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IPB009N03LGATMA1

IPB009N03LGATMA1
Mfr. #:
IPB009N03LGATMA1
Hersteller:
Infineon Technologies
Beschreibung:
MOSFET N-Ch 30V 180A D2PAK-6 OptiMOS 3
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
IPB009N03LGATMA1 Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
IPB009N03LGATMA1 DatasheetIPB009N03LGATMA1 Datasheet (P4-P6)IPB009N03LGATMA1 Datasheet (P7-P9)
ECAD Model:
Produkteigenschaft
Attributwert
Hersteller:
Infineon
Produktkategorie:
MOSFET
RoHS:
Y
Technologie:
Si
Montageart:
SMD/SMT
Paket / Koffer:
TO-263-7
Anzahl der Kanäle:
1 Channel
Polarität des Transistors:
N-Kanal
Vds - Drain-Source-Durchbruchspannung:
30 V
Id - Kontinuierlicher Drainstrom:
180 A
Rds On - Drain-Source-Widerstand:
700 mOhms
Vgs th - Gate-Source-Schwellenspannung:
1 V
Vgs - Gate-Source-Spannung:
20 V
Qg - Gate-Ladung:
227 nC
Minimale Betriebstemperatur:
- 55 C
Maximale Betriebstemperatur:
+ 175 C
Pd - Verlustleistung:
250 W
Aufbau:
Single
Kanalmodus:
Erweiterung
Handelsname:
OptiMOS
Verpackung:
Spule
Höhe:
4.4 mm
Länge:
10 mm
Serie:
OptiMOS 3
Transistortyp:
1 N-Channel
Breite:
9.25 mm
Marke:
Infineon-Technologien
Vorwärtstranskonduktanz - Min:
180 S
Abfallzeit:
22 ns
Produktart:
MOSFET
Anstiegszeit:
14 ns
Werkspackungsmenge:
1000
Unterkategorie:
MOSFETs
Typische Ausschaltverzögerungszeit:
103 ns
Typische Einschaltverzögerungszeit:
26 ns
Teil # Aliase:
G IPB009N03L IPB9N3LGXT SP000394657
Tags
IPB009N03LG, IPB00, IPB0, IPB
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ure Electronics
Single N-Channel 30 V 0.95 mOhm 227 nC OptiMOS™ Power Mosfet - D2PAK-7
***ineon
With the new OptiMOS3 30V product family, Infineon sets new standards in power density and energy efficiency for discrete power MOSFETs. Lowest on-state resistance in small footprint packages make OptiMOS3 30V the best choice for the demanding requirements of battery management, OR-ing, e-fuse and hot-swap application. | Summary of Features: Lowest on-state resistance; High DC and pulsed current capability; Easy to design-in | Benefits: Increased battery lifetime and system efficiency; Saving space (reducing the number of devices needed); Saving costs | Target Applications: Or-ing in power supply; Hot-swap; e-fuse; Battery management
***ment14 APAC
MOSFET, N CH, 180A, 30V, PG-TO263-7; Transistor Polarity:N Channel; Continuous Drain Current Id:180A; Drain Source Voltage Vds:30V; On Resistance Rds(on):700µohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:250W; Operating Temperature Range:-55°C to +175°C; Transistor Case Style:TO-263; No. of Pins:7; SVHC:No SVHC (20-Jun-2011); Current Id Max:180A; Power Dissipation Pd:250W; Transistor Type:Power MOSFET; Voltage Vgs Max:20V
Teil # Mfg. Beschreibung Aktie Preis
IPB009N03LGATMA1
DISTI # V72:2272_06377968		Infineon Technologies AGTrans MOSFET N-CH 30V 180A 7-Pin(6+Tab) D2PAK T/R
RoHS: Compliant		1383
  • 1000:$1.6010
  • 500:$1.6500
  • 250:$1.6980
  • 100:$1.7470
  • 25:$1.9410
  • 10:$2.1570
  • 1:$2.3460
IPB009N03LGATMA1
DISTI # V36:1790_06377968		Infineon Technologies AGTrans MOSFET N-CH 30V 180A 7-Pin(6+Tab) D2PAK T/R
RoHS: Compliant		0
    IPB009N03LGATMA1
    DISTI # IPB009N03LGATMA1CT-ND    		Infineon Technologies AGMOSFET N-CH 30V 180A TO263-7
    RoHS: Compliant
    Min Qty: 1
    Container: Cut Tape (CT)    		1934In Stock
    • 500:$2.3594
    • 100:$2.9138
    • 10:$3.5530
    • 1:$3.9800
    IPB009N03LGATMA1
    DISTI # IPB009N03LGATMA1DKR-ND    		Infineon Technologies AGMOSFET N-CH 30V 180A TO263-7
    RoHS: Compliant
    Min Qty: 1
    Container: Digi-Reel®    		1934In Stock
    • 500:$2.3594
    • 100:$2.9138
    • 10:$3.5530
    • 1:$3.9800
    IPB009N03LGATMA1
    DISTI # IPB009N03LGATMA1TR-ND    		Infineon Technologies AGMOSFET N-CH 30V 180A TO263-7
    RoHS: Compliant
    Min Qty: 1000
    Container: Tape & Reel (TR)    		1000In Stock
    • 5000:$1.7663
    • 2000:$1.8353
    • 1000:$1.9319
    IPB009N03LGATMA1
    DISTI # 26194931    		Infineon Technologies AGTrans MOSFET N-CH 30V 180A 7-Pin(6+Tab) D2PAK T/R
    RoHS: Compliant    		1383
    • 1000:$1.7211
    • 500:$1.7737
    • 250:$1.8254
    • 100:$1.8780
    • 25:$2.0866
    • 10:$2.3188
    • 4:$2.5219
    IPB009N03LGXT
    DISTI # IPB009N03LGATMA1    		Infineon Technologies AGTrans MOSFET N-CH 30V 180A 7-Pin(6+Tab) TO-263 - Tape and Reel (Alt: IPB009N03LGATMA1)
    RoHS: Compliant
    Min Qty: 1000
    Container: Reel    		Americas - 1000
    • 1000:$1.8076
    • 2000:$1.7424
    • 4000:$1.6794
    • 6000:$1.6229
    • 10000:$1.5940
    IPB009N03LGATMA1
    DISTI # SP000394657    		Infineon Technologies AGTrans MOSFET N-CH 30V 180A 7-Pin TO-263 T/R (Alt: SP000394657)
    RoHS: Compliant
    Min Qty: 1000
    Container: Tape and Reel    		Europe - 0
    • 1000:€1.8900
    • 2000:€1.5900
    • 4000:€1.4900
    • 6000:€1.3900
    • 10000:€1.2900
    IPB009N03LGATMA1.
    DISTI # 15AC3078    		Infineon Technologies AGTransistor Polarity:N Channel,Continuous Drain Current Id:180A,Drain Source Voltage Vds:30V,On Resistance Rds(on):700µohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:-,Power Dissipation Pd:250W,No. of Pins:7Pins RoHS Compliant: Yes0
    • 10000:$1.6000
    • 6000:$1.6300
    • 4000:$1.6800
    • 2000:$1.7500
    • 1:$1.8100
    IPB009N03LGATMA1
    DISTI # 726-IPB009N03LGATMA1    		Infineon Technologies AGMOSFET N-Ch 30V 180A D2PAK-6 OptiMOS 3
    RoHS: Compliant    		1000
    • 1:$3.3200
    • 10:$2.8200
    • 100:$2.4400
    • 250:$2.3200
    • 500:$2.0800
    • 1000:$1.7500
    • 2000:$1.6600
    • 5000:$1.6000
    IPB009N03L G
    DISTI # 726-IPB009N03LG    		Infineon Technologies AGMOSFET N-Ch 30V 180A D2PAK-6 OptiMOS 3
    RoHS: Compliant    		424
    • 1:$3.3200
    • 10:$2.8200
    • 100:$2.4400
    • 250:$2.3200
    • 500:$2.0800
    • 1000:$1.7500
    • 2000:$1.6600
    • 5000:$1.6000
    IPB009N03LGATMA1
    DISTI # 7545406P    		Infineon Technologies AGMOSFET N-CH 30V 180A OPTIMOS3 TO263-7, RL899
    • 500:£1.5200
    • 250:£1.6900
    • 50:£1.8700
    • 10:£2.0500
    IPB009N03LGATMA1
    DISTI # 1775514    		Infineon Technologies AGMOSFET, N CH, 180A, 30V, PG-TO263-7
    RoHS: Compliant    		1886
    • 500:£1.5300
    • 250:£1.7000
    • 100:£1.7900
    • 10:£2.0600
    • 1:£2.8800
    IPB009N03LGATMA1
    DISTI # 1775514    		Infineon Technologies AGMOSFET, N CH, 180A, 30V, PG-TO263-7
    RoHS: Compliant    		500
    • 5000:$2.4100
    • 2000:$2.5000
    • 1000:$2.6400
    • 500:$3.1300
    • 250:$3.5000
    • 100:$3.6800
    • 10:$4.2500
    • 1:$5.0000
    Bild Teil # Beschreibung
    IPB009N03LGATMA1

    Mfr.#: IPB009N03LGATMA1

    OMO.#: OMO-IPB009N03LGATMA1

    		 MOSFET N-Ch 30V 180A D2PAK-6 OptiMOS 3
    IPB009N03L G

    Mfr.#: IPB009N03L G

    OMO.#: OMO-IPB009N03L-G

    		 MOSFET N-Ch 30V 180A D2PAK-6 OptiMOS 3
    IPB009N03LGATMA1

    Mfr.#: IPB009N03LGATMA1

    OMO.#: OMO-IPB009N03LGATMA1-INFINEON-TECHNOLOGIES

    		 MOSFET N-CH 30V 180A TO263-7
    IPB009N03L

    Mfr.#: IPB009N03L

    OMO.#: OMO-IPB009N03L-1190

    		 Neu und Original
    IPB009N03L G

    Mfr.#: IPB009N03L G

    OMO.#: OMO-IPB009N03L-G-1190

    		 Trans MOSFET N-CH 30V 180A 7-Pin TO-263 T/R (Alt: IPB009N03L G)
    IPB009N03LG

    Mfr.#: IPB009N03LG

    OMO.#: OMO-IPB009N03LG-1190

    		 MOSFET N-CH 30V 180A OPTIMOS3 TO263-7, RL
    Verfügbarkeit
    Aktie:
    900
    Auf Bestellung:
    2883
    Menge eingeben:
    Der aktuelle Preis von IPB009N03LGATMA1 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
    Referenzpreis (USD)
    Menge
    Stückpreis
    ext. Preis
    1
    3,32 $
    3,32 $
    10
    2,82 $
    28,20 $
    100
    2,44 $
    244,00 $
    250
    2,32 $
    580,00 $
    500
    2,08 $
    1 040,00 $
    Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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