IXFB210N20P

IXFB210N20P
Mfr. #:
IXFB210N20P
Hersteller:
Littelfuse
Beschreibung:
MOSFET 210 Amps 200V 0.0105 Rds
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
IXFB210N20P Datenblatt
Die Zustellung:
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ECAD Model:
Mehr Informationen:
IXFB210N20P Mehr Informationen
Produkteigenschaft
Attributwert
Hersteller
IXYS
Produktkategorie
Transistoren - FETs, MOSFETs - Single
Serie
IXFB210N20
Verpackung
Rohr
Gewichtseinheit
0.056438 oz
Montageart
Durchgangsloch
Handelsname
HyperFET
Paket-Koffer
TO-247-3
Technologie
Si
Anzahl der Kanäle
1 Channel
Aufbau
Single
Transistor-Typ
1 N-Channel
Pd-Verlustleistung
1.5 kW
Maximale-Betriebstemperatur
+ 175 C
Mindest-Betriebstemperatur
- 55 C
Vgs-Gate-Source-Spannung
20 V
ID-Dauer-Drain-Strom
210 A
Vds-Drain-Source-Breakdown-Voltage
200 V
Rds-On-Drain-Source-Widerstand
10.5 mOhms
Transistor-Polarität
N-Kanal
Tags
IXFB, IXF
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***i-Key
MOSFET N-CH 200V 210A PLUS264
Electrical Vehicle DC Fast Chargers
DC charging stations are designed to convert the electrical grid’s AC power into DC power that can then be fed directly into a vehicle’s battery system for fast charging – in 30 minutes or less. Because the conversion from AC to DC power is being done in the charging station, these units can provide higher levels of power (50kW to 350kW and beyond) to the vehicle compared to AC charging stations. Working with tens to hundreds of kilowatts of power, efficient conversion, reliability of the system, and user safety are critical.
Teil # Mfg. Beschreibung Aktie Preis
IXFB210N20P
DISTI # IXFB210N20P-ND
IXYS CorporationMOSFET N-CH 200V 210A PLUS264
RoHS: Compliant
Min Qty: 25
Container: Tube
Temporarily Out of Stock
  • 25:$22.1220
IXFB210N20P
DISTI # 747-IXFB210N20P
IXYS CorporationMOSFET 210 Amps 200V 0.0105 Rds
RoHS: Compliant
7
  • 1:$23.6600
  • 5:$22.4800
  • 10:$21.8900
  • 25:$20.1100
  • 50:$19.2600
  • 100:$18.6900
  • 250:$17.1500
Bild Teil # Beschreibung
IXFB210N30P3

Mfr.#: IXFB210N30P3

OMO.#: OMO-IXFB210N30P3

MOSFET N-Channel: Power MOSFET w/Fast Diode
IXFB210N20P

Mfr.#: IXFB210N20P

OMO.#: OMO-IXFB210N20P

MOSFET 210 Amps 200V 0.0105 Rds
IXFB210N30P3

Mfr.#: IXFB210N30P3

OMO.#: OMO-IXFB210N30P3-IXYS-CORPORATION

IGBT Transistors MOSFET N-Channel: Power MOSFET w/Fast Diode
IXFB210N20P

Mfr.#: IXFB210N20P

OMO.#: OMO-IXFB210N20P-IXYS-CORPORATION

MOSFET 210 Amps 200V 0.0105 Rds
Verfügbarkeit
Aktie:
Available
Auf Bestellung:
5500
Menge eingeben:
Der aktuelle Preis von IXFB210N20P dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
Referenzpreis (USD)
Menge
Stückpreis
ext. Preis
1
25,72 $
25,72 $
10
24,44 $
244,39 $
100
23,15 $
2 315,25 $
500
21,87 $
10 933,15 $
1000
20,58 $
20 580,00 $
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