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If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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| Teil # | Mfg. | Beschreibung | Aktie | Preis |
|---|---|---|---|---|
| SQM100N10-10-GE3 DISTI # V36:1790_09219223 | Vishay Intertechnologies | N-CHANNEL 100-V (D-S) 175C MOS RoHS: Compliant | 0 |
|
| SQM100N10-10_GE3 DISTI # SQM100N10-10_GE3 | Vishay Intertechnologies | Trans MOSFET N-CH 100V 100A 3-Pin(2+Tab) TO-263 - Bulk (Alt: SQM100N10-10_GE3) RoHS: Compliant Min Qty: 800 Container: Bulk | Americas - 0 |
|
| SQM100N10-10_GE3 DISTI # SQM100N10-10-GE3 | Vishay Intertechnologies | Trans MOSFET N-CH 100V 100A 3-Pin(2+Tab) TO-263 (Alt: SQM100N10-10-GE3) RoHS: Compliant Min Qty: 800 | Europe - 0 |
|
| SQM100N10-10_GE3 DISTI # 78-SQM100N10-10_GE3 | Vishay Intertechnologies | MOSFET 100V 100A 375W AEC-Q101 Qualified RoHS: Compliant | 800 |
|
| SQM100N10-10-GE3 DISTI # 78-SQM100N10-10-GE3 | Vishay Intertechnologies | MOSFET RECOMMENDED ALT 78-SQM100N10-10_GE3 RoHS: Compliant | 0 | |
| SQM100N10-10-GE3 | Vishay Siliconix | POWER FIELD-EFFECT TRANSISTOR, 100A I(D), 100V, 0.0105OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, TO-263AB | 783 |
|
| SQM100N1010GE3 | Vishay Intertechnologies | Power Field-Effect Transistor, 100A I(D), 100V, 0.0105ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB RoHS: Compliant | 800 |
| Bild | Teil # | Beschreibung |
|---|---|---|
|
Mfr.#: SQM100N02-3M5L_GE3 OMO.#: OMO-SQM100N02-3M5L-GE3 |
MOSFET N Ch 20Vds 20Vgs AEC-Q101 Qualified |
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Mfr.#: SQM100N10-10_GE3 OMO.#: OMO-SQM100N10-10-GE3-A5D |
MOSFET 100V 100A 375W AEC-Q101 Qualified |
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Mfr.#: SQM100N04-2m7_GE3 OMO.#: OMO-SQM100N04-2M7-GE3 |
MOSFET 40V 100A 157W AEC-Q101 Qualified |
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Mfr.#: SQM100N10-10-GE3 OMO.#: OMO-SQM100N10-10-GE3-045 |
MOSFET RECOMMENDED ALT 78-SQM100N10-10_GE3 |
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Mfr.#: SQM100N04-2M7-GE3 OMO.#: OMO-SQM100N04-2M7-GE3-1190 |
MOSFET RECOMMENDED ALT 78-SQM100N04-2M7_GE3 |
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Mfr.#: SQM100N04-2M7_GE3 OMO.#: OMO-SQM100N04-2M7-GE3-VISHAY |
MOSFET N-CH 40V 100A TO-263 |
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Mfr.#: SQM100N04-3M5 OMO.#: OMO-SQM100N04-3M5-1190 |
Neu und Original |
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Mfr.#: SQM100N04-3M5-GE3 OMO.#: OMO-SQM100N04-3M5-GE3-1190 |
MOSFET RECOMMENDED ALT 78-SQM100N04-2M7_GE3 |
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Mfr.#: SQM100N10-10_GE3 OMO.#: OMO-SQM100N10-10-GE3-VISHAY |
MOSFET N-CH 100V 100A TO-263 |
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Mfr.#: SQM100N1010GE3 OMO.#: OMO-SQM100N1010GE3-1190 |
Power Field-Effect Transistor, 100A I(D), 100V, 0.0105ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB |