DMN2028USS-13

Mfr. #:: DMN2028USS-13
Hersteller:: Diodes Incorporated
Beschreibung:: MOSFET N-Ch FET VDSS 20V VGSS 20V ID 9.8A
Lebenszyklus:: Neu von diesem Hersteller.
Datenblatt:: DMN2028USS-13 Datenblatt
Die Zustellung:: DHL FedEx Ups TNT EMS
Zahlung:: T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:: DMN2028USS-13 Datasheet DMN2028USS-13 Datasheet (P4-P6)DMN2028USS-13 Datasheet (P7)
ECAD Model:
Mehr Informationen:: DMN2028USS-13 Mehr Informationen

Produkteigenschaft
Attributwert

Hersteller:: Eingebaute Dioden

Produktkategorie:: MOSFET

RoHS:: Y

Technologie:: Si

Montageart:: SMD/SMT

Paket / Koffer:: SO-8

Anzahl der Kanäle:: 1 Channel

Polarität des Transistors:: N-Kanal

Vds - Drain-Source-Durchbruchspannung:: 20 V

Id - Kontinuierlicher Drainstrom:: 9.8 A

Rds On - Drain-Source-Widerstand:: 20 mOhms

Vgs - Gate-Source-Spannung:: 12 V

Qg - Gate-Ladung:: 11.6 nC

Minimale Betriebstemperatur:: - 55 C

Maximale Betriebstemperatur:: + 150 C

Pd - Verlustleistung:: 1.56 W

Aufbau:: Single

Kanalmodus:: Erweiterung

Verpackung:: Spule

Serie:: DMN2028

Transistortyp:: 1 N-Channel

Typ:: N-Kanal Enhancement Mode MOSFET

Marke:: Eingebaute Dioden

Vorwärtstranskonduktanz - Min:: 16 S

Abfallzeit:: 12.33 ns

Produktart:: MOSFET

Anstiegszeit:: 12.49 ns

Werkspackungsmenge:: 2500

Unterkategorie:: MOSFETs

Typische Ausschaltverzögerungszeit:: 35.89 ns

Typische Einschaltverzögerungszeit:: 11.67 ns

Gewichtseinheit:: 0.002610 oz

Tags: DMN2028US, DMN2028, DMN202, DMN20, DMN2, DMN

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

DMN2028USS-13 Beschreibung

***p One Stop Global: Trans MOSFET N-CH 20V 9.8A Automotive 8-Pin SO T/R

***ark: MOSFET,N CHANNEL,20V,7.3A,SO8; Channel Type:N Channel; Drain Source Voltage Vds:20V; Continuous Drain Current Id:9.8A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:4.5V; Gate Source Threshold Voltage Max:1V RoHS Compliant: Yes

***nell: MOSFET,N CH,20V,9.8A,SO8; Transistor Polarity: N Channel; Continuous Drain Current Id: 9.8A; Drain Source Voltage Vds: 20V; On Resistance Rds(on): 0.011ohm; Rds(on) Test Voltage Vgs: 4.5V; Threshold Voltage Vgs: 1V; Power Dissipation Pd: 1.56W; Transistor Case Style: SOIC; No. of Pins: 8Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2019); Current Id Max: 9.8A; Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to +150°C; Voltage Vgs Max: 12V

***et: Trans MOSFET P-CH 20V 7.3A 8-Pin SOIC N T/R

***eco: P-CH MOSFET SO-8 20V 32MOHM @ 1.8V

***S: French Electronic Distributor since 1988

***Yang: Transistor MOSFET Array Dual N-CH 20V 8.9A 8-Pin SOIC T/R - Tape and Reel

***ure Electronics: Dual N-Channel 20 V 18.3 mOhm 4.9 nC HEXFET® Power Mosfet - SOIC-8

*** Stop Electro: Power Field-Effect Transistor, 8.9A I(D), N-Channel, Metal-oxide Semiconductor FET

***ark: MOSFET; Transistor Type:MOSFET; Transistor Polarity:Dual N Channel; Drain Source Voltage, Vds:20V; Continuous Drain Current, Id:8.9A; On Resistance, Rds(on):18.3mohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:8-SOIC ;RoHS Compliant: Yes

***ineon: Benefits: RoHS Compliant; Low RDS(on); Fully Characterized Avalanche Voltage and Current; Ultra-Low Gate Impedance; Dual N-Channel MOSFET

***nell: MOSFET, DUAL N-CH, 20V, 8.9A, SOIC-8; Transistor Polarity: Dual N Channel; Continuous Drain Current Id: 8.9A; Drain Source Voltage Vds: 20V; On Resistance Rds(on): 0.0146ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 2.5V; Power Dissipation Pd: 2W; Transistor Case Style: SOIC; No. of Pins: 8Pins; Operating Temperature Max: 150°C; Product Range: HEXFET Series; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018)

***trelec: Transistor Polarity = N-Channel / Configuration = Dual / Continuous Drain Current (Id) A = 8.9 / Drain-Source Voltage (Vds) V = 20 / ON Resistance (Rds(on)) mOhm = 18.3 / Gate-Source Voltage V = 20 / Fall Time ns = 3.6 / Rise Time ns = 12 / Turn-OFF Delay Time ns = 7.1 / Turn-ON Delay Time ns = 6 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 150 / Package Type = SO-8 / Pins = 8 / Mounting Type = SMD / MSL = Level-1 / Packaging = Tape & Reel / Power Dissipation (Pd) W = 2

***(Formerly Allied Electronics): IRF8910PBF Dual N-channel MOSFET Transistor; 10 A; 20 V; 8-Pin SOIC

***ure Electronics: Dual N-Channel 20 V 13.4 mOhm 7.4 nC HEXFET® Power Mosfet - SOIC-8

***et: Transistor MOSFET Array Dual N-CH 20V 10A 8-Pin SOIC Tube

***S.I.T. Europe - USA - Asia: Power Field-Effect Transistor, 10A I(D), 20V, 0.0134ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA

***ark: Transistor Polarity:n Channel; Drain Source Voltage Vds:20V; Continuous Drain Current Id:10A; On Resistance Rds(On):0.0107Ohm; Transistor Mounting:surface Mount; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:2.55V Rohs Compliant: Yes

***et Europe: Transistor MOSFET Array Dual N-CH 20V 9.5A 8-Pin SOIC T/R

***ure Electronics: DMG6898LSD Series 20 V 9.5 A Dual N-Channel Enhancement Mode Mosfet - SO-8

***ical: Trans MOSFET N-CH 20V 9.5A Automotive 8-Pin SO T/R

***ark: Mosfet, Dual, N-Ch, 20V, 9.5A Rohs Compliant: Yes

***des Inc SCT: N-Channel Mosfet, 20V VDS, 12±V VGS

***ment14 APAC: MOSFET, DUAL, N-CH, 20V, 9.5A;

***ure Electronics: Si5459DU Series 20 V 8 A 0.052 Ohm P-Channel MOSFET - PowerPAK® ChipFET

***C: MOSFET 20V 8.0A 10.9W 52mohm @ 4.5V

***et: Trans MOSFET P-CH 20V 6.7A 8-Pin PowerPAK ChipFET T/R

***ment14 APAC: P CHANNEL MOSFET, -20V, 8A; Transistor P; P CHANNEL MOSFET, -20V, 8A; Transistor Polarity:P Channel; Continuous Drain Current Id:-8A; Drain Source Voltage Vds:-20V; On Resistance Rds(on):52mohm; Rds(on) Test Voltage Vgs:-4.5V; Threshold Voltage Vgs:-1.4V; No. of Pins:8

***icroelectronics: P-channel 20 V, 0.0195 Ohm typ., 9 A STripFET H7 Power MOSFET in a SO-8 package

***r Electronics: Power Field-Effect Transistor, 9A I(D), 1-Element, P-Channel, Metal-oxide Semiconductor FET

***ure Electronics: STS9P2UH7: 20 V 0.018 Ohm 9 A P-Channel STripFET VII DeepGATE Power Mosfet

***enic: 20V 9A 2.7W 22.5m´Î@4.5V4.5A 1V@250Ã×A P Channel SOIC-8_150mil MOSFETs ROHS

DMN2028USS-13 Mehr Informationen

Diodes Inc. DMNxx MOSFETs: Diodes Inc. DMNxx MOSFETs are N-channel devices ideally suited for meeting the requirements of a variety of power management applications. DMNxx MOSFETs offer a variety of package options and a wide range of drain-source voltage values.

Market price

Teil #	Mfg.	Beschreibung	Aktie	Preis
DMN2028USS-13 DISTI # V72:2272_06698045	Zetex / Diodes Inc	Trans MOSFET N-CH 20V 9.8A Automotive 8-Pin SO T/R RoHS: Compliant	2500	1000:$0.2053 500:$0.2653 250:$0.2680 100:$0.2708 25:$0.4350 10:$0.4396 1:$0.5305
DMN2028USS-13 DISTI # DMN2028USS-13DICT-ND	Diodes Incorporated	MOSFET N-CH 20V 7.3A 8SO RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	2470In Stock	1000:$0.2772 500:$0.3508 100:$0.4687 10:$0.6160 1:$0.7300
DMN2028USS-13 DISTI # DMN2028USS-13DIDKR-ND	Diodes Incorporated	MOSFET N-CH 20V 7.3A 8SO RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	2470In Stock	1000:$0.2772 500:$0.3508 100:$0.4687 10:$0.6160 1:$0.7300
DMN2028USS-13 DISTI # DMN2028USS-13DITR-ND	Diodes Incorporated	MOSFET N-CH 20V 7.3A 8SO RoHS: Compliant Min Qty: 2500 Container: Tape & Reel (TR)	Temporarily Out of Stock	2500:$0.2477
DMN2028USS-13 DISTI # 26571865	Zetex / Diodes Inc	Trans MOSFET N-CH 20V 9.8A Automotive 8-Pin SO T/R RoHS: Compliant	7500	2500:$0.1625
DMN2028USS-13 DISTI # 30737740	Zetex / Diodes Inc	Trans MOSFET N-CH 20V 9.8A Automotive 8-Pin SO T/R RoHS: Compliant	2500	1000:$0.2053 500:$0.2653 250:$0.2680 100:$0.2708 39:$0.4350
DMN2028USS-13 DISTI # DMN2028USS-13	Diodes Incorporated	Trans MOSFET N-CH 20V 9.8A 8-Pin SO T/R - Tape and Reel (Alt: DMN2028USS-13) RoHS: Not Compliant Min Qty: 2500 Container: Reel	Americas - 0	2500:$0.1899 5000:$0.1799 10000:$0.1719 15000:$0.1639 25000:$0.1599
DMN2028USS-13 DISTI # DMN2028USS-13	Diodes Incorporated	Trans MOSFET N-CH 20V 9.8A 8-Pin SO T/R (Alt: DMN2028USS-13) RoHS: Compliant Min Qty: 2500 Container: Tape and Reel	Europe - 0	2500:€0.1629 5000:€0.1619 10000:€0.1619 15000:€0.1619 25000:€0.1609
DMN2028USS-13 DISTI # 27T2699	Diodes Incorporated	MOSFET,N CHANNEL,20V,7.3A,SO8,Transistor Polarity:N Channel,Continuous Drain Current Id:9.8A,Drain Source Voltage Vds:20V,On Resistance Rds(on):0.011ohm,Rds(on) Test Voltage Vgs:4.5V,Threshold Voltage Vgs:1V,No. of Pins:8Pins RoHS Compliant: Yes	9868	1:$0.5700 10:$0.4700 25:$0.4090 50:$0.3480 100:$0.2870 250:$0.2650 500:$0.2440 1000:$0.2220
DMN2028USS-13 DISTI # 70550765	Diodes Incorporated	20V N-Channel Enhancement MOSFET SOIC8 RoHS: Compliant	0	100:$0.3600 300:$0.3200 1200:$0.2800 2500:$0.2600
DMN2028USS-13 DISTI # 522-DMN2028USS-13	Diodes Incorporated	MOSFET N-Ch FET VDSS 20V VGSS 20V ID 9.8A RoHS: Compliant	2471	1:$0.5700 10:$0.4700 100:$0.2870 1000:$0.2220 2500:$0.1890
DMN2028USS-13 DISTI # DMN2028USS-13	Diodes Incorporated	Transistor: N-MOSFET,unipolar,20V,7.3A,12.5W,SO8	2311	1:$0.5500 5:$0.2800 25:$0.2300 100:$0.2000 500:$0.1900
DMN2028USS-13 DISTI # C1S205700141381	Diodes Incorporated	Trans MOSFET N-CH 20V 9.8A Automotive 8-Pin SO T/R RoHS: Compliant	2500	250:$0.2680 100:$0.2708 25:$0.4350 10:$0.4396
DMN2028USS-13 DISTI # C1S205700122678	Diodes Incorporated	Trans MOSFET N-CH 20V 9.8A Automotive 8-Pin SO T/R RoHS: Compliant	2500	2500:$0.2390
DMN2028USS-13 DISTI # 1863719	Diodes Incorporated	MOSFET,N CH,20V,9.8A,SO8 RoHS: Compliant	12488	5:£0.4230 25:£0.3970 100:£0.2280 250:£0.2020 500:£0.1760
DMN2028USS-13 DISTI # 1863719	Diodes Incorporated	MOSFET,N CH,20V,9.8A,SO8 RoHS: Compliant	9868	1:$0.9020 10:$0.7440 100:$0.4550 1000:$0.3520 2500:$0.3000 10000:$0.2790 25000:$0.2650 50000:$0.2610

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Verfügbarkeit

Aktie:: Available
Auf Bestellung:: 1986
Menge eingeben:

Der aktuelle Preis von DMN2028USS-13 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]

Referenzpreis (USD)

Menge
Stückpreis
ext. Preis

1: ~~0,56 $~~; ~~0,56 $~~

10: ~~0,47 $~~; ~~4,70 $~~

100: ~~0,29 $~~; ~~28,70 $~~

1000: ~~0,22 $~~; ~~222,00 $~~

Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.

Beginnen mit

DMN2028US 3
DMN2028 10
DMN202 45
DMN20 168
DMN2 260
DMN 1106

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DMN2028USS-13

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes