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IXTP8N50PM

IXTP8N50PM
Mfr. #:
IXTP8N50PM
Hersteller:
IXYS
Beschreibung:
MOSFET N-CH 500V 4A TO-220
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
IXTP8N50PM Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
IXTP8N50PM Datasheet
ECAD Model:
Produkteigenschaft
Attributwert
Tags
IXTP8N, IXTP8, IXTP, IXT
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***i-Key
MOSFET N-CH 500V 4A TO-220
***S
new, original packaged
***el Nordic
Contact for details
***nell
MOSFET, N, TO-220; Transistor Type:Standard; Transistor Polarity:N; Voltage, Vds Typ:500V; Current, Id Cont:8A; Resistance, Rds On:0.88ohm; Voltage, Vgs Rds on Measurement:10V; Voltage, Vgs th Typ:5.5V; Case Style:TO-220 (SOT-78B); Termination Type:Through Hole; N-channel Gate Charge:20nC; No. of Pins:3; Power, Pd:41W; Thermal Resistance, Junction to Case A:3°C/W; Typ Capacitance Ciss:1050pF; Voltage, Vds Max:500V; Time, trr Max:400ns
***icroelectronics
N-channel 500 V, 0.73 Ohm, 5 A MDmesh(TM) II Power MOSFET in TO-220
***ure Electronics
N-Channel 550 V 0.79 Ohm Flange Mount MDmesh II Power MosFet - TO-220
***ical
Trans MOSFET N-CH 500V 5A 3-Pin(3+Tab) TO-220AB Tube
***S.I.T. Europe - USA - Asia
Power Field-Effect Transistor, 5A I(D), 500V, 0.79ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
***ark
MOSFET, N CH, 500V, 5A, TO-220; Channel Type:N Channel; Drain Source Voltage Vds:500V; Continuous Drain Current Id:5A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:3V; Product Range:- RoHS Compliant: Yes
***icroelectronics
N-CHANNEL 500V 2.4 Ohm 3A TO-220 SUPERFREDMESH MOSFET
***va Crawler
N-channel 500 V, 2.4 Ohm typ., 3 A SuperMESH Power MOSFET in TO-220 package
***ical
Trans MOSFET N-CH 500V 3A 3-Pin(3+Tab) TO-220AB Tube
***enic
500V 3A 45W 2.7´Î@10V1.5A 4.5V@50Ã×A N Channel TO-220(TO-220-3) MOSFETs ROHS
***ca Corp
Power Field-Effect Transistor, 3A I(D), 500V, 2.7ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
***nell
MOSFET, N, TO-220; Transistor type:MOSFET; Voltage, Vds typ:500V; Current, Id cont:3A; Resistance, Rds on:2.7ohm; Voltage, Vgs Rds on measurement:10V; Voltage, Vgs th typ:3.5V; Case style:TO-220 (SOT-78B); Capacitance, Ciss typ:3100pF; Current, Iar:3A; Current, Idm pulse:12A; Energy, avalanche single pulse Eas:120mJ; Power, Pd:45W; Resistance, Rds on @ Vgs = 10V:2.7ohm; Termination Type:Through Hole; Transistor polarity:N; Voltage, Rds measurement:10V; Voltage, Vds:500V; Voltage, Vds max:500V; Voltage, Vgs max:30V; Voltage, Vgs th max:4.5V; Voltage, Vgs th min:2.5V
***icroelectronics
N-channel 500 V, 1.22 Ohm typ., 4.4 A Zener-protected SuperMESH Power MOSFET in TO-220 package
***ical
Trans MOSFET N-CH 500V 4.4A 3-Pin(3+Tab) TO-220AB Tube
***trelec
MOSFET Operating temperature: -55...150 °C Housing type: TO-220 Polarity: N Power dissipation: 70 W
***enic
500V 4.4A 1.5´Î@10V2.2A 70W 4.5V@50Ã×A N Channel TO-220(TO-220-3) MOSFETs ROHS
***S.I.T. Europe - USA - Asia
Power Field-Effect Transistor, 4.4A I(D), 500V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
***nell
MOSFET, N, TO-220; Transistor Polarity: N Channel; Continuous Drain Current Id: 4.4A; Drain Source Voltage Vds: 500V; On Resistance Rds(on): 1.22ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3.75V; Power Dissipati
***ure Electronics
Single N-Channel 560 V 950 mOhm 22 nC CoolMOS™ Power Mosfet - TO-220-3
***el Electronic
MOSFET Transistor, N Channel, 4.5 A, 500 V, 0.85 ohm, 10 V, 3 V
***et
Trans MOSFET N-CH 500V 4.5A 3-Pin(3+Tab) TO-220AB
***nell
MOSFET, N, COOLMOS, TO-220; Transistor Polarity: N Channel; Continuous Drain Current Id: 4.5A; Drain Source Voltage Vds: 500V; On Resistance Rds(on): 0.85ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3V; Power Dis
***S.I.T. Europe - USA - Asia
Power Field-Effect Transistor, 4.5A I(D), 500V, 0.95ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
***ark
MOSFET, N, COOLMOS, TO-220; Transistor Type:MOSFET; Transistor Polarity:N; Voltage, Vds Typ:560V; Current, Id Cont:4.5A; Resistance, Rds On:1.5ohm; Voltage, Vgs Rds on Measurement:10V; Voltage, Vgs th Typ:3V; Case Style:TO-220FP; ;RoHS Compliant: Yes
***ineon
Replacement for 500V CoolMOS C3 is 500V CoolMOS CE >> Click & go to 500V CoolMOS CE | Summary of Features: Low specific on-state resistance; (R on*A); Very low energy storage in output capacitance (E oss) @400V; Low gate charge (Q g); Fieldproven CoolMOS quality; CoolMOS technology has been manufactured by Infineon since 1998 | Benefits: High efficiency and power density; Outstanding cost/performance; High reliability; Ease-of-use | Target Applications: Server; Telecom; Consumer; PC power; Adapter
***emi
N-Channel Power MOSFET, UniFETTM II, 500 V, 4.5 A, 1.5 Ω, TO-220
***ure Electronics
N-Channel 500 V 1.5 O 9 nC Flange Mount PowerTrench® Mosfet - TO-220
***et Europe
Trans MOSFET N-CH 500V 4.5A 3-Pin(3+Tab) TO-220 Rail
***nell
MOSFET, N-CH, 500V, 4.5A, TO-220; Transistor Polarity: N Channel; Continuous Drain Current Id: 4.5A; Drain Source Voltage Vds: 500V; On Resistance Rds(on): 1.38ohm; Available until stocks are exhausted Alternative available
*** Stop Electro
Power Field-Effect Transistor, 4.5A I(D), 500V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
***rchild Semiconductor
UniFETTM II MOSFET is Fairchild Semiconductor’s high voltage MOSFET family based on advanced planar stripe and DMOS technology. This advanced MOSFET family has the smallest on-state resistance among the planar MOSFET, and also provides superior switching performance and higher avalanche energy strength. In addition, internal gate-source ESD diode allows UniFET II MOSFET to withstand over 2kV HBM surge stress. This device family is suitable for switching power converter applications such as power factor correction (PFC), flat panel display (FPD) TV power, ATX and electronic lamp ballasts.
***itex
Transistor: N-MOSFET; unipolar; 650V; 4.5A; 0.95ohm; 50W; -55+150 deg.C; THT; TO220
***ure Electronics
Single N-Channel 650 V 950 mOhm 19 nC CoolMOS™ Power Mosfet - TO-220-3
***p One Stop
Trans MOSFET N-CH 650V 4.5A 3-Pin(3+Tab) TO-220 Tube
***el Electronic
MOSFET Transistor, N Channel, 4.5 A, 650 V, 0.85 ohm, 10 V, 3 V
***ment14 APAC
MOSFET, N, COOLMOS, TO-220; Transistor Polarity:N Channel; Continuous Drain Current Id:4.5A; Source Voltage Vds:650V; On Resistance
***ark
MOSFET, N, COOLMOS, TO-220; Transistor Type:MOSFET; Transistor Polarity:N; Voltage, Vds Typ:650V; Current, Id Cont:4.5A; Resistance, Rds On:0.95ohm; Voltage, Vgs Rds on Measurement:10V; Voltage, Vgs th Typ:3V; Case Style:TO-220; ;RoHS Compliant: Yes
***ineon
Replacement for 600V CoolMOS C3 is 600V CoolMOS C6/E6 >> Click & go to 600V CoolMOS C6/E6 | Summary of Features: Low specific on-state resistance; (R on*A); Very low energy storage in output capacitance (E oss) @400V; Low gate charge (Q g); Fieldproven CoolMOS quality; CoolMOS technology has been manufactured by Infineon since 1998 | Benefits: High efficiency and power density; Outstanding cost/performance; High reliability; Ease-of-use | Target Applications: Server; Telecom; Consumer; PC power; Adapter
***nell
MOSFET, N, COOLMOS, TO-220; Transistor Polarity: N Channel; Continuous Drain Current Id: 4.5A; Drain Source Voltage Vds: 650V; On Resistance Rds(on): 0.85ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3V; Power Dissipation Pd: 50W; Transistor Case Style: TO-220; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: -; SVHC: No SVHC (27-Jun-2018); Current Id Max: 4.5A; Current Temperature: 25°C; Full Power Rating Temperature: 25°C; Junction Temperature Tj Max: 150°C; Junction Temperature Tj Min: -55°C; No. of Transistors: 1; Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to +150°C; Power Dissipation Ptot Max: 50W; Pulse Current Idm: 13.5A; SMD Marking: 04N60C3; Termination Type: Through Hole; Voltage Vds Typ: 650V; Voltage Vgs Max: 20V; Voltage Vgs Rds on Measurement: 10V; Voltage Vgs th Max: 3.9V
Teil # Mfg. Beschreibung Aktie Preis
IXTP8N50PM
DISTI # IXTP8N50PM-ND		IXYS CorporationMOSFET N-CH 500V 4A TO-220
RoHS: Compliant
Min Qty: 50
Container: Tube		Limited Supply - Call
    Bild Teil # Beschreibung
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    OMO.#: OMO-IXTP8N50PM-IXYS-CORPORATION

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    Verfügbarkeit
    Aktie:
    Available
    Auf Bestellung:
    5000
    Menge eingeben:
    Der aktuelle Preis von IXTP8N50PM dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
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    Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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