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Quality GuaranteesWe provide 90-360 days warranty.
If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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| Teil # | Mfg. | Beschreibung | Aktie | Preis |
|---|---|---|---|---|
| BUZ73AL DISTI # BUZ73ALIN-ND | Infineon Technologies AG | MOSFET N-CH 200V 5.5A TO-220AB RoHS: Compliant Min Qty: 500 Container: Tube | Limited Supply - Call | |
| BUZ73ALHXKSA1 DISTI # BUZ73ALHXKSA1-ND | Infineon Technologies AG | MOSFET N-CH 200V 5.5A TO220-3 RoHS: Compliant Min Qty: 500 Container: Tube | Limited Supply - Call | |
| BUZ73ALIN DISTI # BUZ73ALIN | Infineon Technologies AG | - Bulk (Alt: BUZ73ALIN) Min Qty: 1042 Container: Bulk | Americas - 0 |
|
| BUZ73ALHXKSA1 DISTI # BUZ73ALHXKSA1 | Infineon Technologies AG | Trans MOSFET N-CH 200V 5.5A 3-Pin TO-220 Tube - Bulk (Alt: BUZ73ALHXKSA1) RoHS: Compliant Min Qty: 863 Container: Bulk | Americas - 0 |
|
| BUZ73AL DISTI # 726-BUZ73AL | Infineon Technologies AG | MOSFET N-Ch 200V 5.5A TO220-3 RoHS: Compliant | 0 | |
| BUZ73AL H DISTI # 726-BUZ73ALH | Infineon Technologies AG | MOSFET N-Ch 200V 5.5A TO220-3 RoHS: Compliant | 0 | |
| BUZ73ALHXKSA1 | Infineon Technologies AG | Power Field-Effect Transistor, 5.5A I(D), 200V, 0.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB RoHS: Compliant | 5866 |
|
| BUZ73ALIN | Infineon Technologies AG | RoHS: Not Compliant | 503 |
|
| BUZ73AL | Siemens | Power Field-Effect Transistor, 5.5A I(D), 200V, 0.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB RoHS: Not Compliant | 4549 |
| Bild | Teil # | Beschreibung |
|---|---|---|
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Mfr.#: BUZ31 E3046 OMO.#: OMO-BUZ31-E3046 |
MOSFET N-Ch 200V 14.5A I2PAK-3 |
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Mfr.#: BUZ32 H OMO.#: OMO-BUZ32-H |
MOSFET N-Ch 200V 9.5A TO220-3 |
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Mfr.#: BUZ14 OMO.#: OMO-BUZ14-1190 |
Neu und Original |
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Mfr.#: BUZ310 OMO.#: OMO-BUZ310-1190 |
Neu und Original |
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Mfr.#: BUZ32H3045A OMO.#: OMO-BUZ32H3045A-1190 |
Power Field-Effect Transistor, 9.5A I(D), 200V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AA |
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Mfr.#: BUZ35 OMO.#: OMO-BUZ35-1190 |
Neu und Original |
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Mfr.#: BUZ41A. OMO.#: OMO-BUZ41A--1190 |
Neu und Original |
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Mfr.#: BUZ74A OMO.#: OMO-BUZ74A-1190 |
2.1 A, 500 V, 4 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220 |
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Mfr.#: BUZ901P OMO.#: OMO-BUZ901P-1190 |
N CHANNEL MOSFET, 200V, 8A, TO-247, Transistor Polarity:N Channel, Continuous Drain Current Id:8A, Drain Source Voltage Vds:200V, On Resistance Rds(on):1.5ohm, Rds(on) Test Voltage Vgs:-, Thresh |
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Mfr.#: BUZ91 OMO.#: OMO-BUZ91-1190 |
Neu und Original |
