IPI034NE7N3GAKSA1

IPI034NE7N3GAKSA1
Mfr. #:
IPI034NE7N3GAKSA1
Hersteller:
Infineon Technologies AG
Beschreibung:
Power Field-Effect Transistor, 100A I(D), 75V, 0.0034ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
IPI034NE7N3GAKSA1 Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Produkteigenschaft
Attributwert
Tags
IPI034NE7N3G, IPI034, IPI03, IPI0, IPI
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***et
Trans MOSFET N-CH 75V 100A 3-Pin 3TO-262 Tube
***i-Key
MOSFET N-CH 75V 100A TO262-3
Teil # Mfg. Beschreibung Aktie Preis
IPI034NE7N3GAKSA1
DISTI # IPI034NE7N3GAKSA1
Infineon Technologies AGTrans MOSFET N-CH 75V 100A 3-Pin 3TO-262 Tube - Bulk (Alt: IPI034NE7N3GAKSA1)
RoHS: Compliant
Min Qty: 25000
Container: Bulk
Americas - 0
  • 25002:$0.0105
  • 50002:$0.0105
  • 125000:$0.0105
  • 250000:$0.0105
  • 25000:$0.0167
IPI034NE7N3GAKSA1Infineon Technologies AGPower Field-Effect Transistor, 100A I(D), 75V, 0.0034ohm, N-Channel, MOSFET
RoHS: Compliant
498
  • 1:$0.0200
  • 25:$0.0200
  • 100:$0.0200
  • 500:$0.0200
  • 1000:$0.0200
Bild Teil # Beschreibung
IPI034NE7N3 G

Mfr.#: IPI034NE7N3 G

OMO.#: OMO-IPI034NE7N3-G

MOSFET N-Ch 75V 100A I2PAK-3 OptiMOS 3
IPI034NE7N3GAKSA1

Mfr.#: IPI034NE7N3GAKSA1

OMO.#: OMO-IPI034NE7N3GAKSA1-1190

Power Field-Effect Transistor, 100A I(D), 75V, 0.0034ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA
IPI034NE7N3

Mfr.#: IPI034NE7N3

OMO.#: OMO-IPI034NE7N3-1190

Neu und Original
IPI034NE7N3G

Mfr.#: IPI034NE7N3G

OMO.#: OMO-IPI034NE7N3G-1190

Power Field-Effect Transistor, 100A I(D), 75V, 0.0034ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA
IPI034NE7N3G(034NE7N)

Mfr.#: IPI034NE7N3G(034NE7N)

OMO.#: OMO-IPI034NE7N3G-034NE7N--1190

Neu und Original
IPI034NE7N3GS

Mfr.#: IPI034NE7N3GS

OMO.#: OMO-IPI034NE7N3GS-1190

Neu und Original
IPI034NE7N3 G

Mfr.#: IPI034NE7N3 G

OMO.#: OMO-IPI034NE7N3-G-INFINEON-TECHNOLOGIES

IGBT Transistors MOSFET N-Ch 75V 100A I2PAK-3 OptiMOS 3
Verfügbarkeit
Aktie:
Available
Auf Bestellung:
1500
Menge eingeben:
Der aktuelle Preis von IPI034NE7N3GAKSA1 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
Referenzpreis (USD)
Menge
Stückpreis
ext. Preis
1
0,02 $
0,02 $
10
0,01 $
0,14 $
100
0,01 $
1,35 $
500
0,01 $
6,40 $
1000
0,01 $
12,00 $
Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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