PartNumber | FPF2G120BF07ASP | FPF2G120BF07AS |
Description | IGBT Modules High Power Module | IGBT Modules High Power Module |
Manufacturer | ON Semiconductor | ON Semiconductor |
Product Category | IGBT Modules | IGBT Modules |
RoHS | Y | Y |
Product | IGBT Silicon Modules | IGBT Silicon Modules |
Configuration | Triple | Triple |
Collector Emitter Voltage VCEO Max | 650 V | 650 V |
Collector Emitter Saturation Voltage | 1.55 V | 1.55 V |
Continuous Collector Current at 25 C | 40 A | 40 A |
Gate Emitter Leakage Current | 2 uA | 2 uA |
Pd Power Dissipation | 156 W | 98 W, 140 W, 156 W |
Package / Case | F2 | F2 |
Minimum Operating Temperature | - 40 C | - 40 C |
Maximum Operating Temperature | + 150 C | + 150 C |
Packaging | Tray | Tray |
Series | FPF2G120BF07ASP | FPF2G120BF07AS |
Brand | ON Semiconductor / Fairchild | ON Semiconductor / Fairchild |
Mounting Style | Chassis Mount | SMD/SMT |
Maximum Gate Emitter Voltage | 20 V | 20 V |
Product Type | IGBT Modules | IGBT Modules |
Factory Pack Quantity | 70 | 70 |
Subcategory | IGBTs | IGBTs |
Unit Weight | 1.587328 oz | 1.587328 oz |