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| Teil # | Mfg. | Beschreibung | Aktie | Preis |
|---|---|---|---|---|
| FMI49N20T2 DISTI # FE0000000000989 | Fuji Electric Co Ltd | Power Field-Effect Transistor, 49A I(D),200V,0.047ohm, 1-Element, N-Channel,Silicon,Metal-oxide Semiconductor FET RoHS: Compliant | 0 in Stock0 on Order |
| Bild | Teil # | Beschreibung |
|---|---|---|
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Mfr.#: FMI07N50E OMO.#: OMO-FMI07N50E-1190 |
Power Field-Effect Transistor, 6.5A I(D),500V,0.85ohm, 1-Element, N-Channel, Silicon,Metal-oxideSemiconductor FET |
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Mfr.#: FMI11N60E OMO.#: OMO-FMI11N60E-1190 |
Power Field-Effect Transistor, 11A I(D),600V,0.75ohm, 1-Element, N-Channel, Silicon,Metal-oxideSemiconductor FET |
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Mfr.#: FMI12N50E OMO.#: OMO-FMI12N50E-1190 |
Power Field-Effect Transistor, 12A I(D),500V,0.52ohm, 1-Element, N-Channel, Silicon,Metal-oxideSemiconductor FET |
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Mfr.#: FMI13N60E OMO.#: OMO-FMI13N60E-1190 |
Power Field-Effect Transistor, 13A I(D),600V,0.58ohm, 1-Element, N-Channel, Silicon,Metal-oxideSemiconductor FET |
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Mfr.#: FMI20N50E OMO.#: OMO-FMI20N50E-1190 |
Power Field-Effect Transistor, 20A I(D),500V,0.31ohm, 1-Element, N-Channel, Silicon,Metal-oxideSemiconductor FET |
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Mfr.#: FMI27851 OMO.#: OMO-FMI27851-1190 |
Neu und Original |
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Mfr.#: FMI45D OMO.#: OMO-FMI45D-1190 |
Neu und Original |
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Mfr.#: FMIG100J7CSB1W OMO.#: OMO-FMIG100J7CSB1W-1190 |
Neu und Original |
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Mfr.#: FMIPSS-125-101M OMO.#: OMO-FMIPSS-125-101M-1190 |
Neu und Original |
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Mfr.#: FMIS-19581/82 OMO.#: OMO-FMIS-19581-82-1190 |
Neu und Original |