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IGW30N60H3

IGW30N60H3
Mfr. #:
IGW30N60H3
Hersteller:
Infineon Technologies
Beschreibung:
IGBT Transistors 600V HI SPEED SW IGBT
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
IGW30N60H3 Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Produkteigenschaft
Attributwert
Hersteller
INFINEON
Produktkategorie
IGBTs - Single
Serie
IGW30N60
Verpackung
Rohr
Teil-Aliasnamen
IGW30N60H3FKSA1 IGW30N60H3XK SP000852242
Montageart
Durchgangsloch
Paket-Koffer
PG-TO-247-3
Pd-Verlustleistung
187 W
Kollektor-Emitter-Spannung-VCEO-Max
600 V
Kollektor-Emitter-Sättigungsspannung
2.4 V
Kontinuierlicher Kollektorstrom-bei-25-C
60 A
Gate-Emitter-Leckstrom
100 nA
Maximale Gate-Emitter-Spannung
20 V
Kontinuierlicher Kollektor-Strom-Ic-Max
30 A
Tags
IGW30N60H, IGW30N60, IGW30N6, IGW30N, IGW3, IGW
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***Components
In a Tube of 30, Infineon IGW30N60H3FKSA1 IGBT, 60 A 600 V, 3-Pin TO-247
***ical
Trans IGBT Chip N=-CH 600V 60A 187000mW 3-Pin(3+Tab) TO-247 Tube
***p One Stop Japan
Trans IGBT Chip N-CH 600V 60A 3-Pin(3+Tab) TO-247 Tube
***et
Trans IGBT Chip N-CH 600V 60A 3-Pin(3+Tab) TO-247
***et Europe
Trans IGBT Chip N-CH 600V 60A 3-Pin TO-247 Tube
***ronik
IGBT 600V 60A 2.40V TO247-3
***i-Key
IGBT 600V 60A 187W TO247-3
***ark
Transistor, Igbt, 600V, 60A, To-247; Dc Collector Current:60A; Collector Emitter Saturation Voltage Vce(On):1.95V; Power Dissipation Pd:187W; Collector Emitter Voltage V(Br)Ceo:600V; Transistor Case Style:to-247; No. Of Pins:3Pins; Rohs Compliant: Yes
***ment14 APAC
Prices include import duty and tax. TRANSISTOR, IGBT, 600V, 60A, TO-247; DC Collector Current:60A; Collector Emitter Saturation Voltage Vce(on):1.95V; Power Dissipation Pd:187W; Collector Emitter Voltage V(br)ceo:600V; Transistor Case Style:TO-247; No. of Pins:3Pins; Operating Temperature Max:175°C; Product Range:TRENCHSTOP™ Series; Automotive Qualification Standard:-; MSL:-; SVHC:No SVHC (27-Jun-2018)
***nell
TRANSISTOR, IGBT, 600V, 60A, TO-247; Corrente di Collettore CC:60A; Tensione Saturaz Collettore-Emettitore Vce(on):1.95V; Dissipazione di Potenza Pd:187W; Tensione Collettore-Emettitore V(br)ceo:600V; Modello Case Transistor:TO-247; No. di Pin:3Pin; Temperatura di Esercizio Max:175°C; Gamma Prodotti:TRENCHSTOP™ Series; Standard di Qualifica Automotive:-; Livello di Sensibilità all'Umidità (MSL):-; Sostanze Estremamente Preoccupanti (SVHC):No SVHC (27-Jun-2018)
***ineon
Infineons high speed devices are used to reduce the size of the active components (25kHz --> 70kHz). Infineons HighSpeed 3 family provides the best compromise between switching and conduction losses. The key feature of this family is a MOSFET-like turn-off switching behavior, leading to low turn off losses. | Summary of Features: Designed specifically to replace planar MOSFETs in applications switching at frequencies below 70kHz; Low switching losses for high efficiency; Excellent V ce(sat) behavior thanks to the famous Infineon TRENCHSTOP technology; Fast switching behavior with low EMI emissions; Optimized diode for target applications, meaning further improvement in switching losses; Low gate resistor selection possible (down to 5) whilst maintaining excellent switching behaviour; Short circuit capability; Offering T j(max) of 175C; Packaged with and without freewheeling diode for increased design freedom | Benefits: Excellent cost/performance; Low switching and conduction losses; Very good EMI behavior; A small gate resistor for reduced delay time and voltage overshoot; Smaller die sizes -> smaller packages; Best-in-class IGBT efficiency and EMI behavior | Target Applications: Welding Inverters; Solar Inverters; UPS; All hard switching applications
Teil # Mfg. Beschreibung Aktie Preis
IGW30N60H3FKSA1
DISTI # 24580267		Infineon Technologies AGTrans IGBT Chip N-CH 600V 60A 3-Pin(3+Tab) TO-247 Tube
RoHS: Compliant		189
  • 7:$1.4517
IGW30N60H3
DISTI # 30577650		Infineon Technologies AGTrans IGBT Chip N-CH 600V 60A 3-Pin(3+Tab) TO-247
RoHS: Compliant		120
  • 100:$2.5118
  • 50:$2.7157
  • 10:$3.3533
  • 5:$5.2530
IGW30N60H3FKSA1
DISTI # 26197177		Infineon Technologies AGTrans IGBT Chip N-CH 600V 60A 3-Pin(3+Tab) TO-247 Tube
RoHS: Compliant		42
  • 4:$1.7430
IGW30N60H3FKSA1
DISTI # V99:2348_06377101		Infineon Technologies AGTrans IGBT Chip N-CH 600V 60A 3-Pin(3+Tab) TO-247 Tube
RoHS: Compliant		42
  • 1:$1.7430
IGW30N60H3FKSA1
DISTI # V36:1790_06377101		Infineon Technologies AGTrans IGBT Chip N-CH 600V 60A 3-Pin(3+Tab) TO-247 Tube
RoHS: Compliant		0
  • 240:$1.5240
IGW30N60H3
DISTI # SP000852242		Infineon Technologies AGTrans IGBT Chip N-CH 600V 60A 3-Pin TO-247 Tube (Alt: SP000852242)
Min Qty: 1
Container: Tube		Europe - 103
    IGW30N60H3
    DISTI # IGW30N60H3FKSA1    		Infineon Technologies AGTrans IGBT Chip N-CH 600V 60A 3-Pin TO-247 Tube - Rail/Tube (Alt: IGW30N60H3FKSA1)
    RoHS: Compliant
    Min Qty: 240
    Container: Tube    		Americas - 0
      IGW30N60H3
      DISTI # IGW30N60H3      		Infineon Technologies AGTrans IGBT Chip N-CH 600V 60A 3-Pin TO-247 Tube - Bulk (Alt: IGW30N60H3)
      Min Qty: 191
      Container: Bulk      		Americas - 0
        IGW30N60H3FKSA1
        DISTI # 13AC9001        		Infineon Technologies AGTRANSISTOR, IGBT, 600V, 60A, TO-247,DC Collector Current:60A,Collector Emitter Saturation Voltage Vce(on):1.95V,Power Dissipation Pd:187W,Collector Emitter Voltage V(br)ceo:600V,Transistor Case Style:TO-247,No. of Pins:3Pins,RoHS Compliant: Yes
        RoHS: Compliant        		488
        • 1:$1.3400
        • 10:$1.3400
        • 25:$1.3400
        • 50:$1.3400
        • 100:$1.3400
        • 250:$1.3400
        • 500:$1.3400
        IGW30N60H3
        DISTI # 726-IGW30N60H3        		Infineon Technologies AGIGBT Transistors 600V HI SPEED SW IGBT
        RoHS: Compliant        		337
        • 1:$3.4700
        • 10:$2.9500
        • 100:$2.5500
        • 250:$2.4200
        • 500:$2.1700
        IGW30N60H3Infineon Technologies AGInsulated Gate Bipolar Transistor, 60A I(C), 600V V(BR)CES, N-Channel
        RoHS: Compliant        		20
        • 1000:$1.7300
        • 500:$1.8200
        • 100:$1.8900
        • 25:$1.9800
        • 1:$2.1300
        IGW30N60H3FKSA1Infineon Technologies AGInsulated Gate Bipolar Transistor, 60A I(C), 600V V(BR)CES, N-Channel
        RoHS: Compliant        		1680
        • 1000:$1.4900
        • 500:$1.5700
        • 100:$1.6300
        • 25:$1.7000
        • 1:$1.8300
        IGW30N60H3FKSA1
        DISTI # 1107737        		Infineon Technologies AGIn a Pack of 6, Infineon IGW30N60H3FKSA1 IGBT, 60 A 600 V, 3-Pin TO-247, PK
        Min Qty: 6
        Container: Package        		240
        • 6:$4.4440
        • 12:$3.5230
        • 60:$3.2870
        • 120:$3.0500
        • 300:$2.8860
        IGW30N60H3FKSA1
        DISTI # 1458592        		Infineon Technologies AGIn a Tube of 30, Infineon IGW30N60H3FKSA1 IGBT, 60 A 600 V, 3-Pin TO-247, TU
        Min Qty: 30
        Container: Tube        		0
        • 30:$3.5600
        IGW30N60H3
        DISTI # IGW30N60H3        		Infineon Technologies AGTransistor: IGBT,600V,30A,187W,TO247-3144
        • 100:$2.1300
        • 25:$2.5200
        • 5:$3.1600
        • 1:$3.4300
        IGW30N60H3
        DISTI # IGW30N60H3        		Infineon Technologies AGTransistor: IGBT,600V,30A,187W,TO247-3144
        • 100:$2.1200
        • 25:$2.5100
        • 5:$3.1500
        • 1:$3.4200
        IGW30N60H3
        DISTI # IGBT1229        		Infineon Technologies AGIGBT600V60A2.40VTO247-3
        RoHS: Compliant        		Stock DE - 6150Stock HK - 0Stock US - 0
        • 30:$1.9700
        • 60:$1.8500
        • 90:$1.8300
        • 150:$1.7900
        • 240:$1.6800
        IGW30N60H3FKSA1
        DISTI # 2725780        		Infineon Technologies AGTRANSISTOR, IGBT, 600V, 60A, TO-247
        RoHS: Compliant        		482
        • 1000:£2.1400
        • 500:£2.1800
        • 250:£2.2400
        • 100:£2.2800
        • 10:£2.3300
        • 1:£2.3800
        IGW30N60H3FKSA1
        DISTI # 2725780        		Infineon Technologies AGTRANSISTOR, IGBT, 600V, 60A, TO-247
        RoHS: Compliant        		478
        • 100:$2.9700
        • 10:$3.5600
        • 1:$3.7300
        Bild Teil # Beschreibung
        IGW30N60TPXKSA1

        Mfr.#: IGW30N60TPXKSA1

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        OMO.#: OMO-IGW30N65L5XKSA1

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        Mfr.#: IGW30N60H3

        OMO.#: OMO-IGW30N60H3

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        Mfr.#: IGW30T60

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        Mfr.#: IGW30N60TXK

        OMO.#: OMO-IGW30N60TXK-1190

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        Mfr.#: IGW30N65L5XKSA1

        OMO.#: OMO-IGW30N65L5XKSA1-INFINEON-TECHNOLOGIES

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        Mfr.#: IGW30N60H3

        OMO.#: OMO-IGW30N60H3-126

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        Verfügbarkeit
        Aktie:
        Available
        Auf Bestellung:
        4000
        Menge eingeben:
        Der aktuelle Preis von IGW30N60H3 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
        Referenzpreis (USD)
        Menge
        Stückpreis
        ext. Preis
        1
        2,08 $
        2,08 $
        10
        1,98 $
        19,81 $
        100
        1,88 $
        187,65 $
        500
        1,77 $
        886,15 $
        1000
        1,67 $
        1 668,00 $
        Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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