MJE18008G

Mfr. #:: MJE18008G
Hersteller:: ON Semiconductor
Beschreibung:: Bipolar Transistors - BJT 8A 450V 125W NPN
Lebenszyklus:: Neu von diesem Hersteller.
Datenblatt:: MJE18008G Datenblatt
Die Zustellung:: DHL FedEx Ups TNT EMS
Zahlung:: T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:: MJE18008G Datasheet MJE18008G Datasheet (P4-P6)MJE18008G Datasheet (P7-P9)MJE18008G Datasheet (P10)
ECAD Model:

Produkteigenschaft
Attributwert

Hersteller:: ON Semiconductor

Produktkategorie:: Bipolartransistoren - BJT

RoHS:: Y

Montageart:: Durchgangsloch

Paket / Koffer:: TO-220-3

Polarität des Transistors:: NPN

Aufbau:: Single

Kollektor- Emitterspannung VCEO Max:: 450 V

Kollektor- Basisspannung VCBO:: 1 kV

Emitter- Basisspannung VEBO:: 9 V

Kollektor-Emitter-Sättigungsspannung:: 0.3 V

Maximaler DC-Kollektorstrom:: 8 A

Bandbreitenprodukt fT gewinnen:: 13 MHz

Minimale Betriebstemperatur:: - 65 C

Maximale Betriebstemperatur:: + 150 C

Serie:: MJE18008

Höhe:: 15.75 mm

Länge:: 10.53 mm

Verpackung:: Rohr

Breite:: 4.83 mm

Marke:: ON Semiconductor

Kontinuierlicher Kollektorstrom:: 8 A

DC-Kollektor/Basisverstärkung hfe Min:: 14

Pd - Verlustleistung:: 125 W

Produktart:: BJTs - Bipolartransistoren

Werkspackungsmenge:: 50

Unterkategorie:: Transistoren

Gewichtseinheit:: 0.211644 oz

Tags: MJE1800, MJE180, MJE18, MJE1, MJE

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

MJE18008G Beschreibung

***(Formerly Allied Electronics): ON Semi MJE18008G NPN High Voltage Bipolar Transistor; 8 A; 450V; 3-Pin TO-220AB

***emi: 8.0 A, 450 V NPN Bipolar Power Transistor

***Yang: Transistor GP BJT NPN 450V 8A 3-Pin TO-220AB Rail - Rail/Tube

***r Electronics: Power Bipolar Transistor, 8A I(C), 450V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin

***enic: 450V 125W 8A 14@1A5V 13MHz 300mV@2A200mA NPN -65¡Í~+150¡Í@(Tj) TO-220AB Bipolar Transistors - BJT ROHS

***ource: Bipolar Power TO220 NPN 8A 450V; Package: TO-220 3 LEAD STANDARD; No of Pins: 3; Container: Rail; Qty per Container: 50

***nell: TRANSISTOR, BIPOL, NPN, 450V, TO-220AB-3; Transistor Polarity: NPN; Collector Emitter Voltage V(br)ceo: 450V; Transition Frequency ft: 13MHz; Power Dissipation Pd: -; DC Collector Current: 8A; DC Current Gain hFE: 5hFE; Transi

***(Formerly Allied Electronics): ON Semi MJF18008G NPN High Voltage Bipolar Transistor; 8 A; 450 V; 3-Pin TO-220

***ure Electronics: Bipolar (BJT) Transistor NPN 450V 8A 13MHz 45W Through Hole TO-220FP

***emi: 8.0 A, 450 V NPN Bipolar Power Transistor

***Yang: Trans GP BJT NPN 450V 8A 3-Pin(3+Tab) TO-220 Full-Pak Rail - Rail/Tube

***r Electronics: Power Bipolar Transistor, 8A I(C), 450V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin

***enic: 450V 45W 8A [email protected] 13MHz NPN 300mV@2A200mA -65¡Í~+150¡Í@(Tj) TO-220 Bipolar Transistors - BJT ROHS

***nell: TRANSISTOR, NPN, 450V, 8A, TO-220; Transistor Polarity: NPN; Collector Emitter Voltage V(br)ceo: 450V; Transition Frequency ft: 13MHz; Power Dissipation Pd: 45W; DC Collector Current: 8A; DC Current Gain hFE: 5hFE; Transistor Case Style: TO-220; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: -; SVHC: Lead (27-Jun-2018)

***ark: BIPOLAR TRANSISTOR, NPN, 450V, TO-220; Transistor Polarity:NPN; Collector Emitter Voltage Max:450V; Continuous Collector Current:8A; Power Dissipation:45W; Transistor Mounting:Through Hole; No. of Pins:3Pins; Product Range:-; MSL:- RoHS Compliant: Yes

***th Star Micro: NPN Bipolar Power Transistor For Switching Power Supply Applications The MJE/MJF18008 have an applications specific state-of-the-art die designed for use in 220 V line-operated Switchmode Power supplies and electronic light ballasts. These high voltage/high speed transistors offer the following:

***(Formerly Allied Electronics): ON Semi MJE13007G NPN High Voltage Bipolar Transistor 8 A 400V 4-Pin TO-220AB

***ure Electronics: MJE13007 Series NPN 80 W 400 V 8 A Through Hole Switching Transistor - TO-220-3

***itex: Transistor: NPN; bipolar; 400V; 8A; 80W; -65+150 deg.C; THT; TO220

***ical: Trans GP BJT NPN 400V 8A 80000mW 3-Pin(3+Tab) TO-220AB Tube

***emi: 8.0 A, 400 V NPN Bipolar Power Transistor

***enic: 400V 80W 8A 5@5A5V 14MHz 3V@8A2A NPN -65¡Í~+150¡Í@(Tj) TO-220 Bipolar Transistors - BJT ROHS

***roFlash: Power Bipolar Transistor, 8A I(C), 400V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin

***trelec: Power Transistor, TO-220, NPN, 400V

***nell: TRANSISTOR, NPN, TO-220; Transistor Polarity: NPN; Collector Emitter Voltage V(br)ceo: 400V; Transition Frequency ft: 14MHz; Power Dissipation Pd: 80W; DC Collector Current: 8A; DC Current Gain hFE: 4hFE; Transistor Case Style

***th Star Micro: The MJE/MJF13007 is designed for high-voltage high-speed power switching inductive circuits where fall time is critical. It is particularly suited for 115 and 220 V switchmode applications such as Switching Regulators Inverters Motor Controls Solenoid/Relay drivers and Deflection circuits.

***et Europe: Trans GP BJT NPN 400V 8A 3-Pin(3+Tab) TO-220AB Rail

***ponent Stockers USA: 8 A 400 V NPN Si POWER TRANSISTOR TO-220AB

***i-Key: TRANS NPN 400V 8A TO220AB

***et Europe: Trans GP BJT NPN 400V 10A 3-Pin(3+Tab) TO-220AB Tube

***ponent Stockers USA: 10 A 400 V NPN Si POWER TRANSISTOR TO-220AB

*** Americas: Silicon diffused power transis

***ark: Transistor,bjt,npn,450V V(Br)Ceo,8A I(C),to-220Ab Rohs Compliant: Yes

***itex: Transistor: NPN; bipolar; 450V; 8A; 100W; -65+175 deg.C; THT; TO220

***Yang: Bipolar Transistors - BJT NPN Sil Transistor - Bulk

***S.I.T. Europe - USA - Asia: Power Bipolar Transistor, 8A I(C), 450V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin

Market price

Teil #	Mfg.	Beschreibung	Aktie	Preis
MJE18008G DISTI # V99:2348_07300618	ON Semiconductor	Trans GP BJT NPN 450V 8A 3-Pin(3+Tab) TO-220AB Tube RoHS: Compliant	881	500:$0.4909 100:$0.7546 50:$1.1168 1:$1.2848
MJE18008G DISTI # V36:1790_07300618	ON Semiconductor	Trans GP BJT NPN 450V 8A 3-Pin(3+Tab) TO-220AB Tube RoHS: Compliant	0
MJE18008G DISTI # MJE18008GOS-ND	ON Semiconductor	TRANS NPN 450V 8A TO220AB RoHS: Compliant Min Qty: 1 Container: Tube	2396In Stock	1000:$0.7364 500:$0.9222 100:$1.1080 50:$1.3402 1:$1.5700
MJE18008G DISTI # 27154539	ON Semiconductor	Trans GP BJT NPN 450V 8A 3-Pin(3+Tab) TO-220AB Tube RoHS: Compliant	881	500:$0.5277 100:$0.8112 50:$1.2006 12:$1.3812
MJE18008G DISTI # 11689118	ON Semiconductor	Trans GP BJT NPN 450V 8A 3-Pin(3+Tab) TO-220AB Tube RoHS: Compliant	500	500:$0.5114
MJE18008G DISTI # MJE18008G	ON Semiconductor	Trans GP BJT NPN 450V 8A 3-Pin(3+Tab) TO-220AB Rail (Alt: MJE18008G) RoHS: Compliant Min Qty: 50	Europe - 600	50:€0.7579 100:€0.6199 200:€0.5679 300:€0.5239 500:€0.4869
MJE18008G DISTI # MJE18008G	ON Semiconductor	Trans GP BJT NPN 450V 8A 3-Pin(3+Tab) TO-220AB Rail - Rail/Tube (Alt: MJE18008G) RoHS: Compliant Min Qty: 50 Container: Tube	Americas - 1084	50:$0.5178 52:$0.5145 102:$0.5079 250:$0.5014 500:$0.4891
MJE18008G DISTI # MJE18008G	ON Semiconductor	Trans GP BJT NPN 450V 8A 3-Pin(3+Tab) TO-220AB Rail - Bulk (Alt: MJE18008G) RoHS: Compliant Min Qty: 353 Container: Bulk	Americas - 0	353:$0.9279 355:$0.9219 708:$0.9099 1765:$0.8979 3530:$0.8759
MJE18008G DISTI # MJE18008G	ON Semiconductor	Trans GP BJT NPN 450V 8A 3-Pin(3+Tab) TO-220AB Rail (Alt: MJE18008G) RoHS: Compliant Min Qty: 800	Asia - 0	800:$0.7692 1600:$0.7396 2400:$0.7122 4000:$0.6868 8000:$0.6631 20000:$0.6410 40000:$0.6305
MJE18008G DISTI # 45J1499	ON Semiconductor	Trans GP BJT NPN 450V 8A 3-Pin(3+Tab) TO-220AB Rail - Bulk (Alt: 45J1499) RoHS: Compliant Min Qty: 1 Container: Bulk	Americas - 0	1:$1.6600 10:$1.4100 100:$1.1000 500:$0.9700 1000:$0.7750 2500:$0.6930 10000:$0.6690
MJE18008G DISTI # 45J1499	ON Semiconductor	BIPOLAR TRANSISTOR, NPN, 450V, TO-220,Transistor Polarity:NPN,Collector Emitter Voltage V(br)ceo:450V,Transition Frequency ft:13MHz,Power Dissipation Pd:125W,DC Collector Current:8A,DC Current Gain hFE:34hFE,No. of Pins:3Pins RoHS Compliant: Yes	841	10000:$0.6690 2500:$0.6930 1000:$0.7750 500:$0.9700 100:$1.1000 10:$1.4100 1:$1.6600
MJE18008G. DISTI # 81AC9154	ON Semiconductor	BIP T0220 NPN 10A 450V ROHS COMPLIANT: YES	0	10000:$0.6690 2500:$0.6930 1000:$0.7750 500:$0.9700 100:$1.1300 10:$1.4400 1:$1.7000
MJE18008G DISTI # 70340253	ON Semiconductor	ON Semi MJE18008G NPN High Voltage Bipolar Transistor,8 A,450V,3-Pin TO-220AB RoHS: Compliant	0	10:$1.5000 25:$1.4200 50:$1.3500 100:$1.2800
MJE18008G DISTI # 863-MJE18008G	ON Semiconductor	Bipolar Transistors - BJT 8A 450V 125W NPN RoHS: Compliant	7114	1:$1.4600 10:$1.2400 100:$0.9510 500:$0.8410 1000:$0.6640
MJE18008 DISTI # 863-MJE18008	ON Semiconductor	Bipolar Transistors - BJT 8A 450V 125W NPN RoHS: Not compliant	0
MJE18008G	ON Semiconductor	Power Bipolar Transistor, 8A I(C), 450V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin RoHS: Compliant	3200	1000:$0.9300 500:$0.9800 100:$1.0200 25:$1.0700 1:$1.1500
MJE18008G DISTI # 7905378	ON Semiconductor	NPN POWER TRANSISTOR 450V 8A 125W TO220, PK	829	10:£0.9180 5:£1.0800
MJE18008G DISTI # MJE18008	ON Semiconductor	Transistor: NPN,bipolar,450V,8A,125W,TO220AB	323	1:$1.2800 3:$1.1600 25:$0.9700 100:$0.8800 250:$0.7600
MJE18008G DISTI # 2535631	ON Semiconductor	TRANSISTOR, BIPOL, NPN, 450V, TO-220AB-3 RoHS: Compliant	320	100:$1.4300 10:$1.8700 1:$2.2000
MJE18008G. DISTI # 1263959	ON Semiconductor	BIPOLAR TRANSISTOR, NPN, 450V, TO-220 RoHS: Compliant	841	1000:$1.0000 500:$1.2700 100:$1.4300 10:$1.8700 1:$2.2000
MJE18008G DISTI # 2535631	ON Semiconductor	TRANSISTOR, BIPOL, NPN, 450V, TO-220AB-3 RoHS: Compliant	315	500:£0.6600 250:£0.7040 100:£0.7480 25:£0.9720 5:£1.0700

Verwandte Produkte

Bild	Teil #	Beschreibung
	Mfr.#: LM324N OMO.#: OMO-LM324N	Operational Amplifiers - Op Amps Quad
	Mfr.#: 2N3904 OMO.#: OMO-2N3904	Bipolar Transistors - BJT NPN Gen Pur SS
	Mfr.#: SQ2364EES-T1_GE3 OMO.#: OMO-SQ2364EES-T1-GE3	MOSFET 60V Vds; +/-8V Vgs SOT-23; 4A Id
	Mfr.#: STF28N65M2 OMO.#: OMO-STF28N65M2	MOSFET N-channel 650 V, 0.15 Ohm typ., 20 A MDmesh M2 Power MOSFET in TO-220FP package
	Mfr.#: SF-0402FP300F-2 OMO.#: OMO-SF-0402FP300F-2	Surface Mount Fuses 3A Fast-Acting 0402 SinglFuse
	Mfr.#: 271-5.76K-RC OMO.#: OMO-271-5-76K-RC-1088	Metal Film Resistors - Through Hole 5.76Kohms 1% 50PPM
	Mfr.#: STF28N65M2 OMO.#: OMO-STF28N65M2-STMICROELECTRONICS	MOSFET N-CH 650V 20A TO220FP
	Mfr.#: LM324N OMO.#: OMO-LM324N-TEXAS-INSTRUMENTS	Operational Amplifiers - Op Amps Quad Operational Amp
	Mfr.#: TPS2372-4RGWR OMO.#: OMO-TPS2372-4RGWR-TEXAS-INSTRUMENTS	TPS2372-4RGWR
	Mfr.#: 2N3904 OMO.#: OMO-2N3904-CENTRAL-SEMICONDUCTOR	Bipolar Transistors - BJT NPN Gen Pur SS

Verfügbarkeit

Aktie:: Available
Auf Bestellung:: 1990
Menge eingeben:

Der aktuelle Preis von MJE18008G dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]

Referenzpreis (USD)

Menge
Stückpreis
ext. Preis

1: ~~1,46 $~~; ~~1,46 $~~

10: ~~1,24 $~~; ~~12,40 $~~

100: ~~0,95 $~~; ~~95,10 $~~

500: ~~0,84 $~~; ~~420,50 $~~

1000: ~~0,66 $~~; ~~664,00 $~~

Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.

Beginnen mit

MJE1800 14
MJE180 19
MJE18 38
MJE1 320
MJE 579

MJE18008G

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes