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| Teil # | Mfg. | Beschreibung | Aktie | Preis |
|---|---|---|---|---|
| NE3515S02-T1D-A DISTI # NE3515S02-T1D-A-ND | California Eastern Laboratories (CEL) | FET RF HFET 12GHZ 2V 10MA S02 RoHS: Compliant Min Qty: 1 Container: Tape & Reel (TR) | Limited Supply - Call | |
| NE3515S02-T1D-A DISTI # 551-NE3515S02-T1D-A | California Eastern Laboratories (CEL) | RF JFET Transistors Super Low Noise Pseudomorphic RoHS: Compliant | 0 |
| Bild | Teil # | Beschreibung |
|---|---|---|
|
Mfr.#: NE3515S02-T1C-A OMO.#: OMO-NE3515S02-T1C-A |
RF JFET Transistors Super Low Noise Pseudomorphic |
|
|
Mfr.#: NE3515S02-A OMO.#: OMO-NE3515S02-A |
RF JFET Transistors X to Ku-BAND SUPER LOW NOISE AMP N-CH |
|
|
Mfr.#: NE3515S02-T1D-A OMO.#: OMO-NE3515S02-T1D-A |
RF JFET Transistors Super Low Noise Pseudomorphic |
|
Mfr.#: NE3515S02-T1D-A OMO.#: OMO-NE3515S02-T1D-A-CEL |
RF JFET Transistors Super Low Noise Pseudomorphic |
|
Mfr.#: NE3515S02-A OMO.#: OMO-NE3515S02-A-CEL |
RF JFET Transistors X to Ku-BAND SUPER LOW NOISE AMP N-CH |
|
|
Mfr.#: NE3515S02-T1C-A OMO.#: OMO-NE3515S02-T1C-A-CEL |
RF JFET Transistors Super Low Noise Pseudomorphic |
|
|
Mfr.#: NE3515S02 OMO.#: OMO-NE3515S02-1190 |
Neu und Original |
