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IXYH20N120C3D1

IXYH20N120C3D1
Mfr. #:
IXYH20N120C3D1
Hersteller:
Littelfuse
Beschreibung:
IGBT Transistors XPT 1200V IGBT GenX3 XPT IGBT
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
IXYH20N120C3D1 Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
IXYH20N120C3D1 DatasheetIXYH20N120C3D1 Datasheet (P4-P6)IXYH20N120C3D1 Datasheet (P7)
ECAD Model:
Mehr Informationen:
IXYH20N120C3D1 Mehr Informationen
Produkteigenschaft
Attributwert
Hersteller:
IXYS
Produktkategorie:
IGBT-Transistoren
RoHS:
Y
Technologie:
Si
Paket / Koffer:
TO-247AD-3
Montageart:
Durchgangsloch
Aufbau:
Single
Kollektor- Emitterspannung VCEO Max:
1200 V
Kollektor-Emitter-Sättigungsspannung:
4 V
Maximale Gate-Emitter-Spannung:
30 V
Kontinuierlicher Kollektorstrom bei 25 C:
36 A
Pd - Verlustleistung:
230 W
Minimale Betriebstemperatur:
- 55 C
Maximale Betriebstemperatur:
+ 150 C
Serie:
IXYH20N120
Verpackung:
Rohr
Kontinuierlicher Kollektorstrom Ic Max:
36 A
Marke:
IXYS
Gate-Emitter-Leckstrom:
100 nA
Produktart:
IGBT-Transistoren
Werkspackungsmenge:
30
Unterkategorie:
IGBTs
Handelsname:
XPT
Gewichtseinheit:
1.340411 oz
Tags
IXYH20, IXYH2, IXYH, IXY
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ark
Igbt, Single, 1.2Kv, 36A, To 247Ad Rohs Compliant: Yes
***ical
Trans IGBT Chip N-CH 1200V 36A 230000mW 3-Pin(3+Tab) TO-247AD
***el Electronic
IGBT Transistors XPT 1200V IGBT GenX3 XPT IGBT
***nell
IGBT, SINGLE, 1.2KV, 36A, TO-247AD; DC Collector Current: 36A; Collector Emitter Saturation Voltage Vce(on): 4V; Power Dissipation Pd: 230W; Collector Emitter Voltage V(br)ceo: 1.2kV; Transistor Case Style: TO-247AD; No. of P
***(Formerly Allied Electronics)
Transistor; IGBT; TO-247AC; 45 A (Max.); 1200 V (Min.); 200 W (Max.); -55 degC
***p One Stop Global
Trans IGBT Chip N-CH 1200V 45A 200000mW 3-Pin(3+Tab) TO-247AC Tube
***ure Electronics
IRG4PH50U Series N-Channel 1.2 kV 45 A Ultrafast Speed IGBT - TO-247AC
***trelec
IGBT Housing type: TO-247AC Collector-emitter breakdown voltage: 1200 V Collector-emitter saturation voltage: 2.78 V Current release time: 280 ns Power dissipation: 200 W
***ment14 APAC
SINGLE IGBT, 1.2KV, 45A; Transistor Type; Transistor Type:IGBT; DC Collector Current:45A; Collector Emitter Voltage Vces:3.7V; Power Dissipation Pd:200W; Collector Emitter Voltage V(br)ceo:1.2kV; Transistor Case Style:TO-247AC; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Ic Continuous a Max:45A; Current Temperature:25°C; Fall Time Max:500ns; Full Power Rating Temperature:25°C; No. of Transistors:1; Package / Case:TO-247AC; Power Dissipation Max:200W; Power Dissipation Pd:200W; Power Dissipation Pd:200W; Pulsed Current Icm:180A; Rise Time:15ns; Termination Type:Through Hole; Transistor Polarity:N Channel; Voltage Vces:1.2kV
***ical
Trans IGBT Chip N-CH 1200V 45A 200000mW 3-Pin(3+Tab) TO-247AC Tube
***eco
Transistor IGBT Chip Negative Channel 1.2K Volt 45A 3-Pin(3+Tab) TO-247AC
***ineon SCT
1200V UltraFast 5-40 kHz Copack IGBT in a TO-247AC package, TO247COPAK-3, RoHS
***ure Electronics
IRG4PH50U series 1200 V 45 A Through Hole N-Channel UltraFast IGBT - TO-247AC
***trelec
IGBT Housing type: TO-247AC Collector-emitter breakdown voltage: 1200 V Collector-emitter saturation voltage: 2.56 V Current release time: 180 ns Power dissipation: 200 W
***nell
IGBT, 1200V, 45A, TO-247AC; Transistor Type:IGBT; Transistor Polarity:N Channel; Voltage, Vces:1200V; Current Ic Continuous a Max:45A; Voltage, Vce Sat Max:3.7V; Power Dissipation:200W; Case Style:TO-247AC; Termination Type:Through Hole; Collector-to-Emitter Breakdown Voltage:1200V; Current, Icm Pulsed:180A; No. of Pins:3; Power, Pd:200W; Temperature, Current:25°C; Temperature, Full Power Rating:25°C; Time, Fall Max:260ns; Time, Rise:24ns; Transistors, No. of:1
***ical
Trans IGBT Chip N-CH 1200V 45A 200000mW 3-Pin(3+Tab) TO-247AC Tube
***ineon SCT
1200V UltraFast 4-20 kHz Discrete IGBT in a TO-247AC package, TO247-3, RoHS
***trelec
IGBT Housing type: TO-247AC Collector-emitter breakdown voltage: 1200 V Collector-emitter saturation voltage: 3.5 V Current release time: 280 ns Power dissipation: 200 W
***nell
IGBT, 1.2KV, 45A, TO-247AC-3; DC Collector Current: 45A; Collector Emitter Saturation Voltage Vce(on): 3.28V; Power Dissipation Pd: 200W; Collector Emitter Voltage V(br)ceo: 1.2kV; Transistor Case Style: TO-247AC; No. of Pins
***ical
Trans IGBT Chip N-CH 1200V 36A 250000mW 3-Pin(3+Tab) TO-247 Tube
***ure Electronics
APT15GTxx Series 1200 V 36 A Through Hole Thunderbolt IGBT - TO-247-3
***rochip
IGBT NPT Medium Frequency Combi 1200 V 15 A TO-247
***et Europe
Thunderbolt IGBT N-Channel 1200V 36A 3-Pin TO-247
***th Star Micro
Insulated Gate Bipolar Transistor - NPT Standard Speed
***ure Electronics
IXDH20N120D1 Series 1200 V 38 A N-Channel High Voltage IGBT - TO-247AD
***ical
Trans IGBT Chip N-CH 1200V 38A 200000mW 3-Pin(3+Tab) TO-247AD
***trelec
IGBT Housing type: TO-247AD Collector-emitter breakdown voltage: 1200 V Collector-emitter saturation voltage: 2.4 V Current release time: 70 ns Power dissipation: 200 W
***icroelectronics
Trench gate field-stop IGBT, H series 1200 V, 15 A high speed
***ical
Trans IGBT Chip N-CH 1200V 30A 259000mW 3-Pin(3+Tab) TO-247 Tube
***r Electronics
Insulated Gate Bipolar Transistor, 30A I(C), 1200V V(BR)CES, N-Channel
***i-Key
IGBT H-SERIES 1200V 15A TO-247
Electrical Vehicle DC Fast Chargers
DC charging stations are designed to convert the electrical grid’s AC power into DC power that can then be fed directly into a vehicle’s battery system for fast charging – in 30 minutes or less. Because the conversion from AC to DC power is being done in the charging station, these units can provide higher levels of power (50kW to 350kW and beyond) to the vehicle compared to AC charging stations. Working with tens to hundreds of kilowatts of power, efficient conversion, reliability of the system, and user safety are critical.
Teil # Mfg. Beschreibung Aktie Preis
IXYH20N120C3D1
DISTI # 29499152		IXYS CorporationTrans IGBT Chip N-CH 1.2KV 36A Automotive 3-Pin(3+Tab) TO-247AD
RoHS: Compliant		120
  • 500:$6.4613
  • 250:$7.0862
  • 100:$7.4189
  • 50:$7.9834
  • 25:$8.5378
  • 10:$8.9510
  • 2:$9.9086
IXYH20N120C3D1
DISTI # IXYH20N120C3D1-ND		IXYS CorporationIGBT 1200V 36A 230W TO-247AD
RoHS: Compliant
Min Qty: 1
Container: Tube		60In Stock
  • 510:$6.7216
  • 270:$7.3720
  • 120:$8.0225
  • 30:$8.8897
  • 10:$9.7570
  • 1:$10.8400
IXYH20N120C3D1
DISTI # C1S331700091707		IXYS CorporationTrans IGBT Chip N-CH 1200V 36A 230000mW Automotive 3-Pin(3+Tab) TO-247AD
RoHS: Compliant		120
  • 100:$7.2100
  • 50:$9.4200
  • 10:$10.2000
  • 5:$12.4000
  • 1:$14.0000
IXYH20N120C3D1
DISTI # 747-IXYH20N120C3D1		IXYS CorporationIGBT Transistors XPT 1200V IGBT GenX3 XPT IGBT
RoHS: Compliant		31
  • 1:$10.8400
  • 10:$9.7600
  • 25:$8.8900
  • 50:$8.1200
  • 100:$8.0200
  • 250:$7.3100
  • 500:$6.7200
  • 1000:$5.8600
IXYH20N120C3D1
DISTI # 8080269P		IXYS CorporationIGBT 1200V 17A XPT GENX3 W/DIODE TO247AD, TU42
  • 5:£7.7300
  • 10:£7.3300
  • 30:£6.6700
  • 90:£6.3500
IXYH20N120C3D1
DISTI # 2782977		IXYS CorporationIGBT, SINGLE, 1.2KV, 36A, TO-247AD
RoHS: Compliant		16
  • 1:£8.7600
  • 5:£8.2000
  • 10:£6.7300
  • 50:£6.1400
  • 100:£6.0700
IXYH20N120C3D1
DISTI # 2782977		IXYS CorporationIGBT, SINGLE, 1.2KV, 36A, TO-247AD
RoHS: Compliant		16
  • 1:$14.0000
  • 5:$13.0900
  • 10:$11.5800
  • 50:$10.9500
  • 100:$10.3800
  • 250:$9.8700
Bild Teil # Beschreibung
IXDN609SIA

Mfr.#: IXDN609SIA

OMO.#: OMO-IXDN609SIA

 Gate Drivers 9-Ampere Low-Side Ultrafast MOSFET
VS-E5TX3012-N3

Mfr.#: VS-E5TX3012-N3

OMO.#: OMO-VS-E5TX3012-N3

 Rectifiers 1200V, 30A TO-247 LL
C2M0080120D

Mfr.#: C2M0080120D

OMO.#: OMO-C2M0080120D

 MOSFET ZFET 1X20A IDS 1200V ON 80MOHM SIC MOSFT
C4D20120D

Mfr.#: C4D20120D

OMO.#: OMO-C4D20120D

 Schottky Diodes & Rectifiers SIC SCHOTTKY DIODE 1200V, 2x10A
STM32F334C8T6

Mfr.#: STM32F334C8T6

OMO.#: OMO-STM32F334C8T6

 ARM Microcontrollers - MCU 16/32-BITS MICROS
APDS-9007-020

Mfr.#: APDS-9007-020

OMO.#: OMO-APDS-9007-020

 Ambient Light Sensors Ambient Light sensor
AH10928V10000JE

Mfr.#: AH10928V10000JE

OMO.#: OMO-AH10928V10000JE

 Heat Sinks Alum Extrusion 10" For HS300 Series
394-1AB

Mfr.#: 394-1AB

OMO.#: OMO-394-1AB

 Heat Sinks Performance, Low Profile Heatsink for Power Modules & IGBTs, 76.2x38.1x127mm, 4 Mounting Holes
IXDN609SIA

Mfr.#: IXDN609SIA

OMO.#: OMO-IXDN609SIA-IXYS-INTEGRATED-CIRCUITS-DIVIS

 Gate Drivers 9-Ampere Low-Side Ultrafast MOSFET
MGJ2D051509SC

Mfr.#: MGJ2D051509SC

OMO.#: OMO-MGJ2D051509SC-MURATA-POWER-SOLUTIONS

 Isolated DC/DC Converters 2W 5Vin 15/-8.7Vout 80/40mA SIP
Verfügbarkeit
Aktie:
27
Auf Bestellung:
2010
Menge eingeben:
Der aktuelle Preis von IXYH20N120C3D1 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
Referenzpreis (USD)
Menge
Stückpreis
ext. Preis
1
10,84 $
10,84 $
10
9,76 $
97,60 $
25
8,89 $
222,25 $
50
8,12 $
406,00 $
100
8,02 $
802,00 $
250
7,31 $
1 827,50 $
500
6,72 $
3 360,00 $
1000
5,86 $
5 860,00 $
Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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