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FDMS8662

FDMS8662
Mfr. #:
FDMS8662
Hersteller:
ON Semiconductor
Beschreibung:
MOSFET N-CH 30V 28A POWER56
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
FDMS8662 Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
FDMS8662 DatasheetFDMS8662 Datasheet (P4-P6)FDMS8662 Datasheet (P7)
ECAD Model:
Produkteigenschaft
Attributwert
Tags
FDMS866, FDMS86, FDMS8, FDMS, FDM
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***inecomponents.com
30V, 49A, 2.0 m ohm,NCH, POWER TRENCH MOSFET
***r Electronics
Power Field-Effect Transistor, 49A I(D), 30V, 0.002ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MO-240AA
***el Electronic
Embedded - Microcontrollers 3 (168 Hours) 100-LQFP 80 64K x 8 Internal DMA, LCD, LVD, POR, PWM, WDT Surface Mount Tray 32-Bit IC MCU 32BIT 512KB FLASH 100QFP
***rchild Semiconductor
The FDMS8662 has been designed to minimize losses in powerconversion application. Advancements in both silicon andpackage technologies have been combined to offer the lowestrDS(on) while maintaining excellent switching performance.
***ure Electronics
Single N-Channel 30 V 2.5 W 61 nC PowerTrench Surface Mount Mosfet - POWER 56-8
***emi
N-Channel PowerTrench® MOSFET 30V, 175A, 1.8mΩ
***nell
MOSFET, N-CH, 30V, 175A, 83W, POWER 56; Transistor Polarity: N Channel; Continuous Drain Current Id: 175A; Drain Source Voltage Vds: 30V; On Resistance Rds(on): 0.0015ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 1.5V; Power Dissipation Pd: 83W; Transistor Case Style: Power 56; No. of Pins: 8Pins; Operating Temperature Max: 150°C; Product Range: PowerTrench Series; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018)
***r Electronics
Power Field-Effect Transistor, 30A I(D), 30V, 0.0018ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MO-240AA
***rchild Semiconductor
This N-Channel MOSFET has been designed specifically to improve the overall efficiency and to minimize switch node ringing of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low rDS(on), fast switching speed ang body diode reverse recovery performance.
***ure Electronics
Single N-Channel 30 V 1.5 mOhm 51 nC HEXFET® Power Mosfet - DirectFET®
***ineon SCT
A 30V Single N-Channel HEXFET Power MOSFET in a DirectFET MT package rated at 34 amperes optimized with low on resistance., DIRECTFET, RoHS
***nell
MOSFET, N-CH, 30V, 192A, DIRECTFET MT-7; Transistor Polarity: N Channel; Continuous Drain Current Id: 192A; Drain Source Voltage Vds: 30V; On Resistance Rds(on): 0.; Available until stocks are exhausted Alternative available
***ineon
Benefits: Ultra-low RDS(on); Low Profile (less than 0.7 mm); Dual Sided Cooling Compatible; Ultra-low Package Inductance; Optimized for high speed switching or high current switch (Power Tool); Low Conduction and Switching Losses; Compatible with existing Surface Mount Techniques; StrongIRFET | Target Applications: Battery Operated Drive; Battery Protection; eFuse; Full-Bridge; Isolated Primary Side MOSFETs; Isolated Secondary Side SyncRec MOSFETs; Load Switch High Side; Load Switch Low Side; ORing; Point of Load SyncFET; Push-Pull
***ical
Trans MOSFET N-CH 30V 35A 8-Pin HSOP EP T/R
***nell
MOSFET, N-CH, 30V, 35A, HSOP; Transistor Polarity: N Channel; Continuous Drain Current Id: 35A; Drain Source Voltage Vds: 30V; On Resistance Rds(on): 0.0012ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 2.5V; Power Dissipation Pd: 35W; Transistor Case Style: HSOP; No. of Pins: 8Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2018)
***i-Key
MOSFET N-CH 30V 35A 8HSOP
***ical
Trans MOSFET N-CH Si 30V 31A 8-Pin Power 56 T/R
***r Electronics
Power Field-Effect Transistor, 31A I(D), 30V, 0.0018ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MO-240AA
***nell
MOSFET, N CH, 30V, 49A, POWER56; Transistor Polarity:N Channel; Continuous Drain Current Id:49A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.0013ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:1.6V; Power Dissipation Pd:96W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:Power 56; No. of Pins:8; MSL:MSL 1 - Unlimited; SVHC:No SVHC (19-Dec-2012)
***rchild Semiconductor
The FDMS7656AS has been designed to minimize losses in power conversion application. Advancements in both silicon and package technologies have been combined to offer the lowest rDS(on)while maintaining excellent switching performance. This device has the added benefit of an efficient monolithic Schottky body diode.
***et Europe
4.5V DRIVE NCH MOSFET, HSOP8(SINGLE), NCH, DISCRETE
***ical
Trans MOSFET N-CH 30V 32A 8-Pin HSOP EP T/R
*** Services
CoC and 2-years warranty / RFQ for pricing
***emi
N-Channel Power Trench® SyncFET™, Dual Cool™ 30V, 90A, 1.9mΩ
***r Electronics
Power Field-Effect Transistor, 34A I(D), 30V, 0.0019ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MO-240AA
***rchild Semiconductor
This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced Power Trench® process. Advancements in both silicon and Dual Cool™ package technologies have been combined to offer the lowest rDS(on) while maintaining excellent switching performance by extremely low Junction-to-Ambient thermal resistance. This device has the added benefit of an efficient monolithic Schottky body diode.
Teil # Mfg. Beschreibung Aktie Preis
FDMS8662
DISTI # FDMS8662TR-ND		ON SemiconductorMOSFET N-CH 30V 28A POWER56
RoHS: Compliant
Min Qty: 3000
Container: Tape & Reel (TR)		Limited Supply - Call
    FDMS8662
    DISTI # FDMS8662CT-ND    		ON SemiconductorMOSFET N-CH 30V 28A POWER56
    RoHS: Compliant
    Min Qty: 1
    Container: Cut Tape (CT)    		Limited Supply - Call
      FDMS8662
      DISTI # FDMS8662DKR-ND      		ON SemiconductorMOSFET N-CH 30V 28A POWER56
      RoHS: Compliant
      Min Qty: 1
      Container: Digi-Reel®      		Limited Supply - Call
        FDMS8662
        DISTI # FDMS8662        		ON SemiconductorTRANS MOSFET N-CH 30V 28A 8PIN PWR 56 - Bulk (Alt: FDMS8662)
        RoHS: Compliant
        Min Qty: 285
        Container: Bulk        		Americas - 0
        • 2850:$1.0859
        • 1425:$1.1129
        • 855:$1.1279
        • 570:$1.1419
        • 285:$1.1499
        FDMS8662
        DISTI # 512-FDMS8662        		ON SemiconductorMOSFET 30V N-Channel PowerTrench
        RoHS: Compliant        		0
          FDMS8662Fairchild Semiconductor CorporationPower Field-Effect Transistor, 28A I(D), 30V, 0.002ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MO-240AA
          RoHS: Compliant          		2811
          • 1000:$1.1600
          • 500:$1.2200
          • 100:$1.2700
          • 25:$1.3200
          • 1:$1.4300
          FDMS8662Fairchild Semiconductor Corporation 25
            Bild Teil # Beschreibung
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            OMO.#: OMO-FDMS7650DC-ON-SEMICONDUCTOR

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            Mfr.#: FDMS3008SDC

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            Mfr.#: FDMS5672

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            Mfr.#: FDMS6673BZ

            OMO.#: OMO-FDMS6673BZ-ON-SEMICONDUCTOR

            		 MOSFET P-CH 30V 15.2A POWER56
            FDMS7570S

            Mfr.#: FDMS7570S

            OMO.#: OMO-FDMS7570S-ON-SEMICONDUCTOR

            		 MOSFET N-CH 25V 28A POWER56
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            Mfr.#: FDMS7580

            OMO.#: OMO-FDMS7580-ON-SEMICONDUCTOR

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            FDMS9620S , 1N5239B-TAP

            Mfr.#: FDMS9620S , 1N5239B-TAP

            OMO.#: OMO-FDMS9620S-1N5239B-TAP-1190

            		 Neu und Original
            Verfügbarkeit
            Aktie:
            Available
            Auf Bestellung:
            2000
            Menge eingeben:
            Der aktuelle Preis von FDMS8662 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
            Referenzpreis (USD)
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            Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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