PartNumber | IXTP80N12T2 | IXTP80N10T | IXTP86N20T |
Description | Discrete Semiconductor Modules DiscMSFT NChTrenchGate-Gen2 TO-220AB/FP | MOSFET 80 Amps 100V 13.0 Rds | MOSFET 86 Amps 200V 29 Rds |
Manufacturer | IXYS | IXYS | IXYS |
Product Category | Discrete Semiconductor Modules | MOSFET | MOSFET |
RoHS | Y | Y | Y |
Product | Power MOSFET Modules | - | - |
Type | Trench T2 | - | Trench Gate Power MOSFET |
Vgs Gate Source Voltage | 20 V | 20 V | 30 V |
Mounting Style | Through Hole | Through Hole | Through Hole |
Package / Case | TO-220AB-3 | TO-220-3 | TO-220-3 |
Minimum Operating Temperature | - 55 C | - 55 C | - 55 C |
Maximum Operating Temperature | + 175 C | + 175 C | + 175 C |
Packaging | Tube | Tube | Tube |
Configuration | Single | Single | - |
Brand | IXYS | IXYS | IXYS |
Transistor Polarity | N-Channel | N-Channel | N-Channel |
Fall Time | 28 ns | 48 ns | 29 ns |
Id Continuous Drain Current | 80 A | 80 A | 86 A |
Pd Power Dissipation | 325 W | 230 W | 480 W |
Product Type | Discrete Semiconductor Modules | MOSFET | MOSFET |
Rds On Drain Source Resistance | 17 mOhms | 14 mOhms | 29 mOhms |
Rise Time | 14 ns | 54 ns | 24 ns |
Factory Pack Quantity | 50 | 50 | 50 |
Subcategory | Discrete Semiconductor Modules | MOSFETs | MOSFETs |
Tradename | TrenchT2 | HiPerFET | HiPerFET |
Typical Turn Off Delay Time | 39 ns | 40 ns | 52 ns |
Typical Turn On Delay Time | 21 ns | 31 ns | 22 ns |
Vds Drain Source Breakdown Voltage | 120 V | 100 V | 200 V |
Vgs th Gate Source Threshold Voltage | 2.5 V | - | 5 V |
Technology | - | Si | Si |
Number of Channels | - | 1 Channel | - |
Channel Mode | - | Enhancement | Enhancement |
Height | - | 9.15 mm | 16 mm |
Length | - | 10.66 mm | 10.66 mm |
Series | - | IXTP80N10 | IXTP86N20 |
Transistor Type | - | 1 N-Channel | - |
Width | - | 4.83 mm | 4.83 mm |
Unit Weight | - | 0.081130 oz | 0.081130 oz |
Qg Gate Charge | - | - | 90 nC |
Forward Transconductance Min | - | - | 46 S |