SEMIX653GD176HDC

SEMIX653GD176HDC
Mfr. #:
SEMIX653GD176HDC
Hersteller:
SEMIKRON
Beschreibung:
IGBT, 1700 V, 660 A @ 25 DegC, 650 A @ 80 DegC, 1.7 V @ 25 degC
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
SEMIX653GD176HDC Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Produkteigenschaft
Attributwert
Tags
SEMIX65, SEMIX6, SEMIX, SEMI, SEM
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ied Electronics & Automation
IGBT; IGBT; 1700 V, 660 A @ 25 DegC; 650 A @ 80 DegC; 1.7 V @ 25 degC
***ikron
Features: Homogeneous Si Trench = Trenchgate technology V CE(sat) with positive temperature coefficient UL recognised file no. E63532 Typical Applications: AC inverter drives UPS Electronic welders
***ark
Igbt Module, 1.7Kv, 620A, Semix 33C; Transistor Polarity:n Channel; Dc Collector Current:660A; Collector Emitter Saturation Voltage Vce(On):2.45V; Power Dissipation Pd:-; Collector Emitter Voltage V(Br)Ceo:1.7Kv; No. Of Pins:29Pins Rohs Compliant: Yes
***nell
IGBT MODULE, 1700V, 6 PACK; Transistor Type:IGBT; Transistor Polarity:N; Voltage, Vces:1700V; Current Ic Continuous a Max:650A; Voltage, Vce Sat Max:2.45V; Case Style:SEMiX 33c; Collector-to-Emitter Breakdown Voltage:1700V; Current Ic Continuous b Max:460A; Current Ic av:650A; Current, Icm Pulsed:650A; External Depth:150mm; Fixing Centres:50mm; Fixing Hole Diameter:5.5mm; SMD Marking:SEMiX 33c; Temperature, Current:25°C; Time, Rise:90ns; Transistors, No. of:6; Width, External:162mm; Voltage:1700V
Teil # Mfg. Beschreibung Aktie Preis
SEMIX 653GD176HDC
DISTI # 09J5173
SEMIKRONIGBT MODULE, 1.7KV, 620A, SEMIX 33C,Transistor Polarity:N Channel,DC Collector Current:660A,Collector Emitter Saturation Voltage Vce(on):2.45V,Power Dissipation Pd:-,Collector Emitter Voltage V(br)ceo:1.7kV,No. of Pins:29Pins RoHS Compliant: Yes0
  • 25:$586.3200
  • 10:$623.8400
  • 5:$633.2200
  • 1:$642.6000
SEMIX653GD176HDC
DISTI # 70098214
SEMIKRONIGBT,1700 V,660 A @ 25 DegC,650 A @ 80 DegC,1.7 V @ 25 degC
RoHS: Compliant
0
  • 1:$969.8400
  • 2:$940.7500
  • 5:$912.5200
  • 10:$866.9000
  • 25:$823.5500
Bild Teil # Beschreibung
SEMIX653GAL176HDS

Mfr.#: SEMIX653GAL176HDS

OMO.#: OMO-SEMIX653GAL176HDS-1190

IGBT MODULE, SINGLE, 1.7KV, 619A, Transistor Polarity:NPN, DC Collector Current:619A, Collector Emitter Saturation Voltage Vce(on):2V, Power Dissipation Pd:-, Collector Emitter Voltage V(br)ceo:1
SEMIX653GB176HDS

Mfr.#: SEMIX653GB176HDS

OMO.#: OMO-SEMIX653GB176HDS-1190

IGBT POWER MODULE, Transistor Polarity:N Channel, DC Collector Current:619A, Collector Emitter Saturation Voltage Vce(on):2.45V, Power Dissipation Pd:-, Collector Emitter Voltage V(br)ceo:1.2V,
SEMIX653GD176HDC

Mfr.#: SEMIX653GD176HDC

OMO.#: OMO-SEMIX653GD176HDC-1190

IGBT, 1700 V, 660 A @ 25 DegC, 650 A @ 80 DegC, 1.7 V @ 25 degC
Verfügbarkeit
Aktie:
Available
Auf Bestellung:
2500
Menge eingeben:
Der aktuelle Preis von SEMIX653GD176HDC dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
Referenzpreis (USD)
Menge
Stückpreis
ext. Preis
1
1,00 $
1,00 $
10
1,00 $
10,00 $
100
1,00 $
100,00 $
500
1,00 $
500,00 $
1000
988,26 $
988 260,00 $
Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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