 | |  | |
| PartNumber | BSZ0901NS | BSZ0901NSI | BSZ0901NSATMA1 |
| Description | MOSFET N-Ch 30V 40A TDSON-8 OptiMOS | MOSFET N-Ch 30V 40A TDSON-8 OptiMOS | MOSFET LV POWER MOS |
| Manufacturer | Infineon | Infineon | Infineon |
| Product Category | MOSFET | MOSFET | MOSFET |
| RoHS | Y | Y | - |
| Technology | Si | Si | Si |
| Mounting Style | SMD/SMT | SMD/SMT | SMD/SMT |
| Package / Case | TSDSON-8 | TSDSON-8 | TSDSON-8 |
| Number of Channels | 1 Channel | 1 Channel | - |
| Transistor Polarity | N-Channel | N-Channel | - |
| Vds Drain Source Breakdown Voltage | 30 V | 30 V | - |
| Id Continuous Drain Current | 40 A | 40 A | - |
| Rds On Drain Source Resistance | 1.7 mOhms | 2.1 mOhms | - |
| Vgs th Gate Source Threshold Voltage | 2.2 V | 2.2 V | - |
| Vgs Gate Source Voltage | 20 V | 20 V | - |
| Qg Gate Charge | 23 nC | 41 nC | - |
| Minimum Operating Temperature | - 55 C | - 55 C | - |
| Maximum Operating Temperature | + 150 C | + 150 C | - |
| Pd Power Dissipation | 2.1 W | 69 W | - |
| Configuration | Single | Single | - |
| Tradename | OptiMOS | OptiMOS | OptiMOS |
| Packaging | Reel | Reel | Reel |
| Height | 1 mm | 1 mm | 1.1 mm |
| Length | 3.3 mm | 3.3 mm | 3.3 mm |
| Transistor Type | 1 N-Channel | 1 N-Channel | - |
| Width | 3.3 mm | 3.3 mm | 3.3 mm |
| Brand | Infineon Technologies | Infineon Technologies | Infineon Technologies |
| Forward Transconductance Min | 140 S | 50 S | - |
| Fall Time | 4.8 ns | 4.6 ns | - |
| Product Type | MOSFET | MOSFET | MOSFET |
| Rise Time | 6.8 ns | 7.2 ns | - |
| Factory Pack Quantity | 5000 | 5000 | - |
| Subcategory | MOSFETs | MOSFETs | MOSFETs |
| Typical Turn Off Delay Time | 28 ns | 27 nS | - |
| Typical Turn On Delay Time | 5.4 ns | 5 nS | - |
| Part # Aliases | BSZ0901NSATMA1 BSZ91NSXT SP000854570 | BSZ0901NSIATMA1 BSZ91NSIXT SP000853566 | BSZ0901NS BSZ91NSXT SP000854570 |
| Hersteller | Teil # | Beschreibung | RFQ |
|---|---|---|---|
Infineon Technologies |
BSZ0909NDXTMA1 | MOSFET DIFFERENTIATED MOSFETS | |
| BSZ097N04LSGATMA1 | MOSFET N-Ch 40V 40A TSDSON-8 OptiMOS 3 | ||
| BSZ097N04LS G | MOSFET N-Ch 40V 40A TSDSON-8 OptiMOS 3 | ||
| BSZ0904NSI | MOSFET N-Ch 30V 40A TDSON-8 OptiMOS | ||
| BSZ0902NSI | MOSFET N-Ch 30V 40A TDSON-8 OptiMOS | ||
| BSZ0901NS | MOSFET N-Ch 30V 40A TDSON-8 OptiMOS | ||
| BSZ0902NS | MOSFET N-Ch 30V 40A TDSON-8 OptiMOS | ||
| BSZ0904NSIATMA1 | MOSFET N-Ch 30V 40A TDSON-8 OptiMOS | ||
| BSZ0902NSIATMA1 | MOSFET N-Ch 30V 40A TDSON-8 OptiMOS | ||
| BSZ0901NSI | MOSFET N-Ch 30V 40A TDSON-8 OptiMOS | ||
| BSZ0909NS | MOSFET N-Ch 30V 36A TDSON-8 OptiMOS | ||
| BSZ096N10LS5ATMA1 | MOSFET | ||
| BSZ0910NDXTMA1 | MOSFET DIFFERENTIATED MOSFETS | ||
| BSZ0945NDXTMA1 | MOSFET DIFFERENTIATED MOSFETS | ||
| BSZ0902NSATMA1 | MOSFET N-CH 30V 40A TSDSON-8 | ||
| BSZ0909NDXTMA1 | MOSFET 2 N-CH 30V 20A WISON-8 | ||
| BSZ0909NSATMA1 | MOSFET N-CH 34V 9A 8TSDSON | ||
| BSZ0904NSIATMA1 | MOSFET N-CH 30V 40A TSDSON | ||
| BSZ0910NDXTMA1 | DIFFERENTIATED MOSFETS | ||
| BSZ0945NDXTMA1 | TRENCH <= 40V | ||
| BSZ096N10LS5ATMA1 | MV POWER MOS | ||
| BSZ0901NSIATMA1 | MOSFET N-CH 30V 40A TSDSON | ||
| BSZ0901NSATMA1 | MOSFET N-CH 30V S308 | ||
| BSZ0902NSIATMA1 | MOSFET N-CH 30V 21A TSDSON-8 | ||
Infineon Technologies |
BSZ0902NSATMA1 | MOSFET LV POWER MOS | |
| BSZ0901NSATMA1 | MOSFET LV POWER MOS | ||
| BSZ0901NSXT | Trans MOSFET N-CH 30V 25A 8-Pin TSDSON EP T/R - Tape and Reel (Alt: BSZ0901NSATMA1) | ||
| BSZ0901NSI FDMC7660S | Neu und Original | ||
| BSZ0902NS | Trans MOSFET N-CH 30V 25A 8-Pin TSDSON EP T/R (Alt: BSZ0902NS) | ||
| BSZ0904NSI | MOSFET N-Ch 30V 40A TDSON-8 OptiMOS | ||
| BSZ0904NSI CSD17309 | Neu und Original | ||
| BSZ0906S | Neu und Original | ||
| BSZ0907ND | N-KANAL POWER MOS_TR_RO (Alt: SP000865186) | ||
| BSZ0908ND | Neu und Original | ||
| BSZ0908NDXTMA1 | Trans MOSFET N-CH 30V 8.1A/12.4A 8-Pin WISON T/R (Alt: SP000865176) | ||
| BSZ0909ND | DUAL N-CHANNEL OPTIMOS MOSFET (Alt: BSZ0909ND) | ||
| BSZ0909ND(SP001637282) | Neu und Original | ||
| BSZ0909NS | Trans MOSFET N-CH 34V 9A 8-Pin TSDSON T/R (Alt: BSZ0909NS) | ||
| BSZ0909NS G | Neu und Original | ||
| BSZ0909NSG | Neu und Original | ||
| BSZ09102599409 | Neu und Original | ||
| BSZ0945ND. | Neu und Original | ||
| BSZ096N10LS5 | Neu und Original | ||
| BSZ097N04L | Neu und Original | ||
| BSZ097N04LS G | Trans MOSFET N-CH 40V 12A 8-Pin TSDSON EP | ||
| BSZ097N04LSG | POWER FIELD-EFFECT TRANSISTOR, 12A I(D), 40V, 0.0142OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET | ||
| BSZ0901NSI | Darlington Transistors MOSFET N-Ch 30V 40A TDSON-8 OptiMOS | ||
| BSZ0901NS | Darlington Transistors MOSFET N-Ch 30V 40A TDSON-8 OptiMOS | ||
| BSZ0907NDXTMA1 | IGBT Transistors MOSFET N-Ch 30V 25A,30A WISON-8 | ||
| BSZ0902NSI | RF Bipolar Transistors MOSFET N-Ch 30V 40A TDSON-8 OptiMOS |