DMN2028USS-13 vs DMN2028USS vs DMN2028USS-13-F

 
PartNumberDMN2028USS-13DMN2028USSDMN2028USS-13-F
DescriptionMOSFET N-Ch FET VDSS 20V VGSS 20V ID 9.8A
ManufacturerDiodes Incorporated--
Product CategoryMOSFET--
RoHSY--
TechnologySi--
Mounting StyleSMD/SMT--
Package / CaseSO-8--
Number of Channels1 Channel--
Transistor PolarityN-Channel--
Vds Drain Source Breakdown Voltage20 V--
Id Continuous Drain Current9.8 A--
Rds On Drain Source Resistance20 mOhms--
Vgs Gate Source Voltage12 V--
Qg Gate Charge11.6 nC--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 150 C--
Pd Power Dissipation1.56 W--
ConfigurationSingle--
Channel ModeEnhancement--
PackagingReel--
SeriesDMN2028--
Transistor Type1 N-Channel--
TypeN-Channel Enhancement Mode MOSFET--
BrandDiodes Incorporated--
Forward Transconductance Min16 S--
Fall Time12.33 ns--
Product TypeMOSFET--
Rise Time12.49 ns--
Factory Pack Quantity2500--
SubcategoryMOSFETs--
Typical Turn Off Delay Time35.89 ns--
Typical Turn On Delay Time11.67 ns--
Unit Weight0.002610 oz--
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