PartNumber | 2MBI600NT-060 | 2MBI600U2E-060 | 2MBI600VE-060 |
Description | Insulated Gate Bipolar Transistor,600AI(C),600VV(BR)CES, N-Channel | 600A, 650V, N-CHANNEL IGBT | |
Manufacturer | - | FUJI | - |
Product Category | - | Module | - |
Hersteller | Teil # | Beschreibung | RFQ |
---|---|---|---|
2MBI600NT-060 | Insulated Gate Bipolar Transistor,600AI(C),600VV(BR)CES, N-Channel | ||
2MBI600U2E-060 | 600A, 650V, N-CHANNEL IGBT | ||
2MBI600VE-060 | Neu und Original | ||
2MBI600VE-120-50 | 2 Pack IGBT VE-series, 600A, 1200V | ||
2MBI600VN-120 | Neu und Original | ||
2MBI600VN-120-50 | Insulated GateBipolarTransistor,600AI(C),1200VV(BR)CES, N-Channel | ||
2MBI600VN-120-50-M | Insulated GateBipolarTransistor,600AI(C),1200VV(BR)CES, N-Channel | ||
2MBI600VN-120-50/SL600H1 | Neu und Original | ||
2MBI600VN-170-50 | Neu und Original | ||
2MBI600VXA-120E-50 | IGBT, MODULE, DUAL N CHANNEL, 1.2KV, 800A, Transistor Polarity:Dual N Channel, DC Collector Current:800A, Collector Emitter Saturation Voltage Vce(on):1.85V, Power Dissipation Pd:3.35kW, Collecto | ||
2MBI600VXA-120E-51 | IGBT HPM | ||
2MBI650VXA-170-50 | Neu und Original | ||
2MBI650VXA-170E-50 | IGBT, MODULE, DUAL N CHANNEL, 1.7KV, 900A, Transistor Polarity:Dual N Channel, DC Collector Current:900A, Collector Emitter Saturation Voltage Vce(on):2.1V, Power Dissipation Pd:4.15kW, Collector |