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2N6338G

2N6338G
Mfr. #:
2N6338G
Hersteller:
ON Semiconductor
Beschreibung:
Bipolar Transistors - BJT 25A 100V 200W NPN
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
2N6338G Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
2N6338G Datasheet2N6338G Datasheet (P4-P5)
ECAD Model:
Produkteigenschaft
Attributwert
Hersteller:
ON Semiconductor
Produktkategorie:
Bipolartransistoren - BJT
RoHS:
Y
Montageart:
SMD/SMT
Paket / Koffer:
SMB-3
Polarität des Transistors:
NPN
Aufbau:
Single
Kollektor- Emitterspannung VCEO Max:
100 V
Kollektor- Basisspannung VCBO:
120 V
Emitter- Basisspannung VEBO:
6 V
Kollektor-Emitter-Sättigungsspannung:
1.8 V
Maximaler DC-Kollektorstrom:
25 A
Bandbreitenprodukt fT gewinnen:
40 MHz
Minimale Betriebstemperatur:
- 65 C
Maximale Betriebstemperatur:
+ 150 C
Serie:
2N6338
Höhe:
8.51 mm
Länge:
39.37 mm
Verpackung:
Tablett
Breite:
26.67 mm
Marke:
ON Semiconductor
Kontinuierlicher Kollektorstrom:
25 A
DC-Kollektor/Basisverstärkung hfe Min:
50
Pd - Verlustleistung:
200 W
Produktart:
BJTs - Bipolartransistoren
Werkspackungsmenge:
100
Unterkategorie:
Transistoren
Gewichtseinheit:
0.006349 oz
Tags
2N6338, 2N633, 2N63, 2N6
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***Semiconductor
25 A, 100 V NPN Bipolar Power Transistor
***ure Electronics
2N6338 Series 100 V 25 A 200 W NPN High-Power Silicon Transistor - TO-204AA
***ical
Trans GP BJT NPN 100V 25A 200000mW 3-Pin(2+Tab) TO-3 Tray
***et Europe
Trans GP BJT NPN 100V 25A 3-Pin(2+Tab) TO-204 Tray
***p One Stop Global
Trans GP BJT NPN 100V 25A 3-Pin(2+Tab) TO-3 Tray
***th Star Micro
...designed for use in industrial-military power amplifier and switching circuit applications.
***i-Key
TRANS NPN 100V 25A TO-3
***ment14 APAC
BIPOLAR TRANSISTOR, NPN, 100V, TO-3; Tra; BIPOLAR TRANSISTOR, NPN, 100V, TO-3; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:100V; Transition Frequency Typ ft:40MHz; Power Dissipation Pd:200W; DC Collector Current:25A; DC Current Gain hFE:40
***ark
Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:100V; Transition Frequency ft:40MHz; Power Dissipation Pd:200W; DC Collector Current:25A; DC Current Gain hFE:40hFE; No. of Pins:2Pins; Operating Temperature Max:200�C RoHS Compliant: Yes
Teil # Mfg. Beschreibung Aktie Preis
2N6338G
DISTI # V36:1790_07300925		ON SemiconductorTrans GP BJT NPN 100V 25A 3-Pin(2+Tab) TO-3 Tray
RoHS: Compliant		1
  • 1000:$6.7280
  • 500:$7.3080
  • 200:$7.8120
  • 100:$8.2340
2N6338G
DISTI # 2N6338G-ND		ON SemiconductorTRANS NPN 100V 25A TO-3
RoHS: Compliant
Min Qty: 1
Container: Tray		93In Stock
  • 500:$8.1894
  • 100:$9.2060
  • 10:$10.9000
  • 1:$11.8600
2N6338G
DISTI # 26078079		ON SemiconductorTrans GP BJT NPN 100V 25A 3-Pin(2+Tab) TO-3 Tray
RoHS: Compliant		200
  • 500:$6.8259
  • 200:$7.0890
  • 100:$7.4545
2N6338G
DISTI # 26065377		ON SemiconductorTrans GP BJT NPN 100V 25A 3-Pin(2+Tab) TO-3 Tray
RoHS: Compliant		1
  • 1:$8.2340
2N6338G
DISTI # 2N6338G		ON SemiconductorTrans GP BJT NPN 100V 25A 3-Pin(2+Tab) TO-204 Tray - Trays (Alt: 2N6338G)
RoHS: Compliant
Min Qty: 100
Container: Tray		Americas - 0
  • 100:$6.9900
  • 200:$6.8900
  • 400:$6.7900
  • 600:$6.7900
  • 1000:$6.5900
2N6338G
DISTI # 26K5319		ON SemiconductorBIPOLAR TRANSISTOR, NPN, 100V, TO-3,Transistor Polarity:NPN,Collector Emitter Voltage V(br)ceo:100V,Transition Frequency ft:40MHz,Power Dissipation Pd:200W,DC Collector Current:25A,DC Current Gain hFE:40hFE,No. of Pins:2Pins RoHS Compliant: Yes0
  • 1:$11.4400
  • 10:$10.5300
  • 25:$10.1000
  • 50:$9.5100
  • 100:$8.9100
  • 250:$8.4800
  • 500:$7.9400
2N6338G.
DISTI # 15AC5405		ON SemiconductorTransistor Polarity:NPN,Collector Emitter Voltage V(br)ceo:100V,Transition Frequency ft:40MHz,Power Dissipation Pd:200W,DC Collector Current:25A,DC Current Gain hFE:40hFE,No. of Pins:2Pins,Operating Temperature Max:200°C RoHS Compliant: Yes0
  • 1:$11.3000
  • 10:$10.3900
  • 25:$9.9600
  • 50:$9.3700
  • 100:$8.7700
  • 250:$8.3400
  • 500:$7.8000
2N6338G
DISTI # 863-2N6338G		ON SemiconductorBipolar Transistors - BJT 25A 100V 200W NPN
RoHS: Compliant		112
  • 1:$11.3000
  • 10:$10.3900
  • 20:$9.9600
  • 100:$8.7700
  • 200:$8.3400
  • 500:$7.8000
  • 1000:$7.1600
2N6338
DISTI # 863-2N6338		ON SemiconductorBipolar Transistors - BJT 25A 100V 200W NPN
RoHS: Not compliant		0
    2N6338GON Semiconductor 
    RoHS: Not Compliant    		1314
    • 1000:$7.8700
    • 500:$8.2800
    • 100:$8.6200
    • 25:$8.9900
    • 1:$9.6800
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    		 Neu und Original
    Verfügbarkeit
    Aktie:
    97
    Auf Bestellung:
    2080
    Menge eingeben:
    Der aktuelle Preis von 2N6338G dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
    Referenzpreis (USD)
    Menge
    Stückpreis
    ext. Preis
    1
    11,30 $
    11,30 $
    10
    10,39 $
    103,90 $
    20
    9,96 $
    199,20 $
    100
    8,77 $
    877,00 $
    200
    8,34 $
    1 668,00 $
    500
    7,80 $
    3 900,00 $
    1000
    7,16 $
    7 160,00 $
    Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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