STGW40H120DF2

STGW40H120DF2
Mfr. #:
STGW40H120DF2
Hersteller:
STMicroelectronics
Beschreibung:
IGBT Transistors Trench gate field-stop IGBT, H series 1200 V, 40 A high speed
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
STGW40H120DF2 Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Mehr Informationen:
STGW40H120DF2 Mehr Informationen STGW40H120DF2 Product Details
Produkteigenschaft
Attributwert
Hersteller:
STMicroelectronics
Produktkategorie:
IGBT-Transistoren
RoHS:
Y
Technologie:
Si
Paket / Koffer:
TO-247-3
Montageart:
Durchgangsloch
Aufbau:
Single
Kollektor- Emitterspannung VCEO Max:
1200 V
Kollektor-Emitter-Sättigungsspannung:
2.1 V
Maximale Gate-Emitter-Spannung:
20 V
Kontinuierlicher Kollektorstrom bei 25 C:
80 A
Pd - Verlustleistung:
468 W
Minimale Betriebstemperatur:
- 55 C
Maximale Betriebstemperatur:
+ 175 C
Serie:
STGW40H120DF2
Verpackung:
Rohr
Kontinuierlicher Kollektorstrom Ic Max:
40 A
Marke:
STMicroelectronics
Gate-Emitter-Leckstrom:
250 nA
Produktart:
IGBT-Transistoren
Werkspackungsmenge:
600
Unterkategorie:
IGBTs
Gewichtseinheit:
1.340411 oz
Tags
STGW40H1, STGW40H, STGW40, STGW4, STGW, STG
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ical
Trans IGBT Chip N-CH 1200V 80A 468000mW 3-Pin(3+Tab) TO-247 Tube
***ure Electronics
STGW40H120 Series 1200 V 40 A High Speed Trench Gate Field-Stop IGBT - TO-247
***p One Stop Global
Trans IGBT Chip N-CH 1.2KV 80A 3-Pin(3+Tab) TO-247 Tube
***et Europe
Trans IGBT Chip N-CH 1200V 80A 3-Pin TO-247 Tube
***ronik
IGBT 1200V 80A 2.1V TO247-3
***i-Key
IGBT 1200V 40A HS TO-247
***ark
IGBT, SINGLE, 1.2KV, 80A, TO-247; DC Collector Current:80A; Collector Emitter Saturation Voltage Vce(on):2.1V; Power Dissipation Pd:468W; Collector Emitter Voltage V(br)ceo:1.2kV; No. of Pins:3Pins; Operating Temperature Max:175�C RoHS Compliant: Yes
***ment14 APAC
Prices include import duty and tax. IGBT, SINGLE, 1.2KV, 80A, TO-247; DC Collector Current:80A; Collector Emitter Saturation Voltage Vce(on):2.1V; Power Dissipation Pd:468W; Collector Emitter Voltage V(br)ceo:1.2kV; Transistor Case Style:TO-247; No. of Pins:3Pins; Operating Temperature Max:175°C; Product Range:H Series; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (07-Jul-2017)
***nell
IGBT, SINGOLO, 1.2KV, 80A, TO-247; Corrente di Collettore CC:80A; Tensione Saturaz Collettore-Emettitore Vce(on):2.1V; Dissipazione di Potenza Pd:468W; Tensione Collettore-Emettitore V(br)ceo:1.2kV; Modello Case Transistor:TO-247; No. di Pin:3Pin; Temperatura di Esercizio Max:175°C; Gamma Prodotti:H Series; Standard di Qualifica Automotive:-; Livello di Sensibilità all'Umidità (MSL):MSL 1 - Non Limitata; Sostanze Estremamente Preoccupanti (SVHC):No SVHC (07-Jul-2017)
IGBT H Series
STMicroelectronics 1200V H Series Trench Gate Field-Stop IGBTs represent an optimum compromise between conduction and switching losses to maximize the efficiency of any frequency converter. With ST's advanced Trench-Gate Field-Stop High-Speed technology, these IGBTs have a 5μs minimum short circuit withstand time at TJ=150°C, minimal collector current turn off tail, and very low saturation voltage (Vce(sat)) down to 2.1V (typical) to minimize energy losses during switching and when turned on. Furthermore, a slightly positive VCE(sat)temperature coefficient and very tight parameter distribution result in safer paralleling operation.
Teil # Mfg. Beschreibung Aktie Preis
STGW40H120DF2
DISTI # 32904011
STMicroelectronicsTrans IGBT Chip N-CH 1.2KV 80A 3-Pin(3+Tab) TO-247 Tube
RoHS: Compliant
570
  • 570:$5.6034
STGW40H120DF2
DISTI # 497-14715-5-ND
STMicroelectronicsIGBT 1200V 40A HS TO-247
RoHS: Compliant
Min Qty: 1
Container: Tube
513In Stock
  • 510:$6.6727
  • 120:$7.6629
  • 30:$8.8253
  • 10:$9.2560
  • 1:$10.2500
STGW40H120DF2
DISTI # V36:1790_06560761
STMicroelectronicsTrans IGBT Chip N-CH 1.2KV 80A 3-Pin(3+Tab) TO-247 Tube
RoHS: Compliant
0
    STGW40H120DF2
    DISTI # STGW40H120DF2
    STMicroelectronicsTrans IGBT Chip N-CH 1200V 80A 3-Pin TO-247 Tube (Alt: STGW40H120DF2)
    RoHS: Compliant
    Min Qty: 1
    Container: Tube
    Europe - 0
    • 1000:€4.3900
    • 500:€4.7900
    • 100:€4.8900
    • 50:€5.0900
    • 25:€5.2900
    • 10:€5.5900
    • 1:€6.0900
    STGW40H120DF2
    DISTI # STGW40H120DF2
    STMicroelectronicsTrans IGBT Chip N-CH 1200V 80A 3-Pin TO-247 Tube - Rail/Tube (Alt: STGW40H120DF2)
    RoHS: Compliant
    Min Qty: 600
    Container: Tube
    Americas - 0
    • 6000:$5.1900
    • 3600:$5.2900
    • 2400:$5.4900
    • 1200:$5.7900
    • 600:$6.0900
    STGW40H120DF2
    DISTI # 45AC7604
    STMicroelectronicsTrans IGBT Chip N-CH 1200V 80A 3-Pin TO-247 Tube - Bulk (Alt: 45AC7604)
    RoHS: Compliant
    Min Qty: 1
    Container: Bulk
    Americas - 0
    • 500:$7.1000
    • 250:$7.7000
    • 100:$8.0100
    • 50:$8.5600
    • 25:$9.0900
    • 10:$9.4900
    • 1:$10.4000
    STGW40H120DF2
    DISTI # 45AC7604
    STMicroelectronicsIGBT, SINGLE, 1.2KV, 80A, TO-247,DC Collector Current:80A,Collector Emitter Saturation Voltage Vce(on):2.1V,Power Dissipation Pd:468W,Collector Emitter Voltage V(br)ceo:1.2kV,No. of Pins:3Pins,Operating Temperature Max:175°C RoHS Compliant: Yes55
    • 250:$5.6600
    • 500:$5.6600
    • 10:$6.1300
    • 25:$6.1300
    • 50:$6.1300
    • 100:$6.1300
    • 1:$6.6900
    STGW40H120DF2
    DISTI # 511-STGW40H120DF2
    STMicroelectronicsIGBT Transistors Trench gate field-stop IGBT, H series 1200 V, 40 A high speed
    RoHS: Compliant
    582
    • 1:$9.7500
    • 10:$8.8100
    • 25:$8.4000
    • 100:$7.2900
    • 250:$6.9700
    • 500:$6.3500
    STGW40H120DF2
    DISTI # 2807176
    STMicroelectronicsIGBT, SINGLE, 1.2KV, 80A, TO-247
    RoHS: Compliant
    2378
    • 510:$10.1100
    • 120:$11.6100
    • 30:$13.3800
    • 1:$15.5300
    STGW40H120DF2
    DISTI # 2807176
    STMicroelectronicsIGBT, SINGLE, 1.2KV, 80A, TO-2472378
    • 100:£5.6800
    • 50:£6.1100
    • 10:£6.5400
    • 5:£7.5900
    • 1:£8.1700
    STGW40H120DF2
    DISTI # XSKDRABV0046907
    STMicroelectronicsArray/NetworkResistor,Isolated,MetalGlaze/thickFilm, 33ohm, 25V,1%+/-Tol,200ppm/Cel,SurfaceMount, 0408
    RoHS: Compliant
    290 in Stock0 on Order
    • 290:$8.5440
    • 90:$9.1560
    STGW40H120DF2
    DISTI # IGBT1410
    STMicroelectronicsIGBT 1200V80A2.1VTO247-3Stock DE - 236Stock HK - 0Stock US - 0
    • 30:$6.6900
    • 60:$6.2700
    • 90:$6.1700
    • 120:$6.0700
    • 180:$5.7100
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    Verfügbarkeit
    Aktie:
    556
    Auf Bestellung:
    2539
    Menge eingeben:
    Der aktuelle Preis von STGW40H120DF2 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
    Referenzpreis (USD)
    Menge
    Stückpreis
    ext. Preis
    1
    9,75 $
    9,75 $
    10
    8,81 $
    88,10 $
    25
    8,40 $
    210,00 $
    100
    7,29 $
    729,00 $
    250
    6,97 $
    1 742,50 $
    500
    6,35 $
    3 175,00 $
    Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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