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SQ2389ES-T1_GE3

SQ2389ES-T1_GE3
Mfr. #:
SQ2389ES-T1_GE3
Hersteller:
Vishay / Siliconix
Beschreibung:
MOSFET -40V Vds +/-20V Vgs AEC-Q101 Qualified
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
SQ2389ES-T1_GE3 Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
SQ2389ES-T1_GE3 DatasheetSQ2389ES-T1_GE3 Datasheet (P4-P6)SQ2389ES-T1_GE3 Datasheet (P7-P9)SQ2389ES-T1_GE3 Datasheet (P10-P11)
ECAD Model:
Mehr Informationen:
SQ2389ES-T1_GE3 Mehr Informationen
Produkteigenschaft
Attributwert
Hersteller:
Vishay
Produktkategorie:
MOSFET
RoHS:
Y
Technologie:
Si
Montageart:
SMD/SMT
Paket / Koffer:
SOT-23-3
Anzahl der Kanäle:
1 Channel
Polarität des Transistors:
P-Kanal
Vds - Drain-Source-Durchbruchspannung:
40 V
Id - Kontinuierlicher Drainstrom:
4.1 A
Rds On - Drain-Source-Widerstand:
94 mOhms
Vgs th - Gate-Source-Schwellenspannung:
1.5 V
Vgs - Gate-Source-Spannung:
10 V
Qg - Gate-Ladung:
8.2 nC
Minimale Betriebstemperatur:
- 55 C
Maximale Betriebstemperatur:
+ 175 C
Pd - Verlustleistung:
3 W
Aufbau:
Single
Kanalmodus:
Erweiterung
Qualifikation:
AEC-Q101
Handelsname:
TrenchFET
Verpackung:
Spule
Serie:
SQ
Transistortyp:
1 P-Channel
Marke:
Vishay / Siliconix
Vorwärtstranskonduktanz - Min:
5 S
Abfallzeit:
4 ns
Produktart:
MOSFET
Anstiegszeit:
12 ns
Werkspackungsmenge:
3000
Unterkategorie:
MOSFETs
Typische Ausschaltverzögerungszeit:
16 ns
Typische Einschaltverzögerungszeit:
7 ns
Gewichtseinheit:
0.000282 oz
Tags
SQ238, SQ23, SQ2
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ure Electronics
P-Channel 60 V 0.94 Ohm 12 nC SMT Automotive Power Mosfet - SOT-23
***ical
Trans MOSFET P-CH 40V 4.1A Automotive 3-Pin SOT-23 T/R
***ponent Sense
MOSFET -40V Vds +/-20V Vgs AEC-Q101 Qualified
***et
Trans MOSFET P-CH 40V 4.1A 3-Pin TO-236 T/R
***ronik
P-CH 40V MosFet AECQ SOT-23
***Components
AEQC101 Qualified P-CHANNEL 40-V (D-S) 1
***i-Key
MOSFET P-CHAN 40V SO23
***
P-CHANNEL 40-V (D-S)
***ark
Mosfet, Aec-Q101, N-Ch, 60V, 2.3A, Sot-23; Transistor Polarity:n Channel; Continuous Drain Current Id:2.3A; Drain Source Voltage Vds:60V; On Resistance Rds(On):0.125Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:2V; Power Rohs Compliant: Yes
***ment14 APAC
Prices include import duty and tax. MOSFET, AUTO, P-CH, 60V, 2.3A, SOT-23; Transistor Polarity:P Channel; Continuous Drain Current Id:4.1A; Drain Source Voltage Vds:40V; On Resistance Rds(on):94mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:2V; Power Dissipation Pd:3.3W; Transistor Case Style:SOT-23; No. of Pins:3Pins; Operating Temperature Max:175°C; Product Range:TrenchFET Series; Automotive Qualification Standard:AEC-Q101; MSL:MSL 3 - 168 hours; SVHC:No SVHC (17-Dec-2015)
***nell
MOSFET, AUTO, CA-P, 60V, 2,3A, SOT-23; Polarità Transistor:Canale P; Corrente Continua di Drain Id:4.1A; Tensione Drain Source Vds:40V; Resistenza di Attivazione Rds(on):94mohm; Tensione Vgs di Misura Rds(on):10V; Tensione di Soglia Vgs:2V; Dissipazione di Potenza Pd:3.3W; Modello Case Transistor:SOT-23; No. di Pin:3Pin; Temperatura di Esercizio Max:175°C; Gamma Prodotti:TrenchFET Series; Standard di Qualifica Automotive:AEC-Q101; Livello di Sensibilità all'Umidità (MSL):MSL 3 - 168 ore; Sostanze Estremamente Preoccupanti (SVHC):No SVHC (17-Dec-2015)
SQ Automotive Power MOSFETs
Vishay / Siliconix SQ Automotive Power MOSFETs are AEC-Q101 qualified that are produced using a special process design that is optimized for use in the automotive industry. These SQ MOSFETs feature low ON-resistance N- and P-channel TrenchFET® technologies and low thermal resistance. The SQ MOSFETs are available in a wide variety of packages for design flexibility. Packages include the TO-252, TO-262, TO-263, PowerPAK SO-8, D2PAK (TO-263), DPAK, and PowerPAK 1212-8W as well as several space-saving, small-outline options. A full range of polarity options is also available, including N-channel and P-Channel co-packages.
Teil # Mfg. Beschreibung Aktie Preis
SQ2389ES-T1-GE3
DISTI # V72:2272_14664715		Vishay IntertechnologiesP-CHANNEL 40-V (D-S) 175C MOSF3
  • 1:$0.4928
SQ2389ES-T1_GE3
DISTI # SQ2389ES-T1_GE3CT-ND		Vishay SiliconixMOSFET P-CHAN 40V SO23
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		38155In Stock
  • 1000:$0.2774
  • 500:$0.3589
  • 100:$0.4895
  • 10:$0.6530
  • 1:$0.7700
SQ2389ES-T1_GE3
DISTI # SQ2389ES-T1_GE3DKR-ND		Vishay SiliconixMOSFET P-CHAN 40V SO23
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		38155In Stock
  • 1000:$0.2774
  • 500:$0.3589
  • 100:$0.4895
  • 10:$0.6530
  • 1:$0.7700
SQ2389ES-T1_GE3
DISTI # SQ2389ES-T1_GE3TR-ND		Vishay SiliconixMOSFET P-CHAN 40V SO23
RoHS: Compliant
Min Qty: 3000
Container: Tape & Reel (TR)		36000In Stock
  • 3000:$0.2455
SQ2389ES-T1_GE3
DISTI # C1S803604254956		Vishay IntertechnologiesMOSFETs3
  • 10:$0.4061
SQ2389ES-T1-GE3
DISTI # SQ2389ES-T1_GE3		Vishay IntertechnologiesTrans MOSFET P-CH 40V 4.1A 3-Pin TO-236 T/R (Alt: SQ2389ES-T1_GE3)
RoHS: Compliant
Min Qty: 3000
Container: Tape and Reel		Europe - 15000
  • 3000:€0.4009
  • 6000:€0.2739
  • 12000:€0.2349
  • 18000:€0.2169
  • 30000:€0.2019
SQ2389ES-T1-GE3
DISTI # SQ2389ES-T1_GE3		Vishay IntertechnologiesTrans MOSFET P-CH 40V 4.1A 3-Pin TO-236 T/R (Alt: SQ2389ES-T1_GE3)
RoHS: Compliant
Min Qty: 3000
Container: Tape and Reel		Asia - 15000
  • 3000:$0.2016
  • 6000:$0.1551
  • 9000:$0.1234
  • 15000:$0.1043
  • 30000:$0.0960
  • 75000:$0.0930
  • 150000:$0.0903
SQ2389ES-T1-GE3
DISTI # SQ2389ES-T1_GE3		Vishay IntertechnologiesTrans MOSFET P-CH 40V 4.1A 3-Pin TO-236 T/R - Tape and Reel (Alt: SQ2389ES-T1_GE3)
RoHS: Not Compliant
Min Qty: 3000
Container: Reel		Americas - 0
  • 3000:$0.2089
  • 6000:$0.2029
  • 12000:$0.1949
  • 18000:$0.1889
  • 30000:$0.1839
SQ2389ES-T1_GE3
DISTI # 96Y9640		Vishay IntertechnologiesMOSFET, AEC-Q101, N-CH, 60V, 2.3A, SOT-23,Transistor Polarity:N Channel,Continuous Drain Current Id:2.3A,Drain Source Voltage Vds:60V,On Resistance Rds(on):0.125ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:2V,Power , RoHS Compliant: Yes41629
  • 1:$0.6900
  • 10:$0.5200
  • 25:$0.4750
  • 50:$0.4310
  • 100:$0.3860
  • 250:$0.3520
  • 500:$0.3170
  • 1000:$0.2450
SQ2389ES-T1_GE3
DISTI # 78-SQ2389ES-T1_GE3		Vishay IntertechnologiesMOSFET -40V Vds +/-20V Vgs AEC-Q101 Qualified
RoHS: Compliant		62811
  • 1:$0.6900
  • 10:$0.5200
  • 100:$0.3860
  • 500:$0.3170
  • 1000:$0.2450
  • 3000:$0.2240
  • 6000:$0.2090
  • 9000:$0.1950
  • 24000:$0.1880
SQ2389ES-T1_GE3Vishay IntertechnologiesP-Channel 60 V 0.94 Ohm 12 nC SMT Automotive Power Mosfet - SOT-23
RoHS: Compliant		12000Reel
  • 3000:$0.3200
SQ2389ES-T1_GE3
DISTI # TMOS1334		Vishay IntertechnologiesP-CH 40V MosFet AECQ SOT-23
RoHS: Compliant		Stock DE - 0Stock US - 0
  • 3000:$0.2346
SQ2389ES-T1_GE3
DISTI # XSFP00000114848		Vishay Siliconix 
RoHS: Compliant		18171
  • 3000:$0.6400
  • 18171:$0.5818
SQ2389ES-T1 GE3Vishay IntertechnologiesP-CHANNEL 40-V (D-S)
RoHS: Compliant		Americas - 69000
  • 3000:$0.2520
SQ2389ES-T1-GE3Vishay IntertechnologiesMOSFET P-CHANNEL 40-V (D-S)
RoHS: Compliant		Americas - 69000
  • 3000:$0.2520
SQ2389ES-T1_GE3
DISTI # 2617106		Vishay IntertechnologiesMOSFET, AUTO, P-CH, 60V, 2.3A, SOT-23
RoHS: Compliant		44960
  • 5:£0.4570
  • 25:£0.4250
  • 100:£0.3010
  • 250:£0.2740
  • 500:£0.2460
SQ2389ES-T1_GE3
DISTI # 2617106		Vishay IntertechnologiesMOSFET, AUTO, P-CH, 60V, 2.3A, SOT-23
RoHS: Compliant		41629
  • 1:$1.1000
  • 10:$0.8240
  • 100:$0.6120
  • 500:$0.5020
  • 1000:$0.3880
  • 3000:$0.3550
  • 6000:$0.3310
  • 9000:$0.3090
Bild Teil # Beschreibung
CAV24C32WE-GT3

Mfr.#: CAV24C32WE-GT3

OMO.#: OMO-CAV24C32WE-GT3

 EEPROM 32KB I2C SER EEPROM
IXDD614SI

Mfr.#: IXDD614SI

OMO.#: OMO-IXDD614SI

 Gate Drivers 14-Ampere Low-Side Ultrafast MOSFET
2V7002LT1G

Mfr.#: 2V7002LT1G

OMO.#: OMO-2V7002LT1G

 MOSFET NFET 60V 115MA 7.5O
TPS72301QDBVRQ1

Mfr.#: TPS72301QDBVRQ1

OMO.#: OMO-TPS72301QDBVRQ1

 LDO Voltage Regulators AC Sgl Output LDO
AC0402FR-0722RL

Mfr.#: AC0402FR-0722RL

OMO.#: OMO-AC0402FR-0722RL

 Thick Film Resistors - SMD 1/16W 22ohm 1% AEC-Q200
AC0603JR-073R3L

Mfr.#: AC0603JR-073R3L

OMO.#: OMO-AC0603JR-073R3L

 Thick Film Resistors - SMD 1/10W 3.3ohm 5% AEC-Q200
IXDD614SI

Mfr.#: IXDD614SI

OMO.#: OMO-IXDD614SI-IXYS-INTEGRATED-CIRCUITS-DIVIS

 Gate Drivers 14-Ampere Low-Side Ultrafast MOSFET
06035C103KAT2A

Mfr.#: 06035C103KAT2A

OMO.#: OMO-06035C103KAT2A-AVX

 Multilayer Ceramic Capacitors MLCC - SMD/SMT 0603 0.01uF 50volts X7R 10%
TPS72301QDBVRQ1

Mfr.#: TPS72301QDBVRQ1

OMO.#: OMO-TPS72301QDBVRQ1-TEXAS-INSTRUMENTS

 LDO Voltage Regulators AC Sgl Output LDO
AC0603JR-073R3L

Mfr.#: AC0603JR-073R3L

OMO.#: OMO-AC0603JR-073R3L-YAGEO

 Thick Film Resistors - SMD 1/10W 3.3ohm 5%
Verfügbarkeit
Aktie:
69
Auf Bestellung:
2052
Menge eingeben:
Der aktuelle Preis von SQ2389ES-T1_GE3 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
Referenzpreis (USD)
Menge
Stückpreis
ext. Preis
1
0,68 $
0,68 $
10
0,52 $
5,19 $
100
0,38 $
38,50 $
500
0,32 $
158,00 $
1000
0,24 $
244,00 $
Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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