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HN1B04FE-Y,LF

HN1B04FE-Y,LF
Mfr. #:
HN1B04FE-Y,LF
Hersteller:
Toshiba
Beschreibung:
Bipolar Transistors - BJT Transistor for Low Freq Sm-Signal Amp
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
HN1B04FE-Y,LF Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
HN1B04FE-Y,LF DatasheetHN1B04FE-Y,LF Datasheet (P4-P6)
ECAD Model:
Produkteigenschaft
Attributwert
Hersteller:
Toshiba
Produktkategorie:
Bipolartransistoren - BJT
RoHS:
Y
Technologie:
Si
Montageart:
SMD/SMT
Paket / Koffer:
SOT-563-6
Polarität des Transistors:
NPN, PNP
Aufbau:
Dual
Kollektor- Emitterspannung VCEO Max:
50 V
Kollektor- Basisspannung VCBO:
60 V, - 50 V
Emitter- Basisspannung VEBO:
5 V
Kollektor-Emitter-Sättigungsspannung:
100 mV
Maximaler DC-Kollektorstrom:
150 mA
Bandbreitenprodukt fT gewinnen:
80 MHz, 80 MHz
Maximale Betriebstemperatur:
+ 150 C
Serie:
HN1B04
DC-Stromverstärkung hFE Max:
400
Verpackung:
Spule
Marke:
Toshiba
DC-Kollektor/Basisverstärkung hfe Min:
120
Pd - Verlustleistung:
100 mW
Produktart:
BJTs - Bipolartransistoren
Werkspackungsmenge:
4000
Unterkategorie:
Transistoren
Gewichtseinheit:
0.000106 oz
Tags
HN1B04FE-Y, HN1B04FE, HN1B04, HN1B0, HN1B, HN1
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ical
Trans GP BJT NPN/PNP 50V 0.15A 100mW 6-Pin ES T/R
***i-Key
TRANS NPN/PNP 50V 0.15A ES6
***et
ES6 PLN(LF),ACTIVE
***ical
Trans GP BJT NPN 50V 0.15A 320mW 3-Pin SOT-23
***el Electronic
SMCJ Series 38.9 V 1.5 kW Surface Mount Uni-Directional TVS Diode - DO-214AB
***enic
30nA 50V 320mW 150mA 290@2mA,5V 100MHz 170mV@100mA,5mA NPN +150¡æ@(Tj) SOT-23(SOT-23-3) Bipolar Transistors - BJT ROHS
***or
X34 PB-F SOT-23 TRANSISTOR FOR L
***-Wing Technology
Tape & Reel (TR) Surface Mount NPN SINGLE Bipolar (BJT) Transistor 180 @ 1mA 6V 150mA 150mW 100MHz
***ical
Trans GP BJT NPN 50V 0.15A Automotive 3-Pin SC-75 T/R
***peria
2PC4617 - NPN general-purpose transistor
***ment14 APAC
TRANSISTOR NPN 50V 0.15A SC-75; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:50V; Transition Frequency Typ ft:100MHz; Power Dissipation Pd:150mW; DC Collector Current:150mA; DC Current Gain hFE:180; Operating Temperature Range:-65°C to +150°C; Transistor Case Style:SOT-416; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Collector Emitter Voltage Vces:200mV; Current Ic Continuous a Max:50mA; Gain Bandwidth ft Typ:100MHz; Hfe Min:180; Package / Case:SOT-416; Power Dissipation Pd:150mW; Termination Type:SMD; Transistor Type:General Purpose
***-Wing Technology
Tape & Reel (TR) Surface Mount PNP SINGLE Bipolar (BJT) Transistor 120 @ 1mA 6V 150mA 150mW 100MHz
***p One Stop
Trans GP BJT PNP 50V 0.15A Automotive 3-Pin SC-75 T/R
***peria
2PA1774 - PNP general-purpose transistor
*** Americas
PNP transistor in a SOT416 (SC-75) plastic package
***-Wing Technology
Tape & Reel (TR) Surface Mount NPN SINGLE Bipolar (BJT) Transistor 120 @ 1mA 6V 150mA 150mW 100MHz
***p One Stop
Trans GP BJT NPN 50V 0.15A Automotive 3-Pin SC-75 T/R
***peria
2PC4617 - NPN general-purpose transistor
***ment14 APAC
TRANSISTOR NPN 50V 0.15A SC-75; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:50V; Transition Frequency Typ ft:100MHz; Power Dissipation Pd:150mW; DC Collector Current:150mA; DC Current Gain hFE:120; Operating Temperature Range:-65°C to +150°C; Transistor Case Style:SOT-416; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Collector Emitter Voltage Vces:200mV; Current Ic Continuous a Max:50mA; Gain Bandwidth ft Typ:100MHz; Hfe Min:120; Package / Case:SOT-416; Power Dissipation Pd:150mW; Termination Type:SMD; Transistor Type:General Purpose
***et
Trans GP BJT PNP 50V 0.15A 3-Pin S-Mini Embossed T/R
***enic
50V 150mW 150mA 70@2mA,6V 80MHz 100mV@100mA,10mA PNP +125¡æ@(Tj) SOT-23(SOT-23-3) Bipolar Transistors - BJT ROHS
***
TRANS S-MINI PLN
*** Source Electronics
Trans GP BJT NPN 50V 0.15A 150mW 3-Pin VESM T/R / TRANS NPN 50V 0.15A VESM
***enic
50V 150mW 150mA 200@2mA,6V 60MHz 150mV@100mA,10mA NPN +150¡æ@(Tj) SOT-723 Bipolar Transistors - BJT ROHS
***
VESM PLN ACTIVE
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Mfr.#: LM7321MA/NOPB

OMO.#: OMO-LM7321MA-NOPB-TEXAS-INSTRUMENTS

 Operational Amplifiers - Op Amps 30V Sgl RRIO Amp
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Mfr.#: LM7321MAX/NOPB

OMO.#: OMO-LM7321MAX-NOPB-TEXAS-INSTRUMENTS

 Operational Amplifiers - Op Amps SGL Ch RRIO Hi Output Crnt Op Amp
Verfügbarkeit
Aktie:
Available
Auf Bestellung:
1992
Menge eingeben:
Der aktuelle Preis von HN1B04FE-Y,LF dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
Referenzpreis (USD)
Menge
Stückpreis
ext. Preis
1
0,32 $
0,32 $
10
0,20 $
2,04 $
100
0,08 $
8,50 $
1000
0,06 $
58,00 $
Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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