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IRF6655TR1

IRF6655TR1
Mfr. #:
IRF6655TR1
Hersteller:
Infineon Technologies
Beschreibung:
MOSFET N-CH 100V DIRECTFET-SH
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
IRF6655TR1 Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
IRF6655TR1 DatasheetIRF6655TR1 Datasheet (P4-P6)IRF6655TR1 Datasheet (P7-P9)IRF6655TR1 Datasheet (P10-P11)
ECAD Model:
Produkteigenschaft
Attributwert
Tags
IRF6655TR1, IRF6655T, IRF665, IRF66, IRF6, IRF
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ied Electronics & Automation
MOSFET, Power; N-Channel; 100 V (Min.); 34 A (Max.); 42 W (Max.) @ degC
***ark
MOSFET, N, DIRECTFET, SH; Transistor type:MOSFET; Voltage, Vds typ:100V; Current, Id cont:19A; Resistance, Rds on:62mohm; Voltage, Vgs Rds on measurement:10V; Voltage, Vgs th typ:4.8V; Case style:SH; Capacitance, Ciss typ:530pF; RoHS Compliant: Yes
***ment14 APAC
MOSFET, N, DIRECTFET, SH; Transistor Polarity:N Channel; Continuous Drain Current Id:19A; Drain Source Voltage Vds:100V; On Resistance Rds(on):62mohm; Threshold Voltage Vgs Typ:4.8V; Power Dissipation Pd:4.2W; Transistor Case Style:SH; No. of Pins:6; SVHC:No SVHC (20-Jun-2011); Capacitance Ciss Typ:530pF; Charge Qrr @ Tj = 25°C Typ:37nC; Current Temperature:25°C; External Depth:4.85mm; External Length / Height:0.7mm; External Width:3.95mm; Full Power Rating Temperature:25°C; IC Package (Case style):SH; Junction Temperature Tj Max:150°C; Junction Temperature Tj Min:-40°C; No. of Transistors:1; On State Resistance Max:62mohm; Package / Case:SH; Power Dissipation Pd:2.2W; Power Dissipation Pd:4.2W; Pulse Current Idm:34A; Reverse Recovery Time trr Typ:31ns; SMD Marking:6655; Termination Type:SMD; Voltage Vds:100V; Voltage Vds Typ:100V; Voltage Vgs Max:20V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:4.8V; Voltage Vgs th Min:2.8V
Teil # Mfg. Beschreibung Aktie Preis
IRF6655TR1PBF
DISTI # 23987473		Infineon Technologies AGTrans MOSFET N-CH Si 100V 4.2A 6-Pin Direct-FET SH T/R
RoHS: Compliant		141
  • 55:$1.4031
IRF6655TR1
DISTI # IRF6655TR1-ND		Infineon Technologies AGMOSFET N-CH 100V DIRECTFET-SH
RoHS: Not compliant
Min Qty: 1000
Container: Tape & Reel (TR)		Limited Supply - Call
    IRF6655TR1PBF
    DISTI # IRF6655TR1PBF-ND    		Infineon Technologies AGMOSFET N-CH 100V 4.2A DIRECTFET
    RoHS: Compliant
    Min Qty: 1000
    Container: Tape & Reel (TR)    		Limited Supply - Call
      IRF6655TR1PBF
      DISTI # 41M6926      		Infineon Technologies AGTrans MOSFET N-CH 100V 4.2A 6-Pin Direct-FET SH T/R - Product that comes on tape, but is not reeled (Alt: 41M6926)
      RoHS: Compliant
      Min Qty: 1
      Container: Ammo Pack      		Americas - 0
        IRF6655TR1PBF
        DISTI # 41M6926        		Infineon Technologies AGN MOSFET, 100V, 3.4A, DIRECTFET SH,Transistor Polarity:N Channel,Continuous Drain Current Id:3.4A,Drain Source Voltage Vds:100V,On Resistance Rds(on):0.053ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:4V RoHS Compliant: Yes141
        • 1:$0.9120
        • 10:$0.9120
        • 25:$0.9120
        • 50:$0.9120
        • 100:$0.9120
        • 250:$0.9120
        • 500:$0.9120
        IRF6655TR1PBF
        DISTI # 70018849        		Infineon Technologies AGMOSFET,N-Ch,VDSS 100V,RDS(ON) 53 mOhm,ID 4.2A,DirectFET
        RoHS: Compliant        		0
        • 1000:$1.6700
        • 2000:$1.5200
        IRF6655TR1PBFInternational Rectifier 51
          IRF6655TR1PBFInternational Rectifier 883
            IRF6655TR1PBF.
            DISTI # 1375057            		Infineon Technologies AGMOSFET
            RoHS: Compliant            		141
            • 1:£1.3100
            IRF6655TR1
            DISTI # 9266615            		Infineon Technologies AG 
            RoHS: Compliant            		0
            • 1000:$1.5600
            • 500:$1.6800
            • 250:$1.9000
            • 100:$2.1200
            • 10:$2.6200
            • 1:$3.1900
            IRF6655TR1PBF.
            DISTI # 1375057            		Infineon Technologies AGMOSFET
            RoHS: Compliant            		141
            • 1:$2.0000
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            Verfügbarkeit
            Aktie:
            Available
            Auf Bestellung:
            4500
            Menge eingeben:
            Der aktuelle Preis von IRF6655TR1 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
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