IXYH20N120C3D1 vs IXYH20N120C3 vs IXYH20N55

 
PartNumberIXYH20N120C3D1IXYH20N120C3IXYH20N55
DescriptionIGBT Transistors XPT 1200V IGBT GenX3 XPT IGBTIGBT Transistors GenX3 1200V XPT IGBT
ManufacturerIXYSIXYS-
Product CategoryIGBT TransistorsIGBT Transistors-
RoHSY--
TechnologySiSi-
Package / CaseTO-247AD-3TO-247AD-3-
Mounting StyleThrough HoleThrough Hole-
ConfigurationSingleSingle-
Collector Emitter Voltage VCEO Max1200 V1200 V-
Collector Emitter Saturation Voltage4 V4 V-
Maximum Gate Emitter Voltage30 V30 V-
Continuous Collector Current at 25 C36 A40 A-
Pd Power Dissipation230 W278 W-
Minimum Operating Temperature- 55 C- 55 C-
Maximum Operating Temperature+ 150 C+ 175 C-
SeriesIXYH20N120IXYH20N120-
PackagingTubeTube-
Continuous Collector Current Ic Max36 A40 A-
BrandIXYSIXYS-
Gate Emitter Leakage Current100 nA100 nA-
Product TypeIGBT TransistorsIGBT Transistors-
Factory Pack Quantity3030-
SubcategoryIGBTsIGBTs-
TradenameXPTXPT-
Unit Weight1.340411 oz1.340411 oz-
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