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FPF2G120BF07AS

FPF2G120BF07AS
Mfr. #:
FPF2G120BF07AS
Hersteller:
ON Semiconductor / Fairchild
Beschreibung:
IGBT Modules High Power Module
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
FPF2G120BF07AS Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Mehr Informationen:
FPF2G120BF07AS Mehr Informationen
Produkteigenschaft
Attributwert
Hersteller:
ON Semiconductor
Produktkategorie:
IGBT-Module
RoHS:
Y
Produkt:
IGBT Silizium Module
Aufbau:
Verdreifachen
Kollektor- Emitterspannung VCEO Max:
650 V
Kollektor-Emitter-Sättigungsspannung:
1.55 V
Kontinuierlicher Kollektorstrom bei 25 C:
40 A
Gate-Emitter-Leckstrom:
2 uA
Pd - Verlustleistung:
98 W, 140 W, 156 W
Paket / Koffer:
F2
Minimale Betriebstemperatur:
- 40 C
Maximale Betriebstemperatur:
+ 150 C
Verpackung:
Tablett
Serie:
FPF2G120BF07AS
Marke:
ON Semiconductor / Fairchild
Montageart:
SMD/SMT
Maximale Gate-Emitter-Spannung:
20 V
Produktart:
IGBT-Module
Werkspackungsmenge:
70
Unterkategorie:
IGBTs
Gewichtseinheit:
1.587328 oz
Tags
FPF2G, FPF2, FPF
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***emi
Power Integrated Module (PIM), F2, SiC Diode + IGBT, 650 V, 40 A
***ical
Trans IGBT Module N=-CH 650V 40A 156000mW 17-Pin Case F2 Tray
***ark
HPM(High Power Module) - HPM F2 PKG, 32LD, SOLDERING TERMINAL, 3CH BOOST MODULE
***rchild Semiconductor
The FPF2G120BF07AS is the 3ch boost topology which is providing an optimized solution for the multi-string solar application.And the integrated high speed field stop IGBTs and SiC diodes are providing lower conduction and switching losses. Furthermore, the screw clamp provides a fast and reliable mounting method.
Wide Bandgap SiC Devices
ON Semiconductor Wide Bandgap Silicon Carbide (SiC) Devices incorporate a completely new technology that provides superior switching performance and higher reliability compared to silicon. The system benefits include the highest efficiency, faster-operating frequency, increased power density, reduced EMI, and reduced system size and cost. ON Semiconductor’s SiC portfolio includes 650V and 1200V diodes, 650V and 1200V IGBT and SiC diode Power Integrated Modules (PIMs), 1200V MOSFETs and SiC MOSFET drivers, and AEC-Q100 qualified devices.
SiC Diodes and IGBT Power Integrated Modules
ON Semiconductor Silicon Carbide (SiC) Diodes and IGBT Power Integrated Modules (PIM) provide lower conduction and switching losses. These integrated high-speed field stop IGBT and SiC diodes feature built-in Negative Temperature Co-efficient (NTC) for temperature monitoring. The SiC diodes and IGBT PIMs are optimized for solar inverters, UPS, or power stages that need a more compact design.
FPF2G120BF07AS 3-Channel Boost Module
ON Semiconductor FPF2G120BF07AS 3-Channel Boost Module provides an optimized solution for the multi-string solar application. The integrated high speed field stop IGBTs and SiC diodes provide lower conduction and switching losses. And, the screw clamp provides a fast and reliable mounting method.Learn More
Teil # Mfg. Beschreibung Aktie Preis
FPF2G120BF07AS
DISTI # V99:2348_14141233		ON SemiconductorTrans IGBT Module N-CH 650V 40A 156000mW 17-Pin Case F2 Tray70
  • 100:$93.6600
  • 25:$98.4599
  • 10:$101.4599
  • 5:$104.1600
  • 1:$105.2000
FPF2G120BF07ASP
DISTI # V99:2348_14141234		ON SemiconductorHPM(HIGH POWER MODULE)70
  • 25:$102.0699
  • 10:$105.1900
  • 5:$108.7000
  • 1:$109.0800
FPF2G120BF07ASP
DISTI # FPF2G120BF07ASP-ND		ON SemiconductorIC LOAD SWITCH
RoHS: Compliant
Min Qty: 1
Container: Tray		70In Stock
  • 10:$103.6350
  • 1:$109.2800
FPF2G120BF07AS
DISTI # FPF2G120BF07AS-ND		ON SemiconductorIC LOAD SWITCH
RoHS: Compliant
Min Qty: 1
Container: Tray		65In Stock
  • 10:$99.9600
  • 1:$105.4000
FPF2G120BF07AS
DISTI # 25887478		ON SemiconductorTrans IGBT Module N-CH 650V 40A 156000mW 17-Pin Case F2 Tray70
  • 1:$105.2000
FPF2G120BF07ASP
DISTI # 31085825		ON SemiconductorHPM(HIGH POWER MODULE)70
  • 1:$109.0800
FPF2G120BF07AS
DISTI # FPF2G120BF07AS		ON SemiconductorTrans IGBT Module N-CH 650V 40A 17-Pin Case F2 (Alt: FPF2G120BF07AS)
RoHS: Compliant
Min Qty: 1
Container: Case		Europe - 0
  • 1000:€78.7900
  • 500:€79.2900
  • 100:€79.8900
  • 50:€80.3900
  • 25:€80.9900
  • 10:€81.4900
  • 1:€82.0900
FPF2G120BF07AS
DISTI # FPF2G120BF07AS		ON SemiconductorTrans IGBT Module N-CH 650V 40A 17-Pin Case F2 - Bulk (Alt: FPF2G120BF07AS)
Min Qty: 4
Container: Bulk		Americas - 0
  • 40:$93.1900
  • 20:$95.5900
  • 12:$96.7900
  • 8:$98.0900
  • 4:$98.6900
FPF2G120BF07AS
DISTI # FPF2G120BF07AS		ON SemiconductorTrans IGBT Module N-CH 650V 40A 17-Pin Case F2 - Trays (Alt: FPF2G120BF07AS)
RoHS: Compliant
Min Qty: 70
Container: Tray		Americas - 0
  • 700:$81.8900
  • 420:$83.8900
  • 280:$85.9900
  • 140:$88.2900
  • 70:$89.3900
FPF2G120BF07ASP
DISTI # FPF2G120BF07ASP		ON SemiconductorTrans IGBT Module N-CH 650V 40A 17-Pin Case F2 - Trays (Alt: FPF2G120BF07ASP)
RoHS: Compliant
Min Qty: 70
Container: Tray		Americas - 0
  • 700:$84.8900
  • 420:$86.9900
  • 280:$89.1900
  • 140:$91.4900
  • 70:$92.6900
FPF2G120BF07ASP
DISTI # FPF2G120BF07ASP		ON SemiconductorTrans IGBT Module N-CH 650V 40A 17-Pin Case F2 (Alt: FPF2G120BF07ASP)
RoHS: Compliant
Min Qty: 1
Container: Case		Europe - 0
  • 1000:€81.6900
  • 500:€82.1900
  • 100:€82.7900
  • 50:€83.3900
  • 25:€83.8900
  • 10:€84.4900
  • 1:€85.0900
FPF2G120BF07AS
DISTI # 512-FPF2G120BF07AS		ON SemiconductorIGBT Modules High Power Module
RoHS: Compliant		11
  • 1:$108.8000
  • 5:$106.8100
  • 10:$102.0000
FPF2G120BF07ASP
DISTI # 512-FPF2G120BF07ASP		ON SemiconductorIGBT Modules High Power Module
RoHS: Compliant		70
  • 1:$112.8000
  • 5:$110.7300
  • 10:$105.7500
  • 25:$102.2200
FPF2G120BF07ASFairchild Semiconductor CorporationInsulated Gate Bipolar Transistor
RoHS: Compliant		140
  • 1000:$99.4200
  • 500:$104.6500
  • 100:$108.9600
  • 25:$113.6200
  • 1:$122.3600
Bild Teil # Beschreibung
FPF2G120BF07ASP

Mfr.#: FPF2G120BF07ASP

OMO.#: OMO-FPF2G120BF07ASP

 IGBT Modules High Power Module
FPF2G120BF07AS

Mfr.#: FPF2G120BF07AS

OMO.#: OMO-FPF2G120BF07AS

 IGBT Modules High Power Module
FPF2G120BF07AS

Mfr.#: FPF2G120BF07AS

OMO.#: OMO-FPF2G120BF07AS-ON-SEMICONDUCTOR

 IC LOAD SWITCH
FPF2G120BF07ASP

Mfr.#: FPF2G120BF07ASP

OMO.#: OMO-FPF2G120BF07ASP-ON-SEMICONDUCTOR

 IC LOAD SWITCH
Verfügbarkeit
Aktie:
11
Auf Bestellung:
1994
Menge eingeben:
Der aktuelle Preis von FPF2G120BF07AS dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
Referenzpreis (USD)
Menge
Stückpreis
ext. Preis
1
108,80 $
108,80 $
5
106,81 $
534,05 $
10
102,00 $
1 020,00 $
Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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