BSM25GB120DN2

BSM25GB120DN2
Mfr. #:
BSM25GB120DN2
Hersteller:
Rochester Electronics, LLC
Beschreibung:
IGBT Modules 1200V 25A DUAL
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
BSM25GB120DN2 Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Produkteigenschaft
Attributwert
Tags
BSM25GB, BSM25G, BSM25, BSM2, BSM
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ser
IGBT - Standard Modules 1200V 25A DUAL
Teil # Mfg. Beschreibung Aktie Preis
BSM 25 GB 120 DN2
DISTI # BSM25GB120DN2
Infineon Technologies AGTrans IGBT Module N-CH 1.2kV 38A 7-Pin 34mm - Bulk (Alt: BSM25GB120DN2)
RoHS: Not Compliant
Min Qty: 11
Container: Bulk
Americas - 0
  • 110:$30.4900
  • 55:$30.9900
  • 33:$32.0900
  • 22:$33.2900
  • 11:$34.5900
BSM25GB120DN2
DISTI # 641-BSM25GB120DN2
Infineon Technologies AGIGBT Modules 1200V 25A DUAL
RoHS: Not compliant
0
    BSM25GB120DN2Infineon Technologies AGInsulated Gate Bipolar Transistor, 25A I(C), 1200V V(BR)CES, N-Channel
    RoHS: Compliant
    43
    • 1000:$31.6300
    • 500:$33.3000
    • 100:$34.6700
    • 25:$36.1500
    • 1:$38.9300
    BSM25GB120DN2Eupec Gmbh & Co KgInsulated Gate Bipolar Transistor, 25A I(C), 1200V V(BR)CES, N-Channel
    RoHS: Not Compliant
    21
      Bild Teil # Beschreibung
      BSM25GP120

      Mfr.#: BSM25GP120

      OMO.#: OMO-BSM25GP120

      IGBT Modules 1200V 25A PIM
      BSM25GD120DN2E3224

      Mfr.#: BSM25GD120DN2E3224

      OMO.#: OMO-BSM25GD120DN2E3224

      IGBT Modules N-CH 1.2KV 35A
      BSM25GD120DLCE3224BOSA1

      Mfr.#: BSM25GD120DLCE3224BOSA1

      OMO.#: OMO-BSM25GD120DLCE3224BOSA1-1190

      Insulated Gate Bipolar Transistor, 50A I(C), 1200V V(BR)CES, N-Channel
      BSM25GD120DLC3224

      Mfr.#: BSM25GD120DLC3224

      OMO.#: OMO-BSM25GD120DLC3224-1190

      Insulated Gate Bipolar Transistor, 50A I(C), 1200V V(BR)CES, N-Channel
      BSM25GD120D

      Mfr.#: BSM25GD120D

      OMO.#: OMO-BSM25GD120D-1190

      Neu und Original
      BSM25GD120D2

      Mfr.#: BSM25GD120D2

      OMO.#: OMO-BSM25GD120D2-1190

      Neu und Original
      BSM25GD120DLC_E3224

      Mfr.#: BSM25GD120DLC_E3224

      OMO.#: OMO-BSM25GD120DLC-E3224-1190

      Neu und Original
      BSM25GD120DN2BOSA1

      Mfr.#: BSM25GD120DN2BOSA1

      OMO.#: OMO-BSM25GD120DN2BOSA1-INFINEON-TECHNOLOGIES

      35 A, 1200 V, N-CHANNEL IGBT
      BSM25GD120DN2E3224BOSA1

      Mfr.#: BSM25GD120DN2E3224BOSA1

      OMO.#: OMO-BSM25GD120DN2E3224BOSA1-INFINEON-TECHNOLOGIES

      IGBT 2 LOW POWER ECONO2-2
      BSM25GD120DN2E3224

      Mfr.#: BSM25GD120DN2E3224

      OMO.#: OMO-BSM25GD120DN2E3224-125

      IGBT Modules N-CH 1.2KV 35A
      Verfügbarkeit
      Aktie:
      Available
      Auf Bestellung:
      3500
      Menge eingeben:
      Der aktuelle Preis von BSM25GB120DN2 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
      Referenzpreis (USD)
      Menge
      Stückpreis
      ext. Preis
      1
      47,44 $
      47,44 $
      10
      45,07 $
      450,73 $
      100
      42,70 $
      4 270,05 $
      500
      40,33 $
      20 164,15 $
      1000
      37,96 $
      37 956,00 $
      Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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