 |  | |
| PartNumber | IPB009N03LGATMA1 | IPB009N03LG |
| Description | MOSFET N-Ch 30V 180A D2PAK-6 OptiMOS 3 | MOSFET N-CH 30V 180A OPTIMOS3 TO263-7, RL |
| Manufacturer | Infineon | - |
| Product Category | MOSFET | - |
| RoHS | Y | - |
| Technology | Si | - |
| Mounting Style | SMD/SMT | - |
| Package / Case | TO-263-7 | - |
| Number of Channels | 1 Channel | - |
| Transistor Polarity | N-Channel | - |
| Vds Drain Source Breakdown Voltage | 30 V | - |
| Id Continuous Drain Current | 180 A | - |
| Rds On Drain Source Resistance | 700 mOhms | - |
| Vgs th Gate Source Threshold Voltage | 1 V | - |
| Vgs Gate Source Voltage | 20 V | - |
| Qg Gate Charge | 227 nC | - |
| Minimum Operating Temperature | - 55 C | - |
| Maximum Operating Temperature | + 175 C | - |
| Pd Power Dissipation | 250 W | - |
| Configuration | Single | - |
| Channel Mode | Enhancement | - |
| Tradename | OptiMOS | - |
| Packaging | Reel | - |
| Height | 4.4 mm | - |
| Length | 10 mm | - |
| Series | OptiMOS 3 | - |
| Transistor Type | 1 N-Channel | - |
| Width | 9.25 mm | - |
| Brand | Infineon Technologies | - |
| Forward Transconductance Min | 180 S | - |
| Fall Time | 22 ns | - |
| Product Type | MOSFET | - |
| Rise Time | 14 ns | - |
| Factory Pack Quantity | 1000 | - |
| Subcategory | MOSFETs | - |
| Typical Turn Off Delay Time | 103 ns | - |
| Typical Turn On Delay Time | 26 ns | - |
| Part # Aliases | G IPB009N03L IPB9N3LGXT SP000394657 | - |
| Hersteller | Teil # | Beschreibung | RFQ |
|---|---|---|---|
Infineon Technologies |
IPB009N03LGATMA1 | MOSFET N-Ch 30V 180A D2PAK-6 OptiMOS 3 | |
| IPB009N03LGATMA1 | MOSFET N-CH 30V 180A TO263-7 | ||
| IPB009N03LG | MOSFET N-CH 30V 180A OPTIMOS3 TO263-7, RL |