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BSM25GP120

BSM25GP120
Mfr. #:
BSM25GP120
Hersteller:
Infineon Technologies
Beschreibung:
IGBT Modules 1200V 25A PIM
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
BSM25GP120 Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Produkteigenschaft
Attributwert
Hersteller:
Infineon
Produktkategorie:
IGBT-Module
RoHS:
Y
Produkt:
IGBT Silizium Module
Aufbau:
Array 7
Kollektor- Emitterspannung VCEO Max:
1600 V
Kollektor-Emitter-Sättigungsspannung:
2.55 V
Kontinuierlicher Kollektorstrom bei 25 C:
45 A
Gate-Emitter-Leckstrom:
300 nA
Pd - Verlustleistung:
230 W
Paket / Koffer:
EconoPIM2
Minimale Betriebstemperatur:
- 40 C
Maximale Betriebstemperatur:
+ 125 C
Verpackung:
Tablett
Höhe:
17 mm
Länge:
107.5 mm
Breite:
45 mm
Marke:
Infineon-Technologien
Montageart:
Chassishalterung
Maximale Gate-Emitter-Spannung:
20 V
Produktart:
IGBT-Module
Werkspackungsmenge:
10
Unterkategorie:
IGBTs
Teil # Aliase:
BSM25GP120BOSA1 SP000095940
Gewichtseinheit:
6.349313 oz
Tags
BSM25GP1, BSM25GP, BSM25G, BSM25, BSM2, BSM
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***omponent
Large Current Speed Switching / Darlington / Building Block Transistors
***ser
IGBT - Standard Modules 1200V, 25A, PIM
Teil # Mfg. Beschreibung Aktie Preis
BSM25GP120BOSA1
DISTI # BSM25GP120BOSA1-ND		Infineon Technologies AGIGBT 2 LOW POWER ECONO2-5
RoHS: Compliant
Min Qty: 10
Container: Tray		Limited Supply - Call
  • 10:$109.7240
BSM25GP120BOSA1
DISTI # BSM25GP120BOSA1		Infineon Technologies AGTrans IGBT Module N-CH 1.2kV 25A nom 230W 24-Pin EconoPIM2 107.5x45mm - Trays (Alt: BSM25GP120BOSA1)
RoHS: Compliant
Min Qty: 10
Container: Tray		Americas - 0
  • 10:$102.3900
  • 20:$98.6900
  • 40:$95.0900
  • 60:$91.8900
  • 100:$90.2900
BSM25GP120BOSA1
DISTI # SP000095940		Infineon Technologies AGTrans IGBT Module N-CH 1.2kV 25A nom 230W 24-Pin EconoPIM2 107.5x45mm (Alt: SP000095940)
RoHS: Compliant
Min Qty: 1		Europe - 0
  • 1:€97.3900
  • 10:€94.4900
  • 25:€93.4900
  • 50:€88.7900
  • 100:€87.2900
  • 500:€86.2900
  • 1000:€85.0900
BSM25GP120
DISTI # 641-BSM25GP120		Infineon Technologies AGIGBT Modules 1200V 25A PIM
RoHS: Compliant		0
  • 1:$113.7400
  • 5:$111.6500
  • 10:$106.6200
  • 25:$103.0700
BSM25GP120_B2
DISTI # 641-BSM25GP120_B2		Infineon Technologies AGIGBT Modules IGBT 1600V 25A0
    BSM25GP120SiemensInsulated Gate Bipolar Transistor, 45A I(C), 1200V V(BR)CES, N-Channel
    RoHS: Not Compliant    		Europe - 19
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      Verfügbarkeit
      Aktie:
      32
      Auf Bestellung:
      2015
      Menge eingeben:
      Der aktuelle Preis von BSM25GP120 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
      Referenzpreis (USD)
      Menge
      Stückpreis
      ext. Preis
      1
      113,74 $
      113,74 $
      5
      111,65 $
      558,25 $
      10
      106,62 $
      1 066,20 $
      25
      103,07 $
      2 576,75 $
      100
      95,97 $
      9 597,00 $
      Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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