 |  | | |
| PartNumber | BSM250D17P2E004 | BSM252F | BSM254F |
| Description | Discrete Semiconductor Modules 1700V Vdss; 250A Id SiC Pwr Module | Power Field-Effect Transistor, 1-Element, Metal-oxide Semiconductor FET | |
| Manufacturer | ROHM Semiconductor | - | - |
| Product Category | Discrete Semiconductor Modules | - | - |
| RoHS | Y | - | - |
| Product | Power Semiconductor Modules | - | - |
| Type | Half Bridge Module | - | - |
| Vgs Gate Source Voltage | - 6 V, 22 V | - | - |
| Mounting Style | Screw Mount | - | - |
| Package / Case | Module | - | - |
| Minimum Operating Temperature | - 40 C | - | - |
| Maximum Operating Temperature | + 150 C | - | - |
| Series | BSMx | - | - |
| Packaging | Tray | - | - |
| Configuration | Half-Bridge | - | - |
| Brand | ROHM Semiconductor | - | - |
| Transistor Polarity | N-Channel | - | - |
| Typical Delay Time | 55 ns | - | - |
| Fall Time | 70 ns | - | - |
| Id Continuous Drain Current | 250 A | - | - |
| Pd Power Dissipation | 1800 W | - | - |
| Product Type | Discrete Semiconductor Modules | - | - |
| Rise Time | 55 ns | - | - |
| Factory Pack Quantity | 4 | - | - |
| Subcategory | Discrete Semiconductor Modules | - | - |
| Typical Turn Off Delay Time | 195 ns | - | - |
| Typical Turn On Delay Time | 55 ns | - | - |
| Vds Drain Source Breakdown Voltage | 1700 V | - | - |
| Vgs th Gate Source Threshold Voltage | 1.6 V | - | - |
| Hersteller | Teil # | Beschreibung | RFQ |
|---|---|---|---|
| BSM250D17P2E004 | Discrete Semiconductor Modules 1700V Vdss; 250A Id SiC Pwr Module | ||
| BSM25GD120DLCE3224BOSA1 | Insulated Gate Bipolar Transistor, 50A I(C), 1200V V(BR)CES, N-Channel | ||
| BSM25GD120DLC3224 | Insulated Gate Bipolar Transistor, 50A I(C), 1200V V(BR)CES, N-Channel | ||
| BSM254FA10 | Neu und Original | ||
| BSM252F | Power Field-Effect Transistor, 1-Element, Metal-oxide Semiconductor FET | ||
| BSM254F | Neu und Original | ||
| BSM25GAL120D | Neu und Original | ||
| BSM25GAL120DN2 | Neu und Original | ||
| BSM25GB100D | Insulated Gate Bipolar Transistor, 25A I(C), 1000V V(BR)CES, N-Channel | ||
| BSM25GB120D | Neu und Original | ||
| BSM25GB120DN2 | IGBT Modules 1200V 25A DUAL | ||
| BSM25GD100D | Neu und Original | ||
| BSM25GD101D | Neu und Original | ||
| BSM25GD120D | Neu und Original | ||
| BSM25GD120D2 | Neu und Original | ||
| BSM25GD120DLC | Neu und Original | ||
| BSM25GD120DLCE3224 | Trans IGBT Module N-CH 1.2kV 25A nom 200W 17-Pin EconoPACK 2A 107.5x45mm T/R (Alt: SP000100397) | ||
| BSM25GD120DLC_E3224 | Neu und Original | ||
| BSM25GD120DN | Neu und Original | ||
| BSM25GD120DN1 | Neu und Original | ||
| BSM25GD120DN12 | Neu und Original | ||
| BSM25GD120DN2E | Neu und Original | ||
| BSM25GD120DN2E224 | Neu und Original | ||
| BSM25GD120DN2_E3224 | Neu und Original | ||
| BSM25GD120ND | Neu und Original | ||
| BSM25GD120ND2 | Neu und Original | ||
| BSM25GP120-B2 | Neu und Original | ||
| BSM25GP120B2 | Neu und Original | ||
| BSM25GP120DN2 | Neu und Original | ||
| BSM25GP60 | Neu und Original | ||
| BSM250D17P2E004 | HALF BRIDGE MODULE CONSISTING OF | ||
| BSM25GD120DN2E3224 | IGBT Modules N-CH 1.2KV 35A | ||
| BSM25GD120DN2 | IGBT Modules 1200V 25A FL BRIDGE | ||
| BSM25GP120 | IGBT Modules 1200V 25A PIM | ||
Infineon Technologies |
BSM25GP120 | IGBT Modules 1200V 25A PIM | |
| BSM25GD120DN2E3224 | IGBT Modules N-CH 1.2KV 35A | ||
| BSM25GD120DN2 | IGBT Modules 1200V 25A FL BRIDGE | ||
| BSM25GD120DN2BOSA1 | 35 A, 1200 V, N-CHANNEL IGBT | ||
| BSM25GD120DN2E3224BOSA1 | IGBT 2 LOW POWER ECONO2-2 | ||
| BSM25GP120BOSA1 | 45 A, 1200 V, N-CHANNEL IGBT |