2N6338 stock, 2N6338, 2N6338G


PartNumber	2N6338G	2N6338	2N6338G.
Description	Bipolar Transistors - BJT 25A 100V 200W NPN	Bipolar Transistors - BJT Power BJT	Transistor Polarity:NPN, Collector Emitter Voltage V(br)ceo:100V, Transition Frequency ft:40MHz, Power Dissipation Pd:200W, DC Collector Current:25A, DC Current Gain hFE:40hFE, No. of Pins:2Pins
Manufacturer	ON Semiconductor	Microchip	-
Product Category	Bipolar Transistors - BJT	Bipolar Transistors - BJT	-
RoHS	Y	N	-
Mounting Style	SMD/SMT	-	-
Package / Case	SMB-3	-	-
Transistor Polarity	NPN	-	-
Configuration	Single	-	-
Collector Emitter Voltage VCEO Max	100 V	-	-
Collector Base Voltage VCBO	120 V	-	-
Emitter Base Voltage VEBO	6 V	-	-
Collector Emitter Saturation Voltage	1.8 V	-	-
Maximum DC Collector Current	25 A	-	-
Gain Bandwidth Product fT	40 MHz	-	-
Minimum Operating Temperature	- 65 C	-	-
Maximum Operating Temperature	+ 150 C	-	-
Series	2N6338	-	-
Height	8.51 mm	-	-
Length	39.37 mm	-	-
Packaging	Tray	Tray	-
Width	26.67 mm	-	-
Brand	ON Semiconductor	Microchip / Microsemi	-
Continuous Collector Current	25 A	-	-
DC Collector/Base Gain hfe Min	50	-	-
Pd Power Dissipation	200 W	-	-
Product Type	BJTs - Bipolar Transistors	BJTs - Bipolar Transistors	-
Factory Pack Quantity	100	1	-
Subcategory	Transistors	Transistors	-
Unit Weight	0.006349 oz	-	-

Search Part Number : "2N6338", Match & Start with "2N6338" - Total : 5

Hersteller	Teil #	Beschreibung
	2N6338G	Bipolar Transistors - BJT 25A 100V 200W NPN
	2N6338G.	Transistor Polarity:NPN, Collector Emitter Voltage V(br)ceo:100V, Transition Frequency ft:40MHz, Power Dissipation Pd:200W, DC Collector Current:25A, DC Current Gain hFE:40hFE, No. of Pins:2Pins
Microchip / Microsemi	2N6338	Bipolar Transistors - BJT Power BJT
Microchip / Microsemi	2N6338	TRANS NPN 100V 25A TO-3
ON Semiconductor	2N6338G	Bipolar Transistors - BJT 25A 100V 200W NPN

2N6338