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| Teil # | Mfg. | Beschreibung | Aktie | Preis |
|---|---|---|---|---|
| IPI086N10N3GXKSA1 DISTI # IPI086N10N3GXKSA1-ND | Infineon Technologies AG | MOSFET N-CH 100V 80A TO262-3 RoHS: Compliant Min Qty: 1 Container: Tube | 609In Stock |
|
| IPI086N10N3GXK DISTI # IPI086N10N3GXKSA1 | Infineon Technologies AG | Trans MOSFET N-CH 100V 80A 3-Pin(3+Tab) TO-262 - Rail/Tube (Alt: IPI086N10N3GXKSA1) RoHS: Compliant Min Qty: 1000 Container: Tube | Americas - 1000 |
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| IPI086N10N3G DISTI # SP000683070 | Infineon Technologies AG | Trans MOSFET N-CH 100V 80A 3-Pin TO-262 Tube (Alt: SP000683070) RoHS: Compliant Min Qty: 1 Container: Tube | Europe - 0 |
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| IPI086N10N3GXKSA1 DISTI # 34AC1700 | Infineon Technologies AG | MOSFET, N-CH, 100V, 80A, TO-262,Transistor Polarity:N Channel,Continuous Drain Current Id:80A,Drain Source Voltage Vds:100V,On Resistance Rds(on):0.0074ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:2.7V,Power RoHS Compliant: Yes | 361 |
|
| IPI086N10N3G | Infineon Technologies AG | Power Field-Effect Transistor, 80A I(D), 100V, 0.0086ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA RoHS: Compliant | 15500 |
|
| IPI086N10N3GXKSA1 | Infineon Technologies AG | Power Field-Effect Transistor, 80A I(D), 100V, 0.0086ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA RoHS: Compliant | 800 |
|
| IPI086N10N3 G DISTI # 726-IPI086N10N3G | Infineon Technologies AG | MOSFET N-Ch 100V 80A I2PAK-3 OptiMOS 3 RoHS: Compliant | 398 |
|
| IPI086N10N3G | Infineon Technologies AG | 2000 | ||
| IPI086N10N3GXKSA1 DISTI # 8922166 | Infineon Technologies AG | MOSFET N-CHANNEL 100V 80A OPTIMOS TO262, PK | 340 |
|
| IPI086N10N3GXKSA1 DISTI # IPI086N10N3GXKSA1 | Infineon Technologies AG | Transistor: N-MOSFET,unipolar,100V,80A,125W,PG-TO262-3 | 206 |
|
| IPI086N10N3GXKSA1 DISTI # 2781092 | Infineon Technologies AG | MOSFET, N-CH, 100V, 80A, TO-262 RoHS: Compliant | 361 |
|
| IPI086N10N3GXKSA1 DISTI # 2781092 | Infineon Technologies AG | MOSFET, N-CH, 100V, 80A, TO-262 RoHS: Compliant | 361 |
|
| Bild | Teil # | Beschreibung |
|---|---|---|
|
Mfr.#: IPI086N10N3 G OMO.#: OMO-IPI086N10N3-G |
MOSFET N-Ch 100V 80A I2PAK-3 OptiMOS 3 |
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Mfr.#: IPI086N10N3GXKSA1 OMO.#: OMO-IPI086N10N3GXKSA1 |
MOSFET MV POWER MOS |
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Mfr.#: IPI086N10N3GXK OMO.#: OMO-IPI086N10N3GXK-1190 |
Trans MOSFET N-CH 100V 80A 3-Pin(3+Tab) TO-262 - Rail/Tube (Alt: IPI086N10N3GXKSA1) |
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Mfr.#: IPI086N10N OMO.#: OMO-IPI086N10N-1190 |
Neu und Original |
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Mfr.#: IPI086N10N3 OMO.#: OMO-IPI086N10N3-1190 |
Neu und Original |
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Mfr.#: IPI086N10N3G OMO.#: OMO-IPI086N10N3G-1190 |
Trans MOSFET N-CH 100V 80A 3-Pin TO-262 Tube (Alt: IPI086N10N3 G) |
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Mfr.#: IPI086N10N3GXKSA1 |
MOSFET N-CH 100V 80A TO262-3 |
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Mfr.#: IPI086N10N3GXKSA1 , 2SD2 |
Neu und Original |
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Mfr.#: IPI086N10NG OMO.#: OMO-IPI086N10NG-1190 |
Neu und Original |
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Mfr.#: IPI086N10N3 G OMO.#: OMO-IPI086N10N3-G-124 |
Darlington Transistors MOSFET N-Ch 100V 80A I2PAK-3 OptiMOS 3 |
