnologiesSIDR870ADP-T1-GE35870
  • 7:$2.2457
SIDR870ADP-T1-GE3
DISTI # SIDR870ADP-T1-GE3		Vishay IntertechnologiesTrenchFET Power MOSFET Single N-Channel 100V VDS ±20V VGS 95A ID 8-Pin PowerPAK SOIC T/R - Tape and Reel (Alt: SIDR870ADP-T1-GE3)
RoHS: Compliant
Min Qty: 6000
Container: Reel		Americas - 0
  • 60000:$0.8479
  • 30000:$0.8709
  • 18000:$0.8959
  • 12000:$0.9339
  • 6000:$0.9619
SIDR870ADP-T1-GE3
DISTI # 59AC7342		Vishay IntertechnologiesN-CHANNEL 100-V (D-S) MOSFET0
  • 10000:$0.8270
  • 6000:$0.8600
  • 4000:$0.8930
  • 2000:$0.9930
  • 1000:$1.0500
  • 1:$1.1200
SIDR870ADP-T1-GE3
DISTI # 50AC9645		Vishay IntertechnologiesMOSFET, N-CH, 100V, 95A, POWERPAK SO,Transistor Polarity:N Channel,Continuous Drain Current Id:95A,Drain Source Voltage Vds:100V,On Resistance Rds(on):0.0055ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:3V,Power RoHS Compliant: Yes5622
  • 500:$1.1700
  • 250:$1.2600
  • 100:$1.3400
  • 50:$1.4700
  • 25:$1.6000
  • 10:$1.7300
  • 1:$2.0800
SIDR870ADP-T1-GE3
DISTI # 78-SIDR870ADP-T1-GE3		Vishay IntertechnologiesMOSFET 100V Vds 20V Vgs PowerPAK SO-8DC
RoHS: Compliant		8917
  • 1:$2.0600
  • 10:$1.7100
  • 100:$1.3300
  • 500:$1.1600
  • 1000:$0.9600
  • 3000:$0.8940
  • 6000:$0.8600
  • 9000:$0.8270
SIDR870ADP-T1-GE3
DISTI # 2846628		Vishay IntertechnologiesMOSFET, N-CH, 100V, 95A, POWERPAK SO
RoHS: Compliant		5622
  • 1000:$1.5600
  • 500:$1.8800
  • 100:$2.2800
  • 10:$2.8400
  • 1:$3.1600
SIDR870ADP-T1-GE3
DISTI # 2846628		Vishay IntertechnologiesMOSFET, N-CH, 100V, 95A, POWERPAK SO5652
  • 500:£0.8910
  • 250:£0.9560
  • 100:£1.0200
  • 10:£1.3400
  • 1:£1.8000
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Verfügbarkeit
Aktie:
Available
Auf Bestellung:
1991
Menge eingeben:
Der aktuelle Preis von SIDR870ADP-T1-GE3 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
Referenzpreis (USD)
Menge
Stückpreis
ext. Preis
1
2,06 $
2,06 $
10
1,71 $
17,10 $
100
1,33 $
133,00 $
500
1,16 $
580,00 $
1000
0,96 $
960,00 $
Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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