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DF23MR12W1M1B11BOMA1

DF23MR12W1M1B11BOMA1
Mfr. #:
DF23MR12W1M1B11BOMA1
Hersteller:
Infineon Technologies
Beschreibung:
Discrete Semiconductor Modules
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
DF23MR12W1M1B11BOMA1 Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Produkteigenschaft
Attributwert
Hersteller:
Infineon
Produktkategorie:
Diskrete Halbleitermodule
RoHS:
Y
Produkt:
Leistungs-MOSFET-Module
Typ:
SiC-Leistungs-MOSFET
Vf - Durchlassspannung:
4 V
Vgs - Gate-Source-Spannung:
- 10 V, 20 V
Montageart:
Drücken Sie Fit
Paket / Koffer:
Easy1B-2
Minimale Betriebstemperatur:
- 40 C
Maximale Betriebstemperatur:
+ 150 C
Verpackung:
Tablett
Aufbau:
Dual
Marke:
Infineon-Technologien
Polarität des Transistors:
N-Kanal
Abfallzeit:
13 ns
Id - Kontinuierlicher Drainstrom:
25 A
Betriebsversorgungsspannung:
-
Pd - Verlustleistung:
20 mW
Produktart:
Diskrete Halbleitermodule
Rds On - Drain-Source-Widerstand:
45 mOhms
Anstiegszeit:
7.2 ns
Werkspackungsmenge:
24
Unterkategorie:
Diskrete Halbleitermodule
Handelsname:
CoolSIC
Typische Ausschaltverzögerungszeit:
38.5 ns
Typische Einschaltverzögerungszeit:
11.5 ns
Vds - Drain-Source-Durchbruchspannung:
1200 V
Vgs th - Gate-Source-Schwellenspannung:
3.5 V
Teil # Aliase:
DF23MR12W1M1_B11 SP001602244
Tags
DF23, DF2
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***el Electronic
Multilayer Ceramic Capacitors MLCC - SMD/SMT 0201 6.0pF 50volts C0G +/-0.5pF
***ure Electronics
N-Channel 1200 V 45 mOhm CoolSiC EasyPACK PressFIT/NTC Trench Mosfet Module
***ark
Mosfet Module, N-Ch, 1.2Kv, 30A; Transistor Polarity:n Channel; Continuous Drain Current Id:30A; Drain Source Voltage Vds:1.2Kv; On Resistance Rds(On):0.045Ohm; Rds(On) Test Voltage Vgs:-; Threshold Voltage Vgs:4.5V; Power Rohs Compliant: Yes
***ineon
Easy 1B 1200 V / 23 m booster module with CoolSiC MOSFET, NTC and PressFIT Contact Technology | Summary of Features: High current density; Best in class switching and conduction losses; Low inductive design; Integrated NTC temperature sensor; PressFIT contact technology; RoHS-compliant modules | Benefits: Highest efficiency for reduced cooling effort; Higher frequency operation; Increased power density; Optimized customers development cycle time and cost | Target Applications: drives; solar; ups; battery-charger
Teil # Mfg. Beschreibung Aktie Preis
DF23MR12W1M1B11BOMA1
DISTI # V99:2348_18205128		Infineon Technologies AGTrans MOSFET N-CH SiC 1.2KV 30A 22-Pin Tray10
  • 100:$81.4500
  • 25:$85.9400
  • 10:$89.0699
  • 5:$94.1700
  • 1:$96.8900
DF23MR12W1M1B11BOMA1
DISTI # DF23MR12W1M1B11BOMA1-ND		Infineon Technologies AGMOSFET MODULE 1200V 25A
RoHS: Compliant
Min Qty: 24
Container: Tray		Limited Supply - Call
    DF23MR12W1M1B11BOMA1
    DISTI # 32135610    		Infineon Technologies AGTrans MOSFET N-CH SiC 1.2KV 30A 22-Pin Tray10
    • 1:$96.8900
    DF23MR12W1M1B11BOMA1
    DISTI # 33AC0629    		Infineon Technologies AGMOSFET MODULE, N-CH, 1.2KV, 30A,Transistor Polarity:N Channel,Continuous Drain Current Id:30A,Drain Source Voltage Vds:1.2kV,On Resistance Rds(on):0.045ohm,Rds(on) Test Voltage Vgs:-,Threshold Voltage Vgs:4.5V,Power RoHS Compliant: Yes0
    • 10:$91.0300
    • 5:$95.3200
    • 1:$97.1000
    DF23MR12W1M1B11BOMA1
    DISTI # 726-DF23MR12W1M1B11    		Infineon Technologies AGDiscrete Semiconductor Modules
    RoHS: Compliant    		24
    • 1:$97.1000
    • 5:$95.3200
    • 10:$91.0300
    • 25:$88.0000
    • 50:$87.9900
    DF23MR12W1M1B11BOMA1
    DISTI # 2778389    		Infineon Technologies AGMOSFET MODULE, N-CH, 1.2KV, 30A
    RoHS: Compliant    		2
    • 1:£47.3900
    DF23MR12W1M1B11BOMA1
    DISTI # 2778389    		Infineon Technologies AGMOSFET MODULE, N-CH, 1.2KV, 30A
    RoHS: Compliant    		2
    • 50:$134.2700
    • 10:$138.9000
    • 5:$143.8600
    • 1:$149.1900
    Bild Teil # Beschreibung
    DF23MR12W1M1B11BPSA1

    Mfr.#: DF23MR12W1M1B11BPSA1

    OMO.#: OMO-DF23MR12W1M1B11BPSA1

    		 Discrete Semiconductor Modules
    DF23MR12W1M1B11BOMA1

    Mfr.#: DF23MR12W1M1B11BOMA1

    OMO.#: OMO-DF23MR12W1M1B11BOMA1

    		 Discrete Semiconductor Modules
    DF23MR12W1M1B11BPSA1

    Mfr.#: DF23MR12W1M1B11BPSA1

    OMO.#: OMO-DF23MR12W1M1B11BPSA1-INFINEON-TECHNOLOGIES

    		 MOSFET MOD 1200V 25A
    DF23MR12W1M1B11BOMA1

    Mfr.#: DF23MR12W1M1B11BOMA1

    OMO.#: OMO-DF23MR12W1M1B11BOMA1-INFINEON-TECHNOLOGIES

    		 Trans MOSFET N-CH SiC 1.2KV 30A 22-Pin Tray
    Verfügbarkeit
    Aktie:
    24
    Auf Bestellung:
    2007
    Menge eingeben:
    Der aktuelle Preis von DF23MR12W1M1B11BOMA1 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
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