BSZ0910NDXTMA1

Mfr. #:: BSZ0910NDXTMA1
Hersteller:: Infineon Technologies
Beschreibung:: MOSFET DIFFERENTIATED MOSFETS
Lebenszyklus:: Neu von diesem Hersteller.
Datenblatt:: BSZ0910NDXTMA1 Datenblatt
Die Zustellung:: DHL FedEx Ups TNT EMS
Zahlung:: T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Mehr Informationen:: BSZ0910NDXTMA1 Mehr Informationen

Produkteigenschaft
Attributwert

Hersteller:: Infineon

Produktkategorie:: MOSFET

RoHS:: Y

Technologie:: Si

Montageart:: SMD/SMT

Paket / Koffer:: PG-WISON-8

Anzahl der Kanäle:: 1 Channel

Polarität des Transistors:: N-Kanal

Vds - Drain-Source-Durchbruchspannung:: 30 V

Id - Kontinuierlicher Drainstrom:: 25 A

Rds On - Drain-Source-Widerstand:: 9.5 mOhms

Vgs th - Gate-Source-Schwellenspannung:: 1.2 V

Vgs - Gate-Source-Spannung:: 10 V

Qg - Gate-Ladung:: 4 nC

Minimale Betriebstemperatur:: - 55 C

Maximale Betriebstemperatur:: + 150 C

Pd - Verlustleistung:: 31 W

Aufbau:: Single

Kanalmodus:: Erweiterung

Verpackung:: Spule

Transistortyp:: 1 N-Channel

Marke:: Infineon-Technologien

Vorwärtstranskonduktanz - Min:: 33 S

Abfallzeit:: 2.8 ns

Produktart:: MOSFET

Anstiegszeit:: 3.2 ns

Werkspackungsmenge:: 5000

Unterkategorie:: MOSFETs

Typische Ausschaltverzögerungszeit:: 18.5 ns

Typische Einschaltverzögerungszeit:: 6.2 ns

Teil # Aliase:: BSZ0910ND SP001699886

Tags: BSZ09, BSZ0, BSZ

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

BSZ0910NDXTMA1 Beschreibung

***et Europe: OptiMOS Power Transistor MOSFET Dual N-Channel 60V 25A 8-Pin PG-WISON T/R

***ical: Trans MOSFET N-CH 30V 11.1A 8-Pin WISON EP T/R

***ronik: 2xN-CH 30V 25A 9,5mOhm WISON-8

***i-Key: DIFFERENTIATED MOSFETS

***ark: Mosfet, Dual N-Ch, 30V, 25A, 31W, Wison; Transistor Polarity:dual N Channel; Continuous Drain Current Id:25A; Drain Source Voltage Vds:30V; On Resistance Rds(On):0.0077Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:1.6V; Rohs Compliant: Yes

***ment14 APAC: Prices include import duty and tax. MOSFET, DUAL N-CH, 30V, 25A, 31W, WISON; Transistor Polarity:Dual N Channel; Continuous Drain Current Id:25A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.0077ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:1.6V; Power Dissipation Pd:31W; Transistor Case Style:WISON; No. of Pins:8Pins; Operating Temperature Max:150°C; Product Range:OptiMOS Series; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (27-Jun-2018)

***nell: MOSFET, DOPP CAN-N, 30V, 25A, 31W, WISON; Polarità Transistor:Canale N Doppio; Corrente Continua di Drain Id:25A; Tensione Drain Source Vds:30V; Resistenza di Attivazione Rds(on):0.0077ohm; Tensione Vgs di Misura Rds(on):10V; Tensione di Soglia Vgs:1.6V; Dissipazione di Potenza Pd:31W; Modello Case Transistor:WISON; No. di Pin:8Pin; Temperatura di Esercizio Max:150°C; Gamma Prodotti:OptiMOS Series; Standard di Qualifica Automotive:-; Livello di Sensibilità all'Umidità (MSL):MSL 1 - Non Limitata; Sostanze Estremamente Preoccupanti (SVHC):No SVHC (27-Jun-2018)

BSZ0910NDXTMA1 Mehr Informationen

Wireless Charging Solutions: Infineon Wireless Charging Solutions meet today's growing demand for wireless charge applications like smartphones, wearables, notebooks, and low-voltage drive devices. Infineon's highly efficient and cost-effective devices enable state-of-the-art solutions for the transmitter unit for inductive and resonant standards. Infineon devices are ready-to-use for the adapter/charger, fostering time-to-market of full wireless charging solutions. Infineon is a member of the Wireless Power Consortium and the AirFuel Alliance.

N-Channel OptiMOS™ Power MOSFETs: Infineon N-Channel OptiMOS™ Power MOSFETs are class leading power MOSFETs for highest power density and energy efficient solutions. Ultra low gate and output charges together with lowest on state resistance in small footprint packages make ideal choices for the demanding requirements of voltage regulator solutions in servers, datacom, and telecom applications. Super fast switching Control FETs together with low EMI Sync FETs provide solutions that are easy to design in. Infineon N-Channel OptiMOS™ Power MOSFETs provide excellent gate charge and are optimized for DC-DC conversion.

Resonant Wireless Charging - Consumer Applications: Infineon Technologies Resonant Wireless Charging - Consumer Applications takes the lead in fast switching in power transfer topologies. With the best figure of merit (FOM) for gate charge times, RDS(on) and Coss they enable 6.78MHz inverter designs. Superior power MOSFET technology addresses frequency switching implementations, especially in the 30-10V areas for class D inverter designs and in the 150-250V voltage class for class E inverter designs.

Inductive Wireless Charging Solutions: Infineon Technologies Inductive Wireless Charging Solutions use electromagnetic fields to transfer power from a transmitter to a receiver application. This technology charges batteries without a physical connection, all thanks to a wireless charging power supply. The benefits for wireless charging in applications are not having to plug in a device and no plug compatibility issues. It’s also safer since there is no contact with exposed electrical connectors. Wireless charging is more reliable in harsher environments, like drilling and mining. It also allows for seamless on-the-go charging whether in the car or in public places. Finally, it eliminates tangled charging cables while charging multiple devices in parallel.

Market price

Teil #	Mfg.	Beschreibung	Aktie	Preis
BSZ0910NDXTMA1 DISTI # V72:2272_19082117	Infineon Technologies AG	BSZ0910ND	4700	75000:$0.4537 30000:$0.4555 15000:$0.4574 6000:$0.4678 3000:$0.4921 1000:$0.4975 500:$0.6360 250:$0.7336 100:$0.7529 50:$0.8349 25:$0.9277 10:$1.0307 1:$1.3269
BSZ0910NDXTMA1 DISTI # BSZ0910NDXTMA1CT-ND	Infineon Technologies AG	DIFFERENTIATED MOSFETS RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	4942In Stock	1000:$0.6033 500:$0.7642 100:$0.9251 10:$1.1870 1:$1.3300
BSZ0910NDXTMA1 DISTI # BSZ0910NDXTMA1DKR-ND	Infineon Technologies AG	DIFFERENTIATED MOSFETS RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	4942In Stock	1000:$0.6033 500:$0.7642 100:$0.9251 10:$1.1870 1:$1.3300
BSZ0910NDXTMA1 DISTI # BSZ0910NDXTMA1TR-ND	Infineon Technologies AG	DIFFERENTIATED MOSFETS RoHS: Compliant Min Qty: 5000 Container: Tape & Reel (TR)	Temporarily Out of Stock	10000:$0.4998 5000:$0.5194
BSZ0910NDXTMA1 DISTI # 26736840	Infineon Technologies AG	BSZ0910ND	4700	15000:$0.4574 6000:$0.4678 3000:$0.4921 1000:$0.4975 500:$0.6360 250:$0.7336 100:$0.7529 50:$0.8349 25:$0.9277 14:$1.0307
BSZ0910NDXTMA1 DISTI # SP001699886	Infineon Technologies AG	OptiMOS Power Transistor MOSFET Dual N-Channel 60V 25A 8-Pin PG-WISON T/R (Alt: SP001699886) RoHS: Compliant Min Qty: 5000 Container: Tape and Reel	Europe - 5000	50000:€0.4589 30000:€0.4899 20000:€0.5629 10000:€0.6739 5000:€0.8039
BSZ0910NDXTMA1 DISTI # BSZ0910NDXTMA1	Infineon Technologies AG	OptiMOS Power Transistor MOSFET Dual N-Channel 60V 25A 8-Pin PG-WISON T/R - Tape and Reel (Alt: BSZ0910NDXTMA1) RoHS: Compliant Min Qty: 5000 Container: Reel	Americas - 0	50000:$0.4719 30000:$0.4809 20000:$0.4969 10000:$0.5159 5000:$0.5349
BSZ0910NDXTMA1 DISTI # 93AC6986	Infineon Technologies AG	MOSFET, DUAL N-CH, 30V, 25A, 31W, WISON,Transistor Polarity:Dual N Channel,Continuous Drain Current Id:25A,Drain Source Voltage Vds:30V,On Resistance Rds(on):0.0077ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:1.6V,RoHS Compliant: Yes	5000	1000:$0.5640 500:$0.7140 250:$0.7610 100:$0.8080 50:$0.8890 25:$0.9700 10:$1.0500 1:$1.2300
BSZ0910NDXTMA1 DISTI # 726-BSZ0910NDXTMA1	Infineon Technologies AG	MOSFET DIFFERENTIATED MOSFETS RoHS: Compliant	65	1:$1.2200 10:$1.0400 100:$0.8000 500:$0.7070 1000:$0.5580 5000:$0.4950 10000:$0.4770
BSZ0910NDXTMA1 DISTI # 2986396	Infineon Technologies AG	MOSFET, DUAL N-CH, 30V, 25A, 31W, WISON	5000	500:£0.5120 250:£0.5460 100:£0.5800 10:£0.8070 1:£1.0200
BSZ0910NDXTMA1 DISTI # 2986396	Infineon Technologies AG	MOSFET, DUAL N-CH, 30V, 25A, 31W, WISON RoHS: Compliant	5000	1000:$0.7300 500:$0.8190 250:$0.8790 100:$0.9360 25:$1.1500 5:$1.2300
BSZ0910NDXTMA1 DISTI # XSKDRABV0044665	Infineon Technologies AG	RoHS: Compliant	15000 in Stock0 on Order	15000:$0.6387 5000:$0.6843

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Verfügbarkeit

Aktie:: 165
Auf Bestellung:: 2148
Menge eingeben:

Der aktuelle Preis von BSZ0910NDXTMA1 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]

Referenzpreis (USD)

Menge
Stückpreis
ext. Preis

1: ~~1,22 $~~; ~~1,22 $~~

10: ~~1,04 $~~; ~~10,40 $~~

100: ~~0,80 $~~; ~~80,00 $~~

500: ~~0,71 $~~; ~~353,50 $~~

1000: ~~0,56 $~~; ~~558,00 $~~

Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.

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BSZ0910NDXTMA1

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes