 | |  | |
| PartNumber | IPI032N06N3 G | IPI030N10N3GXKSA1 | IPI030N10N3GHKSA1 |
| Description | MOSFET N-Ch 60V 120A I2PAK-3 OptiMOS 3 | MOSFET N-Ch 100V 100A I2PAK-3 | MOSFET N-CH 100V 100A TO262-3 |
| Manufacturer | Infineon | Infineon | - |
| Product Category | MOSFET | MOSFET | - |
| RoHS | Y | Y | - |
| Technology | Si | Si | - |
| Mounting Style | Through Hole | Through Hole | - |
| Package / Case | TO-262-3 | TO-262-3 | - |
| Number of Channels | 1 Channel | 1 Channel | - |
| Transistor Polarity | N-Channel | N-Channel | - |
| Vds Drain Source Breakdown Voltage | 60 V | 100 V | - |
| Id Continuous Drain Current | 120 A | 100 A | - |
| Rds On Drain Source Resistance | 2.3 mOhms | 3 mOhms | - |
| Vgs th Gate Source Threshold Voltage | 2 V | - | - |
| Vgs Gate Source Voltage | 20 V | - | - |
| Qg Gate Charge | 165 nC | - | - |
| Minimum Operating Temperature | - 55 C | - | - |
| Maximum Operating Temperature | + 175 C | - | - |
| Pd Power Dissipation | 188 W | - | - |
| Configuration | Single | Single | - |
| Channel Mode | Enhancement | - | - |
| Tradename | OptiMOS | OptiMOS | - |
| Packaging | Tube | Tube | - |
| Height | 9.45 mm | 9.45 mm | - |
| Length | 10.2 mm | 10.2 mm | - |
| Series | OptiMOS 3 | OptiMOS 3 | - |
| Transistor Type | 1 N-Channel | 1 N-Channel | - |
| Width | 4.5 mm | 4.5 mm | - |
| Brand | Infineon Technologies | Infineon Technologies | - |
| Forward Transconductance Min | 75 S | - | - |
| Fall Time | 20 ns | - | - |
| Product Type | MOSFET | MOSFET | - |
| Rise Time | 120 ns | - | - |
| Factory Pack Quantity | 500 | 500 | - |
| Subcategory | MOSFETs | MOSFETs | - |
| Typical Turn Off Delay Time | 62 ns | - | - |
| Typical Turn On Delay Time | 35 ns | - | - |
| Part # Aliases | IPI032N06N3GAKSA1 IPI32N6N3GXK SP000680650 | G IPI030N10N3 IPI3N1N3GXK SP000680648 | - |
| Unit Weight | 0.084199 oz | 0.073511 oz | - |
| Hersteller | Teil # | Beschreibung | RFQ |
|---|---|---|---|
Infineon Technologies |
IPI032N06N3 G | MOSFET N-Ch 60V 120A I2PAK-3 OptiMOS 3 | |
| IPI030N10N3GXKSA1 | MOSFET N-Ch 100V 100A I2PAK-3 | ||
| IPI037N08N3GXKSA1 | MOSFET N-Ch 80V 100A I2PAK-3 | ||
| IPI032N06N3GAKSA1 | MOSFET N-Ch 60V 120A I2PAK-3 OptiMOS 3 | ||
| IPI032N06N3GAKSA1 | MOSFET N-CH 60V 120A | ||
| IPI037N06L3GHKSA1 | MOSFET N-CH 60V 90A TO262-3 | ||
| IPI030N10N3GHKSA1 | MOSFET N-CH 100V 100A TO262-3 | ||
| IPI032N06N3 G | MOSFET N-CH 60V 120A TO262-3 | ||
| IPI037N08N3GHKSA1 | MOSFET N-CH 80V 100A TO262-3 | ||
| IPI03N03LA | MOSFET N-CH 25V 80A I2PAK | ||
| IPI034NE7N3 G | IGBT Transistors MOSFET N-Ch 75V 100A I2PAK-3 OptiMOS 3 | ||
| IPI030N10N3GXKSA1 | RF Bipolar Transistors MOSFET N-Ch 100V 100A I2PAK-3 | ||
| IPI037N08N3GXKSA1 | RF Bipolar Transistors MOSFET N-Ch 80V 100A I2PAK-3 | ||
Infineon Technologies |
IPI03N03LA | MOSFET N-Ch 25V 80A I2PAK-3 | |
| IPI034NE7N3 G | MOSFET N-Ch 75V 100A I2PAK-3 OptiMOS 3 | ||
| IPI037N08N3GHKSA1 | MOSFET MV POWER MOS | ||
| IPI034NE7N3GAKSA1 | Power Field-Effect Transistor, 100A I(D), 75V, 0.0034ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA | ||
| IPI030N10N3G | Neu und Original | ||
| IPI030N10N3G 030N10N | Neu und Original | ||
| IPI032N06N3G(032N06N) | Neu und Original | ||
| IPI033NE7N G | Neu und Original | ||
| IPI033NE7N3G | Neu und Original | ||
| IPI034NE7N3 | Neu und Original | ||
| IPI034NE7N3G | Power Field-Effect Transistor, 100A I(D), 75V, 0.0034ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA | ||
| IPI034NE7N3G(034NE7N) | Neu und Original | ||
| IPI034NE7N3GS | Neu und Original | ||
| IPI037N06L3 | Neu und Original | ||
| IPI037N06L3G | Neu und Original | ||
| IPI037N08N3 | Neu und Original | ||
| IPI037N08N3G | Neu und Original | ||
| IPI037N08N3 G | MOSFET N-Ch 80V 100A I2PAK-3 OptiMOS 3 |