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HGTP12N60C3D

HGTP12N60C3D
Mfr. #:
HGTP12N60C3D
Hersteller:
ON Semiconductor
Beschreibung:
IGBT Transistors HGTP12N60C3D
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
HGTP12N60C3D Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Produkteigenschaft
Attributwert
Hersteller
Fairchild Semiconductor
Produktkategorie
IGBTs - Single
Serie
-
Verpackung
Rohr
Teil-Aliasnamen
HGTP12N60C3D_NL
Gewichtseinheit
0.063493 oz
Montageart
Durchgangsloch
Paket-Koffer
TO-220-3
Eingabetyp
Standard
Befestigungsart
Durchgangsloch
Lieferanten-Geräte-Paket
TO-220AB
Aufbau
Single
Leistung max
104W
Reverse-Recovery-Time-trr
40ns
Strom-Kollektor-Ic-Max
24A
Spannungs-Kollektor-Emitter-Breakdown-Max
600V
IGBT-Typ
-
Strom-Kollektor-gepulster-Icm
96A
Vce-on-Max-Vge-Ic
2.2V @ 15V, 15A
Schaltenergie
380μJ (on), 900μJ (off)
Gate-Gebühr
48nC
Td-ein-aus-25°C
-
Testbedingung
-
Pd-Verlustleistung
104 W
Maximale-Betriebstemperatur
+ 150 C
Mindest-Betriebstemperatur
- 40 C
Kollektor-Emitter-Spannung-VCEO-Max
600 V
Kollektor-Emitter-Sättigungsspannung
1.65 V
Kontinuierlicher Kollektorstrom-bei-25-C
24 A
Gate-Emitter-Leckstrom
+/- 100 nA
Maximale Gate-Emitter-Spannung
+/- 20 V
Kontinuierlicher Kollektor-Strom-Ic-Max
24 A
Tags
HGTP12N60C3D, HGTP12N60C, HGTP12, HGTP1, HGTP, HGT
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ical
Trans IGBT Chip N=-CH 600V 24A 104000mW 3-Pin(3+Tab) TO-220AB Rail
***p One Stop Global
Trans IGBT Chip N-CH 600V 24A 3-Pin(3+Tab) TO-220AB Rail
***ure Electronics
HGTP12N60C3D Series 600 V 24 A Flange Mount UFS N-Channel IGBT-TO-220AB
***inecomponents.com
600V,24A,UFS SERIES NCH IGBT,W/ANTI-PARALLEL HYPERFAST DIODE
***i-Key
IGBT SMPS N-CH 600V 24A TO-220AB
***ark
Ptpigbt To220 24A 600V Rohs Compliant: Yes
***eco
3 LD PLASTIC W/EXPOSED HEATSNK <AZ
***Semiconductor
600V, UFS IGBT
***ser
IGBTs HGTP12N60C3D
***rchild Semiconductor
This family of MOS gated high voltage switching devices combine the best features of MOSFETs and bipolar transistors. The device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25°C and 150°C. The IGBT used is the development type TA49123. The diode used in anti-parallel with the IGBT is the development type TA49188.The IGBT is ideal for many high voltage switching applications operating at moderate frequencies where low conduction losses are essential.Formerly Developmental Type TA49182.
Teil # Mfg. Beschreibung Aktie Preis
HGTP12N60C3D
DISTI # V36:1790_06359238		ON SemiconductorPTPIGBT TO220 24A 600V780
  • 800:$3.2470
HGTP12N60C3D
DISTI # V99:2348_06359238		ON SemiconductorPTPIGBT TO220 24A 600V550
  • 5000:$2.0330
  • 2500:$2.0660
  • 1000:$2.1669
  • 500:$2.1900
  • 250:$2.3430
  • 100:$2.4580
  • 10:$2.8190
  • 1:$3.2470
HGTP12N60C3D
DISTI # HGTP12N60C3D-ND		ON SemiconductorIGBT 600V 24A 104W TO220AB
RoHS: Compliant
Min Qty: 1
Container: Tube		On Order
  • 1600:$2.0421
  • 800:$2.4214
  • 100:$2.8444
  • 10:$3.4720
  • 1:$3.8700
HGTP12N60C3D
DISTI # 30329720		ON SemiconductorPTPIGBT TO220 24A 600V780
  • 500:$2.1900
  • 250:$2.3430
  • 100:$2.4580
  • 10:$2.8190
  • 5:$3.2470
HGTP12N60C3D
DISTI # 26156899		ON SemiconductorPTPIGBT TO220 24A 600V550
  • 500:$2.1900
  • 250:$2.3430
  • 100:$2.4580
  • 10:$2.8190
  • 3:$3.2470
HGTP12N60C3D
DISTI # 14141576		ON SemiconductorPTPIGBT TO220 24A 600V400
  • 10:$1.1094
HGTP12N60C3D
DISTI # HGTP12N60C3D		ON SemiconductorTrans IGBT Chip N-CH 600V 24A 3-Pin(3+Tab) TO-220AB Rail - Rail/Tube (Alt: HGTP12N60C3D)
RoHS: Compliant
Min Qty: 800
Container: Tube		Americas - 0
  • 800:$1.5900
  • 1600:$1.5900
  • 3200:$1.5900
  • 4800:$1.5900
  • 8000:$1.4900
HGTP12N60C3D
DISTI # 58K1596		ON SemiconductorTrans IGBT Chip N-CH 600V 24A 3-Pin(3+Tab) TO-220AB Rail - Bulk (Alt: 58K1596)
RoHS: Compliant
Min Qty: 1
Container: Bulk		Americas - 0
  • 1:$4.0500
  • 10:$3.4400
  • 25:$3.2900
  • 50:$3.1400
  • 100:$2.9800
  • 250:$2.8400
  • 500:$2.5400
HGTP12N60C3D
DISTI # 58K1596		ON SemiconductorSINGLE IGBT, 600V, 24A,DC Collector Current:24A,Collector Emitter Saturation Voltage Vce(on):1.8V,Power Dissipation Pd:104W,Collector Emitter Voltage V(br)ceo:600V,No. of Pins:3Pins,Operating Temperature Max:150°C,MSL:- , RoHS Compliant: Yes329
  • 1:$4.0500
  • 10:$3.4400
  • 25:$3.2900
  • 50:$3.1400
  • 100:$2.9800
  • 250:$2.8400
  • 500:$2.5400
HGTP12N60C3D.
DISTI # 27AC6332		Fairchild Semiconductor CorporationPTPIGBT TO220 24A 600V , ROHS COMPLIANT: YES0
  • 1:$4.1300
  • 10:$3.5100
  • 25:$3.3600
  • 50:$3.1400
  • 100:$2.9800
  • 250:$2.8400
  • 500:$2.5400
HGTP12N60C3DFairchild Semiconductor CorporationInsulated Gate Bipolar Transistor, 24A I(C), 600V V(BR)CES, N-Channel, TO-220AB
RoHS: Compliant		30
  • 1000:$2.9600
  • 500:$3.1100
  • 100:$3.2400
  • 25:$3.3800
  • 1:$3.6400
HGTP12N60C3DON SemiconductorHGTP12N60C3D Series 600 V 24 A Flange Mount UFS N-Channel IGBT-TO-220AB
RoHS: Compliant		3999Tube
  • 5:$2.4200
  • 50:$2.2000
  • 300:$1.8300
HGTP12N60C3D
DISTI # 512-HGTP12N60C3D		ON SemiconductorIGBT Transistors HGTP12N60C3D
RoHS: Compliant		17
  • 1:$3.6800
  • 10:$3.1300
  • 100:$2.7100
  • 250:$2.5800
  • 500:$2.3100
  • 1000:$1.9500
  • 2500:$1.8500
HGTP12N60C3D
DISTI # C1S541901409674		ON SemiconductorTrans IGBT Chip N-CH 600V 24A 104000mW 3-Pin(3+Tab) TO-220AB Tube
RoHS: Compliant		550
  • 500:$2.1900
  • 100:$2.4580
  • 1:$3.2470
HGTP12N60C3D
DISTI # XSFP00000011186		Fairchild Semiconductor Corporation 
RoHS: Compliant		2691
  • 50:$4.8400
  • 2691:$4.4000
Bild Teil # Beschreibung
HGTP12N60A4

Mfr.#: HGTP12N60A4

OMO.#: OMO-HGTP12N60A4

 IGBT Transistors 600V N-Channel IGBT SMPS Series
HGTP12N60C3D

Mfr.#: HGTP12N60C3D

OMO.#: OMO-HGTP12N60C3D-ON-SEMICONDUCTOR

 IGBT Transistors HGTP12N60C3D
HGTP12N60A4

Mfr.#: HGTP12N60A4

OMO.#: OMO-HGTP12N60A4-ON-SEMICONDUCTOR

 IGBT 600V 54A 167W TO220AB
HGTP12N60A4D

Mfr.#: HGTP12N60A4D

OMO.#: OMO-HGTP12N60A4D-ON-SEMICONDUCTOR

 IGBT 600V 54A 167W TO220AB
HGTP12N60A4D(PRFMD)

Mfr.#: HGTP12N60A4D(PRFMD)

OMO.#: OMO-HGTP12N60A4D-PRFMD--1190

 Neu und Original
HGTP12N60A4D?

Mfr.#: HGTP12N60A4D?

OMO.#: OMO-HGTP12N60A4D--1190

 PT P TO220 12A 600V SMPS
HGTP12N60B3D

Mfr.#: HGTP12N60B3D

OMO.#: OMO-HGTP12N60B3D-1190

 Neu und Original
HGTP12N60C3

Mfr.#: HGTP12N60C3

OMO.#: OMO-HGTP12N60C3-ON-SEMICONDUCTOR

 IGBT 600V 24A 104W TO220AB
HGTP12N60C3D G12N60C3D

Mfr.#: HGTP12N60C3D G12N60C3D

OMO.#: OMO-HGTP12N60C3D-G12N60C3D-1190

 Neu und Original
HGTP12N60C3DLS

Mfr.#: HGTP12N60C3DLS

OMO.#: OMO-HGTP12N60C3DLS-1190

 Neu und Original
Verfügbarkeit
Aktie:
Available
Auf Bestellung:
2000
Menge eingeben:
Der aktuelle Preis von HGTP12N60C3D dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
Referenzpreis (USD)
Menge
Stückpreis
ext. Preis
1
1,66 $
1,66 $
10
1,58 $
15,81 $
100
1,50 $
149,77 $
500
1,41 $
707,25 $
1000
1,33 $
1 331,30 $
Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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