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IXYH20N120C3

IXYH20N120C3
Mfr. #:
IXYH20N120C3
Hersteller:
Littelfuse
Beschreibung:
IGBT Transistors GenX3 1200V XPT IGBT
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
IXYH20N120C3 Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
IXYH20N120C3 DatasheetIXYH20N120C3 Datasheet (P4-P6)
ECAD Model:
Mehr Informationen:
IXYH20N120C3 Mehr Informationen
Produkteigenschaft
Attributwert
Hersteller:
IXYS
Produktkategorie:
IGBT-Transistoren
Technologie:
Si
Paket / Koffer:
TO-247AD-3
Montageart:
Durchgangsloch
Aufbau:
Single
Kollektor- Emitterspannung VCEO Max:
1200 V
Kollektor-Emitter-Sättigungsspannung:
4 V
Maximale Gate-Emitter-Spannung:
30 V
Kontinuierlicher Kollektorstrom bei 25 C:
40 A
Pd - Verlustleistung:
278 W
Minimale Betriebstemperatur:
- 55 C
Maximale Betriebstemperatur:
+ 175 C
Serie:
IXYH20N120
Verpackung:
Rohr
Kontinuierlicher Kollektorstrom Ic Max:
40 A
Marke:
IXYS
Gate-Emitter-Leckstrom:
100 nA
Produktart:
IGBT-Transistoren
Werkspackungsmenge:
30
Unterkategorie:
IGBTs
Handelsname:
XPT
Gewichtseinheit:
1.340411 oz
Tags
IXYH20, IXYH2, IXYH, IXY
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***i-Key
IGBT 1200V 40A 278W TO-247AD
***ure Electronics
IGBT Transistors GenX3 1200V XPT IGBT
***(Formerly Allied Electronics)
Transistor; IGBT; TO-247AC; 45 A (Max.); 1200 V (Min.); 200 W (Max.); -55 degC
***p One Stop Global
Trans IGBT Chip N-CH 1200V 45A 200000mW 3-Pin(3+Tab) TO-247AC Tube
***ure Electronics
IRG4PH50U Series N-Channel 1.2 kV 45 A Ultrafast Speed IGBT - TO-247AC
***trelec
IGBT Housing type: TO-247AC Collector-emitter breakdown voltage: 1200 V Collector-emitter saturation voltage: 2.78 V Current release time: 280 ns Power dissipation: 200 W
***ment14 APAC
SINGLE IGBT, 1.2KV, 45A; Transistor Type; Transistor Type:IGBT; DC Collector Current:45A; Collector Emitter Voltage Vces:3.7V; Power Dissipation Pd:200W; Collector Emitter Voltage V(br)ceo:1.2kV; Transistor Case Style:TO-247AC; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Ic Continuous a Max:45A; Current Temperature:25°C; Fall Time Max:500ns; Full Power Rating Temperature:25°C; No. of Transistors:1; Package / Case:TO-247AC; Power Dissipation Max:200W; Power Dissipation Pd:200W; Power Dissipation Pd:200W; Pulsed Current Icm:180A; Rise Time:15ns; Termination Type:Through Hole; Transistor Polarity:N Channel; Voltage Vces:1.2kV
***ical
Trans IGBT Chip N-CH 1200V 45A 200000mW 3-Pin(3+Tab) TO-247AC Tube
***eco
Transistor IGBT Chip Negative Channel 1.2K Volt 45A 3-Pin(3+Tab) TO-247AC
***ineon SCT
1200V UltraFast 5-40 kHz Copack IGBT in a TO-247AC package, TO247COPAK-3, RoHS
***ure Electronics
IRG4PH50U series 1200 V 45 A Through Hole N-Channel UltraFast IGBT - TO-247AC
***trelec
IGBT Housing type: TO-247AC Collector-emitter breakdown voltage: 1200 V Collector-emitter saturation voltage: 2.56 V Current release time: 180 ns Power dissipation: 200 W
***nell
IGBT, 1200V, 45A, TO-247AC; Transistor Type:IGBT; Transistor Polarity:N Channel; Voltage, Vces:1200V; Current Ic Continuous a Max:45A; Voltage, Vce Sat Max:3.7V; Power Dissipation:200W; Case Style:TO-247AC; Termination Type:Through Hole; Collector-to-Emitter Breakdown Voltage:1200V; Current, Icm Pulsed:180A; No. of Pins:3; Power, Pd:200W; Temperature, Current:25°C; Temperature, Full Power Rating:25°C; Time, Fall Max:260ns; Time, Rise:24ns; Transistors, No. of:1
***ical
Trans IGBT Chip N-CH 1200V 45A 200000mW 3-Pin(3+Tab) TO-247AC Tube
***ineon SCT
1200V UltraFast 4-20 kHz Discrete IGBT in a TO-247AC package, TO247-3, RoHS
***trelec
IGBT Housing type: TO-247AC Collector-emitter breakdown voltage: 1200 V Collector-emitter saturation voltage: 3.5 V Current release time: 280 ns Power dissipation: 200 W
***nell
IGBT, 1.2KV, 45A, TO-247AC-3; DC Collector Current: 45A; Collector Emitter Saturation Voltage Vce(on): 3.28V; Power Dissipation Pd: 200W; Collector Emitter Voltage V(br)ceo: 1.2kV; Transistor Case Style: TO-247AC; No. of Pins
***ure Electronics
FGA20N120FTD Series 1200 V 40 A Field Stop Trench IGBT-TO-3PN
***ow.cn
Trans IGBT Chip N-CH 1200V 40A 298000mW 3-Pin(3+Tab) TO-3P Tube
***emi
IGBT, 1200V, 20A, Field Stop Trench
***ark
Igbt, 1.2Kv, 40A, 150Deg C, 298W Rohs Compliant: Yes
***r Electronics
Insulated Gate Bipolar Transistor, 40A I(C), 1200V V(BR)CES, N-Channel
*** Electronic Components
IGBT Transistors 1200V N-Chan Trench
***rchild Semiconductor
Using advanced field stop trench technology, Fairchild’s 1200V trench IGBTs offer superior conduction and switching performances for soft switching applications. The device can operate in parallel configuration with exceptional avalanche ruggedness. This device is designed for induction heating and microwave oven.
***ical
Trans IGBT Chip N-CH 1200V 30A 333000mW 3-Pin(3+Tab) TO-247 Tube
*** Stop Electro
Insulated Gate Bipolar Transistor, 30A I(C), 1200V V(BR)CES, N-Channel, TO-247AB
***emi
IGBT, 1200V, 15A, Field Stop Trench
***ark
RAIL/1200V 15A FS2 Trench IGBT
***el Electronic
IC REG LINEAR 24V 500MA TO252-3
***rchild Semiconductor
Using innovative field stop trench IGBT technology, Fairchild’s new series of field stop trench IGBTs offer the optimum performance for hard switching application such as solar inverter, UPS, welder and PFC applications.
***ical
Trans IGBT Chip N-CH 1200V 40A 180000mW 3-Pin(3+Tab) TO-247
***i-Key
IGBT 1200V 40A 180W TO247
***el Nordic
Contact for details
***ment14 APAC
IGBT,1200V,20A,TO-247; Transistor Type:IGBT; DC Collector Current:40A; Collector Emitter Voltage Vces:2.5V; Power Dissipation Pd:180W; Collector Emitter Voltage V(br)ceo:1.2kV; Operating Temperature Min:-55°C; Operating Temperature Max:150°C; Transistor Case Style:TO-247; No. of Pins:3; SVHC:No SVHC (19-Dec-2012); Operating Temperature Range:-55°C to +150°C; Power Dissipation Max:180W
1200V XPT™ High Speed IGBTs
IXYS 1200V XPT™ High Speed IGBTs are high speed, high-gain 1200V Insulated Gate Bipolar Transistor products. The 1200V XPT™ High Speed IGBTs feature high current ratings (105A - 160A, Tc = 25 degrees Centigrade) and are specifically optimized for reduced switching losses in high voltage applications that require hard-switching frequencies of up to 50 kHz. IXYS's 1200V XPT™ High Speed IGBTs have high-speed switching capabilities that allow customers to boost the power conversion efficiency of their designs and to use smaller, lighter and more cost-effective passive components. The resultant effect is a reduction in total system cost of ownership for these 1200V XPT™ High Speed IGBTs and a reduced PCB layout area.Learn More
Electrical Vehicle DC Fast Chargers
DC charging stations are designed to convert the electrical grid’s AC power into DC power that can then be fed directly into a vehicle’s battery system for fast charging – in 30 minutes or less. Because the conversion from AC to DC power is being done in the charging station, these units can provide higher levels of power (50kW to 350kW and beyond) to the vehicle compared to AC charging stations. Working with tens to hundreds of kilowatts of power, efficient conversion, reliability of the system, and user safety are critical.
Teil # Mfg. Beschreibung Aktie Preis
IXYH20N120C3D1
DISTI # 29499152		IXYS CorporationTrans IGBT Chip N-CH 1.2KV 36A Automotive 3-Pin(3+Tab) TO-247AD
RoHS: Compliant		120
  • 500:$6.4613
  • 250:$7.0862
  • 100:$7.4189
  • 50:$7.9834
  • 25:$8.5378
  • 10:$8.9510
  • 2:$9.9086
IXYH20N120C3D1
DISTI # IXYH20N120C3D1-ND		IXYS CorporationIGBT 1200V 36A 230W TO-247AD
RoHS: Compliant
Min Qty: 1
Container: Tube		60In Stock
  • 510:$6.7216
  • 270:$7.3720
  • 120:$8.0225
  • 30:$8.8897
  • 10:$9.7570
  • 1:$10.8400
IXYH20N120C3
DISTI # IXYH20N120C3-ND		IXYS CorporationIGBT 1200V 40A 278W TO-247AD
RoHS: Compliant
Min Qty: 30
Container: Tube		Temporarily Out of Stock
  • 30:$5.3867
IXYH20N120C3D1
DISTI # C1S331700091707		IXYS CorporationTrans IGBT Chip N-CH 1200V 36A 230000mW Automotive 3-Pin(3+Tab) TO-247AD
RoHS: Compliant		120
  • 100:$7.2100
  • 50:$9.4200
  • 10:$10.2000
  • 5:$12.4000
  • 1:$14.0000
IXYH20N120C3
DISTI # 747-IXYH20N120C3		IXYS CorporationIGBT Transistors GenX3 1200V XPT IGBT0
  • 30:$5.3900
  • 60:$5.1300
  • 120:$5.0600
  • 270:$4.5600
  • 510:$3.5900
  • 1020:$3.3500
IXYH20N120C3D1
DISTI # 747-IXYH20N120C3D1		IXYS CorporationIGBT Transistors XPT 1200V IGBT GenX3 XPT IGBT
RoHS: Compliant		31
  • 1:$10.8400
  • 10:$9.7600
  • 25:$8.8900
  • 50:$8.1200
  • 100:$8.0200
  • 250:$7.3100
  • 500:$6.7200
  • 1000:$5.8600
IXYH20N120C3
DISTI # 8080265P		IXYS CorporationIGBT N-CH 1200V 20A XPT GENX3 TO247AD, TU64
  • 10:£4.1100
  • 20:£3.9900
  • 60:£3.8650
  • 180:£3.3500
IXYH20N120C3D1
DISTI # 8080269P		IXYS CorporationIGBT 1200V 17A XPT GENX3 W/DIODE TO247AD, TU42
  • 5:£7.7300
  • 10:£7.3300
  • 30:£6.6700
  • 90:£6.3500
IXYH20N120C3
DISTI # IXYH20N120C3		IXYS Corporation1200V 40A 278W TO247AD
RoHS: Compliant		13
  • 1:€7.0000
  • 5:€4.0000
  • 30:€3.0000
  • 60:€2.9000
IXYH20N120C3D1
DISTI # 2782977		IXYS CorporationIGBT, SINGLE, 1.2KV, 36A, TO-247AD
RoHS: Compliant		16
  • 1:$14.0000
  • 5:$13.0900
  • 10:$11.5800
  • 50:$10.9500
  • 100:$10.3800
  • 250:$9.8700
IXYH20N120C3D1
DISTI # 2782977		IXYS CorporationIGBT, SINGLE, 1.2KV, 36A, TO-247AD
RoHS: Compliant		16
  • 1:£8.7600
  • 5:£8.2000
  • 10:£6.7300
  • 50:£6.1400
  • 100:£6.0700
IXYH20N120C3
DISTI # XSFP00000104374		IXYS Corporation 
RoHS: Compliant		404
  • 30:$4.9600
  • 404:$4.6500
Bild Teil # Beschreibung
MGJ2D051509SC

Mfr.#: MGJ2D051509SC

OMO.#: OMO-MGJ2D051509SC-MURATA-POWER-SOLUTIONS

 Isolated DC/DC Converters 2W 5Vin 15/-8.7Vout 80/40mA SIP
Verfügbarkeit
Aktie:
Available
Auf Bestellung:
2000
Menge eingeben:
Der aktuelle Preis von IXYH20N120C3 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
Referenzpreis (USD)
Menge
Stückpreis
ext. Preis
30
5,39 $
161,70 $
60
5,13 $
307,80 $
120
5,06 $
607,20 $
270
4,56 $
1 231,20 $
510
3,59 $
1 830,90 $
1020
3,35 $
3 417,00 $
2520
3,23 $
8 139,60 $
Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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