HGTP15N40E1

HGTP15N40E1
Mfr. #:
HGTP15N40E1
Hersteller:
Rochester Electronics, LLC
Beschreibung:
Insulated Gate Bipolar Transistor, 15A I(C), 400V V(BR)CES, N-Channel, TO-220AB
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
HGTP15N40E1 Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Produkteigenschaft
Attributwert
Tags
HGTP15, HGTP1, HGTP, HGT
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***or
15A, 400V, N-CHANNEL IGBT
Teil # Mfg. Beschreibung Aktie Preis
HGTP15N40E1Harris SemiconductorInsulated Gate Bipolar Transistor, 15A I(C), 400V V(BR)CES, N-Channel, TO-220AB
RoHS: Not Compliant
488
  • 1000:$1.5100
  • 500:$1.5900
  • 100:$1.6600
  • 25:$1.7300
  • 1:$1.8600
Bild Teil # Beschreibung
HGTP12N60C3D

Mfr.#: HGTP12N60C3D

OMO.#: OMO-HGTP12N60C3D

IGBT Transistors HGTP12N60C3D
HGTP12N60C3D

Mfr.#: HGTP12N60C3D

OMO.#: OMO-HGTP12N60C3D-ON-SEMICONDUCTOR

IGBT Transistors HGTP12N60C3D
HGTP10N40C1

Mfr.#: HGTP10N40C1

OMO.#: OMO-HGTP10N40C1-1190

Insulated Gate Bipolar Transistor, 10A I(C), 400V V(BR)CES, N-Channel, TO-220AB
HGTP10N40C1D

Mfr.#: HGTP10N40C1D

OMO.#: OMO-HGTP10N40C1D-1190

Insulated Gate Bipolar Transistor, 17.5A I(C), 400V V(BR)CES, N-Channel, TO-220AB
HGTP10N50E1

Mfr.#: HGTP10N50E1

OMO.#: OMO-HGTP10N50E1-1190

Insulated Gate Bipolar Transistor, 10A I(C), 500V V(BR)CES, N-Channel, TO-220AB
HGTP12N60A4

Mfr.#: HGTP12N60A4

OMO.#: OMO-HGTP12N60A4-ON-SEMICONDUCTOR

IGBT 600V 54A 167W TO220AB
HGTP12N60C3DR

Mfr.#: HGTP12N60C3DR

OMO.#: OMO-HGTP12N60C3DR-1190

Neu und Original
HGTP15N50C1

Mfr.#: HGTP15N50C1

OMO.#: OMO-HGTP15N50C1-1190

Insulated Gate Bipolar Transistor, 15A I(C), 500V V(BR)CES, N-Channel, TO-220AB
HGTP1N120BND

Mfr.#: HGTP1N120BND

OMO.#: OMO-HGTP1N120BND-1190

Neu und Original
HGTP1N120CN

Mfr.#: HGTP1N120CN

OMO.#: OMO-HGTP1N120CN-1190

Neu und Original
Verfügbarkeit
Aktie:
Available
Auf Bestellung:
5000
Menge eingeben:
Der aktuelle Preis von HGTP15N40E1 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
Referenzpreis (USD)
Menge
Stückpreis
ext. Preis
1
0,00 $
0,00 $
10
0,00 $
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100
0,00 $
0,00 $
500
0,00 $
0,00 $
1000
0,00 $
0,00 $
Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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