OMO ElectronicOMO Electronic
Expand menu
Hallo, melde dich anMein Konto
0 Wagen

STGW25M120DF3

STGW25M120DF3
Mfr. #:
STGW25M120DF3
Hersteller:
STMicroelectronics
Beschreibung:
IGBT Transistors Trench gate field-stop IGBT, M series 1200 V, 25 A low loss
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
STGW25M120DF3 Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Mehr Informationen:
STGW25M120DF3 Mehr Informationen STGW25M120DF3 Product Details
Produkteigenschaft
Attributwert
Hersteller:
STMicroelectronics
Produktkategorie:
IGBT-Transistoren
RoHS:
Y
Technologie:
Si
Paket / Koffer:
TO-247-3
Montageart:
Durchgangsloch
Aufbau:
Single
Kollektor- Emitterspannung VCEO Max:
1200 V
Kollektor-Emitter-Sättigungsspannung:
1.85 V
Maximale Gate-Emitter-Spannung:
20 V
Kontinuierlicher Kollektorstrom bei 25 C:
50 A
Pd - Verlustleistung:
326 W
Minimale Betriebstemperatur:
- 55 C
Maximale Betriebstemperatur:
+ 175 C
Serie:
STGW25M120DF3
Verpackung:
Rohr
Marke:
STMicroelectronics
Gate-Emitter-Leckstrom:
250 nA
Produktart:
IGBT-Transistoren
Werkspackungsmenge:
600
Unterkategorie:
IGBTs
Gewichtseinheit:
1.340411 oz
Tags
STGW25, STGW2, STGW, STG
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***icroelectronics
Trench gate field-stop IGBT, M series 1200 V, 25 A low loss
***ical
Trans IGBT Chip N-CH 1200V 50A 375000mW 3-Pin(3+Tab) TO-247 Tube
***nell
IGBT, SINGLE, 1.2KV, 50A, TO-247-3; DC Collector Current: 50A; Collector Emitter Saturation Voltage Vce(on): 1.85V; Power Dissipation Pd: 375W; Collector Emitter Voltage V(br)ceo: 1.2kV; Transistor Case Style: TO-247; No. of
***icroelectronics
Trench gate field-stop IGBT, M series 1200 V, 25 A low loss
***ical
Trans IGBT Chip N-CH 1200V 50A 375000mW 3-Pin(3+Tab) TO-247 Tube
***nell
IGBT, SINGLE, 1.2KV, 50A, TO-247-3; DC Collector Current: 50A; Collector Emitter Saturation Voltage Vce(on): 1.85V; Power Dissipation Pd: 375W; Collector Emitter Voltage V(br)ceo: 1.2kV; Transistor Case Style: TO-247; No. of
***ernational Rectifier
1200V UltraFast Discrete IGBT in a TO-247 package with UltraFast Soft Recovery Diode
***ical
Trans IGBT Chip N-CH 1200V 50A 180000mW 3-Pin(3+Tab) TO-247AC Tube
***ment14 APAC
TRANSISTOR, BIPOLAR, N CHANNEL, 1.2KV, TO-247AD; DC Collector Current:50A; Collector Emitter Saturation Voltage Vce(on):1.9V; Power Dissipation Pd:180W; Collector Emitter Voltage V(br)ceo:1.2kV; No. of Pins:3Pins; Product Range:-
***ical
Trans IGBT Chip N-CH 1200V 50A 375000mW 3-Pin(3+Tab) TO-247 Tube
***icroelectronics
Trench gate field-stop IGBT, H series 1200 V, 25 A high speed
***r Electronics
Insulated Gate Bipolar Transistor, 50A I(C), 1200V V(BR)CES, N-Channel, TO-247
***el Electronic
IGBT Transistors IGBT & Power Bipolar
***i-Key
IGBT H-SERIES 1200V 25A TO-247
***DA Technology Co., Ltd.
Product Description Demo for Development.
***ernational Rectifier
1200V UltraFast Discrete IGBT in a TO-247 package with Ultra-Low Vf Diode
***et
Trans IGBT Chip N-CH 1.2KV 50A 3-Pin(3+Tab) TO-247AC
***SIT Distribution GmbH
Insulated Gate Bipolar Transistor, 50A I(C), 1200V V(BR)CES, N-Channel, TO-247AC
***(Formerly Allied Electronics)
1200V TRENCH IGBT FOR INDUCTION COOKING50A COPAK-247
*** Electronic Components
IGBT Transistors 1200V Trench IGBT Inductn Cooking 50A
***Yang
, IGBT, N, , 1200V, 50A, TO-247AC
***nell
IGBT,N CH,DIODE,1200V,50A,TO-247AC; Transistor Type:IGBT; DC Collector Current:50A; Collector Emitter Voltage Vces:1.9V; Power Dissipation Pd:179W; Collector Emitter Voltage V(br)ceo:1.2kV; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:TO-247AC; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Power Dissipation Max:179W
***icroelectronics
Trench gate field-stop IGBT, H series 1200 V, 25 A high speed
***ical
Trans IGBT Chip N-CH 1200V 50A 375000mW 3-Pin(3+Tab) TO-247 Tube
***ure Electronics
STGWA25H120: 1200 V 50 A 375 W Trench Gate Field-Stop IGBT - TO-247-3
***r Electronics
Insulated Gate Bipolar Transistor, 50A I(C), 1200V V(BR)CES, N-Channel, TO-247
***icroelectronics SCT
Trench gate field-stop IGBT, TO-247 long leads, Tube
***DA Technology Co., Ltd.
Product Description Demo for Development.
***ical
Trans IGBT Chip N-CH 1200V 50A 428000mW 3-Pin(3+Tab) TO-247 Tube
***r Electronics
Insulated Gate Bipolar Transistor, 50A I(C), 1200V V(BR)CES, N-Channel, TO-247AB
***emi
IGBT, 1200V, 25A Field Stop Trench
***ark
RAIL/1200V 25A FS2 Trench IGBT
*** Stop Electro
Insulated Gate Bipolar Transistors
***rchild Semiconductor
Using innovative field stop trench IGBT technology, Fairchild’s new series of field stop trench IGBTs offer the optimum performance for hard switching application such as solar inverter, UPS, welder and PFC applications.
STMicroelectronics M Series Trench Gate Field-Stop IGBTs
STMicroelectronics M Series Trench Gate Field-Stop IGBTs are developed using an advanced proprietary trench gate field-stop structure. They represent an optimum compromise in performance to maximize the efficiency of inverter systems where low-loss and short circuit capability are essential. Furthermore, a positive VCE(sat) temperature coefficient and tight parameter distribution result in safer paralleling operation. Typical applications for these devices include industrial drives, UPS, solar, and welding.Learn More
Teil # Mfg. Beschreibung Aktie Preis
STGW25M120DF3
DISTI # 497-15058-5-ND		STMicroelectronicsIGBT 1200V 50A 375W
RoHS: Compliant
Min Qty: 600
Container: Tube		Temporarily Out of Stock
  • 600:$6.5430
STGW25M120DF3
DISTI # STGW25M120DF3		STMicroelectronicsTrans IGBT Chip N-CH 1200V 50A 3-Pin TO-247 Tube - Rail/Tube (Alt: STGW25M120DF3)
RoHS: Compliant
Min Qty: 600
Container: Tube		Americas - 0
  • 600:$5.2900
  • 1200:$5.0900
  • 2400:$4.8900
  • 3600:$4.5900
  • 6000:$4.4900
STGW25M120DF3
DISTI # STGW25M120DF3		STMicroelectronicsTrans IGBT Chip N-CH 1200V 50A 3-Pin TO-247 Tube (Alt: STGW25M120DF3)
RoHS: Compliant
Min Qty: 1
Container: Tube		Europe - 0
  • 30:€3.7100
STGW25M120DF3
DISTI # 511-STGW25M120DF3		STMicroelectronicsIGBT Transistors Trench gate field-stop IGBT, M series 1200 V, 25 A low loss
RoHS: Compliant		0
  • 1:$8.5700
  • 10:$7.7500
  • 25:$7.3900
  • 100:$6.4100
  • 250:$6.1300
  • 500:$5.5800
STGW25M120DF3
DISTI # IGBT1559		STMicroelectronicsIGBT 1200V 25A 1,85VTO247-3
RoHS: Compliant		Stock DE - 0Stock US - 0
  • 600:$4.8700
STGW25M120DF3STMicroelectronics 
RoHS: Compliant		Europe - 600
    STGW25M120DF3
    DISTI # STGW25M120DF3    		STMicroelectronics1200V 50A 375W TO247
    RoHS: Not Compliant    		50
    • 5:€4.9600
    • 30:€4.3600
    • 120:€4.0600
    • 300:€3.9100
    STGW25M120DF3
    DISTI # 2470026    		STMicroelectronicsIGBT, SINGLE, 1.2KV, 50A, TO-247-3
    RoHS: Compliant    		0
    • 1:£7.0300
    • 5:£6.4800
    • 10:£5.5900
    • 50:£5.2200
    • 100:£4.8500
    STGW25M120DF3
    DISTI # C1S730200974138    		STMicroelectronicsTrans IGBT Chip N-CH 1.2KV 50A 3-Pin(3+Tab) TO-247 Tube
    RoHS: Compliant    		600
    • 600:$4.3100
    • 300:$4.6800
    • 100:$5.1400
    • 50:$5.9200
    • 10:$5.9800
    • 1:$8.2500
    Bild Teil # Beschreibung
    FGH40T120SQDNL4

    Mfr.#: FGH40T120SQDNL4

    OMO.#: OMO-FGH40T120SQDNL4

    		 IGBT Transistors IGBT 1200V 40A UFS
    NGTB40N120FL3WG

    Mfr.#: NGTB40N120FL3WG

    OMO.#: OMO-NGTB40N120FL3WG

    		 IGBT Transistors IGBT 1200V 40A FS3 SOLAR/
    NGTB40N120S3WG

    Mfr.#: NGTB40N120S3WG

    OMO.#: OMO-NGTB40N120S3WG

    		 IGBT Transistors IGBT 1200V 40A FS3 LOW VF
    STGW40H120DF2

    Mfr.#: STGW40H120DF2

    OMO.#: OMO-STGW40H120DF2

    		 IGBT Transistors Trench gate field-stop IGBT, H series 1200 V, 40 A high speed
    FGA25N120ANTDTU

    Mfr.#: FGA25N120ANTDTU

    OMO.#: OMO-FGA25N120ANTDTU

    		 IGBT Transistors Copak Discrete
    FGH25T120SMD-F155

    Mfr.#: FGH25T120SMD-F155

    OMO.#: OMO-FGH25T120SMD-F155

    		 IGBT Transistors 1200V, 25A Field Stop Trench IGBT
    NGTB40N120FL2WG

    Mfr.#: NGTB40N120FL2WG

    OMO.#: OMO-NGTB40N120FL2WG

    		 IGBT Transistors 1200V/40A FAST IGBT FSII
    MC14584BDTR2G

    Mfr.#: MC14584BDTR2G

    OMO.#: OMO-MC14584BDTR2G

    		 Inverters 3-18V CMOS Hex Schmitt Trigger
    STGW40H120DF2

    Mfr.#: STGW40H120DF2

    OMO.#: OMO-STGW40H120DF2-STMICROELECTRONICS

    		 IGBT 1200V 40A HS TO-247
    FGA25N120ANTDTU

    Mfr.#: FGA25N120ANTDTU

    OMO.#: OMO-FGA25N120ANTDTU-ON-SEMICONDUCTOR

    		 IGBT 1200V 50A 312W TO3P
    Verfügbarkeit
    Aktie:
    578
    Auf Bestellung:
    2561
    Menge eingeben:
    Der aktuelle Preis von STGW25M120DF3 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
    Referenzpreis (USD)
    Menge
    Stückpreis
    ext. Preis
    1
    8,56 $
    8,56 $
    10
    7,74 $
    77,40 $
    25
    7,38 $
    184,50 $
    100
    6,40 $
    640,00 $
    250
    6,12 $
    1 530,00 $
    500
    5,58 $
    2 790,00 $
    1000
    4,86 $
    4 860,00 $
    2500
    4,68 $
    11 700,00 $
    Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
    Beginnen mit
    Neueste Produkte
    • LD56050 Ultra-Low Dropout Linear Regulator
      LD56050 Ultra-Low Dropout Linear Regulator
      STMicro's LD56050 linear regulator includes thermal protection, maximum space-saving package, and is suitable for low power, battery-operated applications.
    • Automotive-Grade Rectifiers
      Automotive-Grade Rectifiers
      STMicroelectronics offers a large number of rectifiers that meet AEC-Q101 standards as well as strict international automotive quality requirements.
    • Compare STGW25M120DF3
      Compare STGW25M120DF3
      STGW25H120DF vs STGW25H120DF2 vs STGW25H120F
    • Electronic Fuses
      Electronic Fuses
      STMicroelectronics' E-Fuses are a hot-swap power management IC that can reduce maintenance costs and improve equipment uptime and availability.
    • Easy-to-Use Teseo-LIV3F GNSS Module
      Easy-to-Use Teseo-LIV3F GNSS Module
      STMicro's Teseo-LIV3F module is an easy-to-use global navigation satellite system (GNSS) standalone module.
    • SPC58 Automotive General Purpose MCU with Networki
      SPC58 Automotive General Purpose MCU with Networki
      STMicroelectronics' SPC58 automotive microcontrollers offer a unique scalability ideal for long-term platform development strategy of automotive customers.
    More Newest Products
    Top