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| Teil # | Mfg. | Beschreibung | Aktie | Preis |
|---|---|---|---|---|
| 2MBI600NT-060 DISTI # FE0000000000051 | Fuji Electric Co Ltd | Insulated Gate Bipolar Transistor,600AI(C),600VV(BR)CES, N-Channel RoHS: Compliant | 0 in Stock0 on Order |
| Bild | Teil # | Beschreibung |
|---|---|---|
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Mfr.#: 2MBI600NT-060 OMO.#: OMO-2MBI600NT-060-1190 |
Insulated Gate Bipolar Transistor,600AI(C),600VV(BR)CES, N-Channel |
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Mfr.#: 2MBI600VE-060 OMO.#: OMO-2MBI600VE-060-1190 |
Neu und Original |
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Mfr.#: 2MBI600VE-120-50 OMO.#: OMO-2MBI600VE-120-50-1190 |
2 Pack IGBT VE-series, 600A, 1200V |
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Mfr.#: 2MBI600VN-120 OMO.#: OMO-2MBI600VN-120-1190 |
Neu und Original |
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Mfr.#: 2MBI600VN-120-50 OMO.#: OMO-2MBI600VN-120-50-1190 |
Insulated GateBipolarTransistor,600AI(C),1200VV(BR)CES, N-Channel |
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Mfr.#: 2MBI600VN-120-50-M OMO.#: OMO-2MBI600VN-120-50-M-1190 |
Insulated GateBipolarTransistor,600AI(C),1200VV(BR)CES, N-Channel |
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Mfr.#: 2MBI600VN-120-50/SL600H1 |
Neu und Original |
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Mfr.#: 2MBI600VN-170-50 OMO.#: OMO-2MBI600VN-170-50-1190 |
Neu und Original |
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Mfr.#: 2MBI600VXA-120E-50 OMO.#: OMO-2MBI600VXA-120E-50-1190 |
IGBT, MODULE, DUAL N CHANNEL, 1.2KV, 800A, Transistor Polarity:Dual N Channel, DC Collector Current:800A, Collector Emitter Saturation Voltage Vce(on):1.85V, Power Dissipation Pd:3.35kW, Collecto |
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Mfr.#: 2MBI600VXA-120E-51 OMO.#: OMO-2MBI600VXA-120E-51-1190 |
IGBT HPM |