 |  | | |
| PartNumber | HN1B04FE-Y,LF | HN1B04FE-Y | HN1B04FE-Y TE85L |
| Description | Bipolar Transistors - BJT Transistor for Low Freq Sm-Signal Amp | ||
| Manufacturer | Toshiba | TOSHIBA | - |
| Product Category | Bipolar Transistors - BJT | Transistors (BJT) - Arrays | - |
| RoHS | Y | - | - |
| Technology | Si | - | - |
| Mounting Style | SMD/SMT | - | - |
| Package / Case | SOT-563-6 | - | - |
| Transistor Polarity | NPN, PNP | - | - |
| Configuration | Dual | - | - |
| Collector Emitter Voltage VCEO Max | 50 V | - | - |
| Collector Base Voltage VCBO | 60 V, - 50 V | - | - |
| Emitter Base Voltage VEBO | 5 V | - | - |
| Collector Emitter Saturation Voltage | 100 mV | - | - |
| Maximum DC Collector Current | 150 mA | - | - |
| Gain Bandwidth Product fT | 80 MHz, 80 MHz | - | - |
| Maximum Operating Temperature | + 150 C | - | - |
| Series | HN1B04 | - | - |
| DC Current Gain hFE Max | 400 | - | - |
| Packaging | Reel | - | - |
| Brand | Toshiba | - | - |
| DC Collector/Base Gain hfe Min | 120 | - | - |
| Pd Power Dissipation | 100 mW | - | - |
| Product Type | BJTs - Bipolar Transistors | - | - |
| Factory Pack Quantity | 4000 | - | - |
| Subcategory | Transistors | - | - |
| Unit Weight | 0.000106 oz | - | - |
| Hersteller | Teil # | Beschreibung | RFQ |
|---|---|---|---|
Toshiba |
HN1B04FE-Y,LF | Bipolar Transistors - BJT Transistor for Low Freq Sm-Signal Amp | |
| HN1B04FE-YLFCT-ND | Neu und Original | ||
| HN1B04FE-YLFDKR-ND | Neu und Original | ||
| HN1B04FE-YLFTR-ND | Neu und Original | ||
| HN1B04FE-Y | Neu und Original | ||
| HN1B04FE-Y TE85L | Neu und Original | ||
| HN1B04FE-YLF | Trans GP BJT NPN/PNP 50V 0.15A 6-Pin SC-107C Emboss T/R - Tape and Reel (Alt: HN1B04FE-Y,LF) |